| Valley dependent anisotropic spin splitting in silicon quantum dots R Ferdous, E Kawakami, P Scarlino, MP Nowak, DR Ward, DE Savage, ... npj Quantum Information 4 (1), 1-8, 2018 | 71 | 2018 |
| Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability R Ferdous, KW Chan, M Veldhorst, JCC Hwang, CH Yang, ... Physical Review B 97 (24), 241401, 2018 | 66 | 2018 |
| A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3 Gb/mm2 Bit Density A Khakifirooz, E Anaya, S Balasubrahmanyam, G Bennett, D Castro, ... IEEE Solid-State Circuits Letters, 2023 | 9 | 2023 |
| Valley dependent anisotropic spin splitting in silicon quantum dots. npj Quantum Inf. 4 R Ferdous | 8 | 2018 |
| Effects of doping of intermediate band region on intermediate band solar cell characteristics U Sikder, RU Ferdous, A Haque 2012 7th International Conference on Electrical and Computer Engineering …, 2012 | 4 | 2012 |
| Characterization of interface trap density of In-rich InGaAs nMOSFETs with ALD Al2O3 as gate dielectric S Sharmin, U Sikder, R Ferdous 2010 IEEE Nanotechnology Materials and Devices Conference, 2010 | 4 | 2010 |
| Apparatus and method to improve read window budget in a three dimensional nand memory R Ferdous, S Kang, G Karbasian, A Khakifirooz, RS Shenoy US Patent App. 18/206,864, 2023 | | 2023 |
| Staggered read recovery for improved read window budget in a three dimensional (3d) nand memory array R Ferdous, S Kang, RS Shenoy, A Khakifirooz, D Basu US Patent App. 17/322,724, 2022 | | 2022 |
| Variable error correction codeword packing to support bit error rate targets R Motwani, P Kalavade, R Shenoy, R Ferdous US Patent App. 17/109,376, 2021 | | 2021 |
| Spin-orbit interaction and electron spin qubits in silicon quantum dots R Ferdous Purdue University, 2018 | | 2018 |
| Valley dependent g-factor anisotropy in Silicon quantum dots R Ferdous, E Kawakami, P Scarlino, M Nowak, G Klimeck, M Friesen, ... APS March Meeting Abstracts 2016, L45. 007, 2016 | | 2016 |
| Interface roughness mediated phonon relaxation rates in Si quantum dots. R Ferdous, Y Hsueh, G Klimeck, R Rahman APS March Meeting Abstracts 2015, S37. 007, 2015 | | 2015 |
| Atomistic analysis of valley-orbit hybrid states and inter-dot tunnel rates in a Si double quantum dot R Ferdous, R Rahman, G Klimeck APS March Meeting Abstracts 2014, L36. 006, 2014 | | 2014 |
Rajib RahmanAssociate Professor of Physics, University of New South WalesVerified email at unsw.edu.au
