Michael Lübben
Michael Lübben
Bestätigte E-Mail-Adresse bei rwth-aachen.de
Titel
Zitiert von
Zitiert von
Jahr
Nanoscale cation motion in TaO x, HfO x and TiO x memristive systems
A Wedig, M Luebben, DY Cho, M Moors, K Skaja, V Rana, T Hasegawa, ...
Nature nanotechnology 11 (1), 67-74, 2016
4302016
Graphene‐Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices
M Lübben, P Karakolis, V Ioannou‐Sougleridis, P Normand, P Dimitrakis, ...
Advanced materials 27 (40), 6202-6207, 2015
1282015
Interfacial metal–oxide interactions in resistive switching memories
DY Cho, M Luebben, S Wiefels, KS Lee, I Valov
ACS applied materials & interfaces 9 (22), 19287-19295, 2017
742017
Processes and Effects of Oxygen and Moisture in Resistively Switching TaOx and HfOx
M Lübben, S Wiefels, R Waser, I Valov
Advanced electronic materials 4 (1), 1700458, 2018
692018
Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities
G Milano, M Luebben, Z Ma, R Dunin-Borkowski, L Boarino, CF Pirri, ...
Nature communications 9 (1), 1-10, 2018
672018
SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO2/Ag based systems
M Lübben, S Menzel, SG Park, M Yang, R Waser, I Valov
Nanotechnology 28 (13), 135205, 2017
482017
Oxygen exchange processes between oxide memristive devices and water molecules
T Heisig, C Baeumer, UN Gries, MP Mueller, C La Torre, M Luebben, ...
Advanced materials 30 (29), 1800957, 2018
382018
Direct probing of the dielectric scavenging-layer interface in oxide filamentary-based valence change memory
U Celano, J Op de Beeck, S Clima, M Luebben, PM Koenraad, L Goux, ...
ACS applied materials & interfaces 9 (12), 10820-10824, 2017
382017
Design of defect-chemical properties and device performance in memristive systems
M Lübben, F Cüppers, J Mohr, M von Witzleben, U Breuer, R Waser, ...
Science advances 6 (19), eaaz9079, 2020
222020
Active electrode redox reactions and device behavior in ECM type resistive switching memories
M Lübben, I Valov
Advanced Electronic Materials 5 (9), 1800933, 2019
222019
Mobile ions, transport and redox processes in memristive devices
I Valov, M Luebben, A Wedig, R Waser
ECS Transactions 75 (5), 27, 2016
122016
Ionic Modulation of Electrical Conductivity of ZnO Due to Ambient Moisture
G Milano, M Luebben, M Laurenti, S Porro, K Bejtka, S Bianco, U Breuer, ...
Advanced Materials Interfaces 6 (17), 1900803, 2019
92019
Water-mediated ionic migration in memristive nanowires with a tunable resistive switching mechanism
G Milano, F Raffone, M Luebben, L Boarino, G Cicero, I Valov, C Ricciardi
ACS applied materials & interfaces 12 (43), 48773-48780, 2020
42020
Influence of graphene interlayers on electrode-electrolyte interfaces in resistive random accesses memory cells
M Lübben, P Karakolis, A Wedig, V Ioannou, P Normand, P Dimitrakis, ...
MRS Online Proceedings Library (OPL) 1729, 29-34, 2015
32015
Theory and experimental verification of configurable computing with stochastic memristors
R Naous, A Siemon, M Schulten, H Alahmadi, A Kindsmüller, M Lübben, ...
Scientific reports 11 (1), 1-11, 2021
12021
ECS TRANSACTIONS
I Valov, A Wedig, R Waser, M Luebben, DR Islamov, VA Gritsenko, ...
12016
Structure‐Dependent Influence of Moisture on Resistive Switching Behavior of ZnO Thin Films
G Milano, M Luebben, M Laurenti, L Boarino, C Ricciardi, I Valov
Advanced Materials Interfaces 8 (16), 2100915, 2021
2021
Redox Processes at Interfaces and Ionic Motion in Resistively Switching Materials
M Lübben
Dr. Hut, 2020
2020
Metal organic chemical vapor deposition of GexSbyTez layers grown by using degermane
S Riess, D Schloesser, M Luebben, T Stoica, M Ahe, K Sladek, A Haab, ...
Verhandlungen der Deutschen Physikalischen Gesellschaft, 2013
2013
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