| Dielectric, elastic, piezoelectric, electro-optic, and elasto-optic tensors of crystals M Zgonik, P Bernasconi, M Duelli, R Schlesser, P Günter, MH Garrett, ... Physical review B 50 (9), 5941, 1994 | 630 | 1994 |
| Materials constants of KNbO3 relevant for electro‐ and acousto‐optics M Zgonik, R Schlesser, I Biaggio, E Voit, J Tscherry, P Günter Journal of applied physics 74 (2), 1287-1297, 1993 | 373 | 1993 |
| Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ... Journal of The Electrochemical Society 158 (5), H530, 2011 | 170 | 2011 |
| Seeded growth of AlN bulk single crystals by sublimation R Schlesser, R Dalmau, Z Sitar Journal of crystal growth 241 (4), 416-420, 2002 | 163 | 2002 |
| Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy T Kinoshita, K Hironaka, T Obata, T Nagashima, R Dalmau, R Schlesser, ... Applied Physics Express 5 (12), 122101, 2012 | 151 | 2012 |
| Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport Y Kumagai, Y Kubota, T Nagashima, T Kinoshita, R Dalmau, R Schlesser, ... Applied Physics Express 5 (5), 055504, 2012 | 149 | 2012 |
| Growth of AlN single crystalline boules ZG Herro, D Zhuang, R Schlesser, Z Sitar Journal of Crystal Growth 312 (18), 2519-2521, 2010 | 136 | 2010 |
| Electro-optic effects in molecular crystals C Bosshard, K Sutter, R Schlesser, P Günter JOSA B 10 (5), 867-885, 1993 | 136 | 1993 |
| Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures J Xie, S Mita, Z Bryan, W Guo, L Hussey, B Moody, R Schlesser, R Kirste, ... Applied Physics Letters 102 (17), 2013 | 134 | 2013 |
| The growth and optical properties of large, high-quality AlN single crystals M Strassburg, J Senawiratne, N Dietz, U Haboeck, A Hoffmann, V Noveski, ... Journal of applied physics 96 (10), 5870-5876, 2004 | 131 | 2004 |
| Growth of Ga-and N-polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers R Collazo, S Mita, A Aleksov, R Schlesser, Z Sitar Journal of crystal growth 287 (2), 586-590, 2006 | 113 | 2006 |
| Band-edge exciton states in AlN single crystals and epitaxial layers L Chen, BJ Skromme, RF Dalmau, R Schlesser, Z Sitar, C Chen, W Sun, ... Applied physics letters 85 (19), 4334-4336, 2004 | 107 | 2004 |
| Seeded growth of AlN on N-and Al-polar< 0001> AlN seeds by physical vapor transport ZG Herro, D Zhuang, R Schlesser, R Collazo, Z Sitar Journal of crystal growth 286 (2), 205-208, 2006 | 96 | 2006 |
| Optical and Nonlinear Optical Properties of 4'-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) crystals G Knopfle Nonlinear Opt. 9, 143-149, 1995 | 96 | 1995 |
| Growth of bulk AlN crystals by vaporization of aluminum in a nitrogen atmosphere R Schlesser, Z Sitar Journal of crystal growth 234 (2-3), 349-353, 2002 | 95 | 2002 |
| Optically pumped UV lasers grown on bulk AlN substrates T Wunderer, CL Chua, JE Northrup, Z Yang, NM Johnson, M Kneissl, ... physica status solidi c 9 (3‐4), 822-825, 2012 | 94 | 2012 |
| Seeded growth of AlN single crystals by physical vapor transport D Zhuang, ZG Herro, R Schlesser, Z Sitar Journal of crystal growth 287 (2), 372-375, 2006 | 93 | 2006 |
| High-temperature electromechanical characterization of AlN single crystals T Kim, J Kim, R Dalmau, R Schlesser, E Preble, X Jiang IEEE transactions on Ultrasonics, Ferroelectrics, and Frequency control 62 …, 2015 | 83 | 2015 |
| Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy BL Ward, OH Nam, JD Hartman, SL English, BL McCarson, R Schlesser, ... Journal of applied physics 84 (9), 5238-5242, 1998 | 83 | 1998 |
| Mass transfer in AlN crystal growth at high temperatures V Noveski, R Schlesser, S Mahajan, S Beaudoin, Z Sitar Journal of crystal growth 264 (1-3), 369-378, 2004 | 81 | 2004 |
