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Ashish Verma Penumatcha
Ashish Verma Penumatcha
Components Research, Intel Corp.
Verified email at intel.com - Homepage
Title
Cited by
Cited by
Year
High Performance Multilayer MoS2 Transistors with Scandium Contacts
S Das, HY Chen, AV Penumatcha, J Appenzeller
Nano letters 13 (1), 100-105, 2013
26522013
Transistors based on two-dimensional materials for future integrated circuits
S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ...
Nature Electronics 4 (11), 786-799, 2021
3812021
Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
AV Penumatcha, RB Salazar, J Appenzeller
Nature communications 6 (1), 8948, 2015
1802015
Strain engineering for transition metal dichalcogenides based field effect transistors
T Shen, AV Penumatcha, J Appenzeller
ACS nano 10 (4), 4712-4718, 2016
1392016
Spin transfer torque in a graphene lateral spin valve assisted by an external magnetic field
CC Lin, AV Penumatcha, Y Gao, VQ Diep, J Appenzeller, Z Chen
Nano letters 13 (11), 5177-5181, 2013
682013
The Origins and Characteristics of the Threshold Voltage Variability of Quasi-Ballistic Single-Walled Carbon Nanotube Field-Effect Transistors
Q Cao, SJ Han, AV Penumatcha, MM Frank, GS Tulevski, J Tersoff, ...
ACS nano, 2015
622015
Limitations of the High-Low C-V Technique for MOS Interfaces With Large Time Constant Dispersion
AV Penumatcha, S Swandono, JA Cooper
IEEE transactions on electron devices 60 (3), 923-926, 2013
582013
Advancing 2D monolayer CMOS through contact, channel and interface engineering
KP O'Brien, CJ Dorow, A Penumatcha, K Maxey, S Lee, CH Naylor, ...
2021 IEEE International Electron Devices Meeting (IEDM), 7.1. 1-7.1. 4, 2021
552021
3d-ferroelectric random access memory (3d-fram)
S Shivaraman, SC Chang, AV Penumatcha, N Haratipour, UE Avci
US Patent App. 16/599,422, 2021
532021
Advancing Monolayer 2-D nMOS and pMOS transistor integration from growth to van der Waals interface engineering for ultimate CMOS scaling
C Dorow, K O’Brien, CH Naylor, S Lee, A Penumatcha, A Hsiao, T Tronic, ...
IEEE Transactions on Electron Devices 68 (12), 6592-6598, 2021
372021
Improvement of spin transfer torque in asymmetric graphene devices
CC Lin, Y Gao, AV Penumatcha, VQ Diep, J Appenzeller, Z Chen
ACS nano 8 (4), 3807-3812, 2014
342014
Scaling of device variability and subthreshold swing in ballistic carbon nanotube transistors
Q Cao, J Tersoff, SJ Han, AV Penumatcha
Physical Review Applied 4 (2), 024022, 2015
242015
Gate length scaling beyond Si: mono-layer 2D channel FETs robust to short channel effects
CJ Dorow, A Penumatcha, A Kitamura, C Rogan, KP O’Brien, S Lee, ...
2022 International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2022
102022
Spin-orbit torque based magnetization switching in Pt/Cu/[Co/Ni] 5 multilayer structures
V Ostwal, A Penumatcha, YM Hung, AD Kent, J Appenzeller
Journal of Applied Physics 122 (21), 2017
102017
300 mm MOCVD 2D CMOS materials for more (than) Moore scaling
K Maxey, CH Naylor, KP O'Brien, A Penumatcha, A Oni, C Mokhtarzadeh, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
92022
Spin-torque switching of a nano-magnet using giant spin hall effect
AV Penumatcha, SR Das, Z Chen, J Appenzeller
AIP Advances 5 (10), 2015
82015
Impact of scaling on the dipolar coupling in magnet–insulator–magnet structures
AV Penumatcha, CC Lin, VQ Diep, S Datta, J Appenzeller, Z Chen
IEEE Transactions on Magnetics 52 (1), 1-7, 2015
72015
Relaxor ferroelectric capacitors and methods of fabrication
SC Chang, CC Lin, N Haratipour, T Gosavi, IC Tung, SH Sung, I Young, ...
US Patent 11,316,027, 2022
62022
Capacitors with ferroelectric/antiferroelectric and dielectric materials
SC Chang, CC Lin, AV Penumatcha, UE Avci, IA Young
US Patent App. 16/296,035, 2020
62020
Ferroelectric resonator
T Gosavi, CC Lin, R Kim, AV Penumatcha, U Avci, I Young
US Patent 11,605,624, 2023
52023
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