| Unveiling the double-well energy landscape in a ferroelectric layer M Hoffmann, FPG Fengler, M Herzig, T Mittmann, B Max, U Schroeder, ... Nature 565 (7740), 464-467, 2019 | 384 | 2019 |
| Hafnia-based double-layer ferroelectric tunnel junctions as artificial synapses for neuromorphic computing B Max, M Hoffmann, H Mulaosmanovic, S Slesazeck, T Mikolajick ACS Applied Electronic Materials 2 (12), 4023-4033, 2020 | 125 | 2020 |
| Demonstration of High-speed Hysteresis-free Negative Capacitance in Ferroelectric Hf0.5Zr0.5O2 M Hoffmann, B Max, T Mittmann, U Schroeder, S Slesazeck, T Mikolajick 2018 IEEE International Electron Devices Meeting (IEDM), 31.6. 1-31.6. 4, 2018 | 119 | 2018 |
| Direct correlation of ferroelectric properties and memory characteristics in ferroelectric tunnel junctions B Max, M Hoffmann, S Slesazeck, T Mikolajick IEEE Journal of the Electron Devices Society 7, 1175-1181, 2019 | 107 | 2019 |
| Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf0.5Zr0.5.O2/ A12O3Capacitor Stacks B Max, M Hoffmann, S Slesazeck, T Mikolajick 2018 48th European Solid-State Device Research Conference (ESSDERC), 142-145, 2018 | 68 | 2018 |
| Negative capacitance for electrostatic supercapacitors M Hoffmann, FPG Fengler, B Max, U Schroeder, S Slesazeck, T Mikolajick Advanced Energy Materials 9 (40), 1901154, 2019 | 66 | 2019 |
| Built-in bias generation in anti-ferroelectric stacks: Methods and device applications M Pešić, T Li, V Di Lecce, M Hoffmann, M Materano, C Richter, B Max, ... IEEE Journal of the Electron Devices Society 6, 1019-1025, 2018 | 62 | 2018 |
| Phosphor‐converted white light from blue‐emitting InGaN microrod LEDs T Schimpke, M Mandl, I Stoll, B Pohl‐Klein, D Bichler, F Zwaschka, ... physica status solidi (a) 213 (6), 1577-1584, 2016 | 58 | 2016 |
| Ferroelectric-based synapses and neurons for neuromorphic computing E Covi, H Mulaosmanovic, B Max, S Slesazeck, T Mikolajick Neuromorphic Computing and Engineering 2 (1), 012002, 2022 | 56 | 2022 |
| Interplay between ferroelectric and resistive switching in doped crystalline HfO2 B Max, M Pešić, S Slesazeck, T Mikolajick Journal of Applied Physics 123 (13), 2018 | 51 | 2018 |
| Retention Characteristics of Hf0.5Zr0.5O2-Based Ferroelectric Tunnel Junctions B Max, T Mikolajick, M Hoffmann, S Slesazeck 2019 IEEE 11th International Memory Workshop (IMW), 1-4, 2019 | 49 | 2019 |
| Ferroelectric Hf1-xZrxO2 memories: device reliability and depolarization fields PD Lomenzo, S Slesazeck, M Hoffmann, T Mikolajick, U Schroeder, ... 2019 19th Non-Volatile Memory Technology Symposium (NVMTS), 1-8, 2019 | 42 | 2019 |
| Next generation ferroelectric memories enabled by hafnium oxide T Mikolajick, U Schroeder, PD Lomenzo, ET Breyer, H Mulaosmanovic, ... 2019 IEEE International Electron Devices Meeting (IEDM), 15.5. 1-15.5. 4, 2019 | 36 | 2019 |
| Uniting The Trinity of Ferroelectric HfO2 Memory Devices in a Single Memory Cell S Slesazeck, V Havel, E Breyer, H Mulaosmanovic, M Hoffmann, B Max, ... 2019 IEEE 11th International Memory Workshop (IMW), 1-4, 2019 | 27 | 2019 |
| Built‐in bias fields for retention stabilisation in hafnia‐based ferroelectric tunnel junctions B Max, M Hoffmann, S Slesazeck, T Mikolajick Electronics Letters 56 (21), 1108-1110, 2020 | 14 | 2020 |
| Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories H Mulaosmanovic, PD Lomenzo, U Schroeder, S Slesazeck, T Mikolajick, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2021 | 11 | 2021 |
| 19th Non-Volatile Memory Technology Symposium (NVMTS) PD Lomenzo, S Slesazeck, M Hoffmann, T Mikolajick, U Schroeder, ... Durham, NC, USA, 1-8, 2019 | 11 | 2019 |
| In 2018 48th European Solid-State Device Research Conference (ESSDERC) B Max, M Hoffmann, S Slesazeck, T Mikolajick IEEE, 2018 | 10 | 2018 |
| Physical and circuit modeling of HfO2 based ferroelectric memories and devices M Pešić, V Di Lecce, M Hoffmann, H Mulaosmanovic, B Max, U Schröder, ... 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2017 | 5 | 2017 |
| IEEE Int. Electron Devices Meeting (IEDM) M Hoffmann, B Max, T Mittmann, U Schroeder, S Slesazeck, T Mikolajick IEEE, San Francisco, CA, USA, 2018 | 3 | 2018 |
Thomas MikolajickScientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU DresdenBestätigte E-Mail-Adresse bei namlab.com
