| Origin of luminescence from InGaN diodes KP O'donnell, RW Martin, PG Middleton Physical Review Letters 82 (1), 237, 1999 | 643 | 1999 |
| The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 377 | 2020 |
| Exciton localization and the Stokes’ shift in InGaN epilayers RW Martin, PG Middleton, KP O’donnell, W Van der Stricht Applied physics letters 74 (2), 263-265, 1999 | 377 | 1999 |
| Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes HW Choi, CW Jeon, MD Dawson, PR Edwards, RW Martin, S Tripathy Journal of Applied Physics 93 (10), 5978-5982, 2003 | 187 | 2003 |
| Anomalous ion channeling in AlInN/GaN bilayers: determination of the strain state K Lorenz, N Franco, E Alves, IM Watson, RW Martin, KP O’donnell Physical review letters 97 (8), 085501, 2006 | 183 | 2006 |
| An organic down-converting material for white-light emission from hybrid LEDs NJ Findlay, J Bruckbauer, AR Inigo, B Breig, S Arumugam, DJ Wallis, ... Advanced Materials (Deerfield Beach, Fla.) 26 (43), 7290, 2014 | 131 | 2014 |
| Optical properties of high quality Cu2ZnSnSe4 thin films F Luckert, DI Hamilton, MV Yakushev, NS Beattie, G Zoppi, M Moynihan, ... Applied Physics Letters 99 (6), 2011 | 123 | 2011 |
| Raman-scattering study of the InGaN alloy over the whole composition range S Hernández, R Cuscó, D Pastor, L Artús, KP O’Donnell, RW Martin, ... Journal of Applied Physics 98 (1), 2005 | 120 | 2005 |
| High extraction efficiency InGaN micro-ring light-emitting diodes HW Choi, MD Dawson, PR Edwards, RW Martin Applied physics letters 83 (22), 4483-4485, 2003 | 120 | 2003 |
| Structural analysis of InGaN epilayers KP O'Donnell, JFW Mosselmans, RW Martin, S Pereira, ME White Journal of Physics: Condensed Matter 13 (32), 6977, 2001 | 118 | 2001 |
| Identification of the prime optical center in GaN: Eu 3+ IS Roqan, KP O'Donnell, RW Martin, PR Edwards, SF Song, A Vantomme, ... Physical Review B 81 (8), 085209, 2010 | 117 | 2010 |
| Selectively excited photoluminescence from Eu-implanted GaN K Wang, RW Martin, KP O’Donnell, V Katchkanov, E Nogales, K Lorenz, ... Applied Physics Letters 87 (11), 2005 | 112 | 2005 |
| Two-dimensional spin confinement in strained-layer quantum wells PJW RW Martin, RJ Nicholas, GJ Rees, SK Haywood, NJ Mason Phys. Rev. B 42, 9237, 1990 | 108 | 1990 |
| Cathodoluminescence nano-characterization of semiconductors PR Edwards, RW Martin Semiconductor Science and Technology 26 (6), 064005, 2011 | 107 | 2011 |
| Optical energies of AlInN epilayers K Wang, RW Martin, D Amabile, PR Edwards, S Hernandez, E Nogales, ... Journal of Applied Physics 103 (7), 2008 | 92 | 2008 |
| High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures J Bruckbauer, PR Edwards, T Wang, RW Martin Applied Physics Letters 98 (14), 2011 | 91 | 2011 |
| High-temperature annealing and optical activation of Eu-implanted GaN K Lorenz, U Wahl, E Alves, S Dalmasso, RW Martin, KP O'Donnell, ... Applied Physics Letters 85 (14), 2712-2714, 2004 | 88 | 2004 |
| Highly mismatched crystalline and amorphous GaN1− xAsx alloys in the whole composition range KM Yu, SV Novikov, R Broesler, IN Demchenko, JD Denlinger, ... Journal of Applied Physics 106 (10), 2009 | 86 | 2009 |
| Composition-dependent band gap and band-edge bowing in AlInN: A combined theoretical and experimental study S Schulz, MA Caro, LT Tan, PJ Parbrook, RW Martin, EP O'Reilly Applied Physics Express 6 (12), 121001, 2013 | 79 | 2013 |
| Charge carrier localised in zero-dimensional (CH3NH3)3Bi2I9 clusters C Ni, G Hedley, J Payne, V Svrcek, C McDonald, LK Jagadamma, ... Nature communications 8 (1), 170, 2017 | 75 | 2017 |
