Ajay Kumar Kambham
Ajay Kumar Kambham
Verified email at globalfoundries.com
Title
Cited by
Cited by
Year
Atom-probe for FinFET dopant characterization
AK Kambham, J Mody, M Gilbert, S Koelling, W Vandervorst
Ultramicroscopy 111 (6), 535-539, 2011
562011
Atom probe analysis of a 3D finFET with high-k metal gate
M Gilbert, W Vandervorst, S Koelling, AK Kambham
Ultramicroscopy 111 (6), 530-534, 2011
432011
In-situ observation of non-hemispherical tip shape formation during laser-assisted atom probe tomography
S Koelling, N Innocenti, A Schulze, M Gilbert, AK Kambham, ...
Journal of Applied Physics 109 (10), 104909, 2011
402011
Three-dimensional doping and diffusion in nano scaled devices as studied by atom probe tomography
AK Kambham, A Kumar, A Florakis, W Vandervorst
Nanotechnology 24 (27), 275705, 2013
302013
Characteristics of cross-sectional atom probe analysis on semiconductor structures
S Koelling, N Innocenti, G Hellings, M Gilbert, AK Kambham, K De Meyer, ...
Ultramicroscopy 111 (6), 540-545, 2011
252011
Dopant/carrier profiling for 3D‐structures
W Vandervorst, A Schulze, AK Kambham, J Mody, M Gilbert, P Eyben
physica status solidi (c) 11 (1), 121-129, 2014
242014
Dopant and carrier profiling in FinFET-based devices with sub-nanometer resolution
J Mody, AK Kambham, G Zschätzsch, P Schatzer, T Chiarella, N Collaert, ...
2010 Symposium on VLSI Technology, 195-196, 2010
222010
3D-carrier profiling in FinFETs using scanning spreading resistance microscopy
J Mody, G Zschätzsch, S Kölling, A De Keersgieter, G Eneman, ...
2011 International Electron Devices Meeting, 6.1. 1-6.1. 4, 2011
172011
3D site specific sample preparation and analysis of 3D devices (FinFETs) by atom probe tomography
AK Kambham, A Kumar, M Gilbert, W Vandervorst
Ultramicroscopy 132, 65-69, 2013
132013
High performance n-MOS finFET by damage-free, conformal extension doping
G Zschätzsch, Y Sasaki, S Hayashi, M Togo, T Chiarella, AK Kambham, ...
2011 International Electron Devices Meeting, 35.6. 1-35.6. 4, 2011
92011
Dopant and carrier profiling for 3D-device architectures
J Mody, AK Kambham, G Zschätzsch, T Chiarella, N Collaert, L Witters, ...
11th International Workshop on Junction Technology (IWJT), 108-113, 2011
62011
Atomic insight into Ge1− xSnx using atom probe tomography
A Kumar, MP Komalan, H Lenka, AK Kambham, M Gilbert, F Gencarelli, ...
Ultramicroscopy 132, 171-178, 2013
42013
Atom probe tomography for 3D-dopant analysis in FinFET devices
AK Kambham, G Zschaetzsch, Y Sasaki, M Togo, N Horiguchi, J Mody, ...
2012 Symposium on VLSI Technology (VLSIT), 77-78, 2012
42012
Junction strategies for 1x nm technology node with finfet and high mobility channel
N Horiguchi, G Zschaetzsch, Y Sasaki, AK Kambham, B Douhard, M Togo, ...
2012 12th International Workshop on Junction Technology, 216-221, 2012
32012
Analysis of Dopant Diffusion and Defects in Fin structure using an Atomistic Kinetic Monte Carlo Approach
T Noda, AK Kambham, C Vrancken, A Thean, N Horiguchi, W Vandervorst
Electron Devices Meeting (IEDM), 2013 IEEE International, 5.7. 1-5.7. 4, 2013
22013
Study of Sn migration during relaxation of Ge1‐xSnx layers using atom probe tomography
A Kumar, F Gencarelli, AK Kambham, M Gilbert, B Vincent, W Vandervorst
physica status solidi (c) 9 (10‐11), 1924-1930, 2012
22012
3D site specific sample preparation and analysis of 3D devices (FinFETs) by atom probe tomography
W Vandervorst, AK Kambham, A Kumar, M Gilbert
Ultramicroscopy 132 (1), 69-69, 2013
12013
Atom-probe-tomographic studies on silicon-based semiconductor devices
K Inoue, AK Kambham, D Mangelinck, D Lawrence, DJ Larson
Microscopy Today 20 (5), 38-44, 2012
12012
Application of Atom Probe on Fully Depleted Silicon-On-Insulator (FDSOI) Structures
AK Kambham, D Flatoff, B Fu
Microscopy and Microanalysis 22 (S3), 696-697, 2016
2016
Atomic Scale characterization of nano scale structures (FinFETs) using Atom Probe Tomography
AK Kambham
2014
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