Folgen
Benjamin Max
Benjamin Max
TU Dresden, Institute for Semiconductor and Microsystems, Chair of Nanoelectronics
Bestätigte E-Mail-Adresse bei tu-dresden.de
Titel
Zitiert von
Zitiert von
Jahr
Unveiling the double-well energy landscape in a ferroelectric layer
M Hoffmann, FPG Fengler, M Herzig, T Mittmann, B Max, U Schroeder, ...
Nature 565 (7740), 464-467, 2019
3562019
Demonstration of High-speed Hysteresis-free Negative Capacitance in Ferroelectric Hf0.5Zr0.5O2
M Hoffmann, B Max, T Mittmann, U Schroeder, S Slesazeck, T Mikolajick
2018 IEEE International Electron Devices Meeting (IEDM), 31.6. 1-31.6. 4, 2018
1122018
Hafnia-based double-layer ferroelectric tunnel junctions as artificial synapses for neuromorphic computing
B Max, M Hoffmann, H Mulaosmanovic, S Slesazeck, T Mikolajick
ACS Applied Electronic Materials 2 (12), 4023-4033, 2020
1052020
Direct correlation of ferroelectric properties and memory characteristics in ferroelectric tunnel junctions
B Max, M Hoffmann, S Slesazeck, T Mikolajick
IEEE Journal of the Electron Devices Society 7, 1175-1181, 2019
992019
Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf0.5Zr0.5.O2/ A12O3Capacitor Stacks
B Max, M Hoffmann, S Slesazeck, T Mikolajick
2018 48th European Solid-State Device Research Conference (ESSDERC), 142-145, 2018
632018
Negative capacitance for electrostatic supercapacitors
M Hoffmann, FPG Fengler, B Max, U Schroeder, S Slesazeck, T Mikolajick
Advanced Energy Materials 9 (40), 1901154, 2019
592019
Built-in bias generation in anti-ferroelectric stacks: Methods and device applications
M Pešić, T Li, V Di Lecce, M Hoffmann, M Materano, C Richter, B Max, ...
IEEE Journal of the Electron Devices Society 6, 1019-1025, 2018
592018
Phosphor‐converted white light from blue‐emitting InGaN microrod LEDs
T Schimpke, M Mandl, I Stoll, B Pohl‐Klein, D Bichler, F Zwaschka, ...
physica status solidi (a) 213 (6), 1577-1584, 2016
562016
Interplay between ferroelectric and resistive switching in doped crystalline HfO2
B Max, M Pešić, S Slesazeck, T Mikolajick
Journal of Applied Physics 123 (13), 2018
482018
Retention Characteristics of Hf0.5Zr0.5O2-Based Ferroelectric Tunnel Junctions
B Max, T Mikolajick, M Hoffmann, S Slesazeck
2019 IEEE 11th International Memory Workshop (IMW), 1-4, 2019
452019
Ferroelectric-based synapses and neurons for neuromorphic computing
E Covi, H Mulaosmanovic, B Max, S Slesazeck, T Mikolajick
Neuromorphic Computing and Engineering 2 (1), 012002, 2022
372022
Ferroelectric Hf1-xZrxO2 memories: device reliability and depolarization fields
PD Lomenzo, S Slesazeck, M Hoffmann, T Mikolajick, U Schroeder, ...
2019 19th Non-Volatile Memory Technology Symposium (NVMTS), 1-8, 2019
352019
Next generation ferroelectric memories enabled by hafnium oxide
T Mikolajick, U Schroeder, PD Lomenzo, ET Breyer, H Mulaosmanovic, ...
2019 IEEE International Electron Devices Meeting (IEDM), 15.5. 1-15.5. 4, 2019
322019
Uniting The Trinity of Ferroelectric HfO2 Memory Devices in a Single Memory Cell
S Slesazeck, V Havel, E Breyer, H Mulaosmanovic, M Hoffmann, B Max, ...
2019 IEEE 11th International Memory Workshop (IMW), 1-4, 2019
272019
Built‐in bias fields for retention stabilisation in hafnia‐based ferroelectric tunnel junctions
B Max, M Hoffmann, S Slesazeck, T Mikolajick
Electronics Letters 56 (21), 1108-1110, 2020
122020
Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories
H Mulaosmanovic, PD Lomenzo, U Schroeder, S Slesazeck, T Mikolajick, ...
2021 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2021
102021
19th Non-Volatile Memory Technology Symposium (NVMTS)
PD Lomenzo, S Slesazeck, M Hoffmann, T Mikolajick, U Schroeder, ...
Durham, NC, USA, 1-8, 2019
102019
In 2018 48th European Solid-State Device Research Conference (ESSDERC)
B Max, M Hoffmann, S Slesazeck, T Mikolajick
IEEE, 2018
92018
Physical and circuit modeling of HfO2 based ferroelectric memories and devices
M Pešić, V Di Lecce, M Hoffmann, H Mulaosmanovic, B Max, U Schröder, ...
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2017
52017
IEEE Int. Electron Devices Meeting (IEDM)
M Hoffmann, B Max, T Mittmann, U Schroeder, S Slesazeck, T Mikolajick
IEEE, San Francisco, CA, USA, 2018
32018
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20