| Large Spin-Orbit Splitting of Deep In-Gap Defect States of Engineered Sulfur Vacancies in Monolayer B Schuler, DY Qiu, S Refaely-Abramson, C Kastl, CT Chen, S Barja, ... Physical review letters 123 (7), 076801, 2019 | 169 | 2019 |
| Surface states and Rashba-type spin polarization in antiferromagnetic (0001) RC Vidal, H Bentmann, TRF Peixoto, A Zeugner, S Moser, CH Min, ... Physical Review B 100 (12), 121104, 2019 | 156 | 2019 |
| Formation of high-quality quasi-free-standing bilayer graphene on SiC (0 0 0 1) by oxygen intercalation upon annealing in air MH Oliveira Jr, T Schumann, F Fromm, R Koch, M Ostler, M Ramsteiner, ... Carbon 52, 83-89, 2013 | 149 | 2013 |
| Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy N Briggs, B Bersch, Y Wang, J Jiang, RJ Koch, N Nayir, K Wang, ... Nature materials 19 (6), 637-643, 2020 | 140 | 2020 |
| Growth and electronic structure of boron-doped graphene J Gebhardt, RJ Koch, W Zhao, O Höfert, K Gotterbarm, S Mammadov, ... Physical Review B 87 (15), 155437, 2013 | 137 | 2013 |
| Visualization of the flat electronic band in twisted bilayer graphene near the magic angle twist MIB Utama, RJ Koch, K Lee, N Leconte, H Li, S Zhao, L Jiang, J Zhu, ... Nature Physics 17 (2), 184-188, 2021 | 136 | 2021 |
| Strong phonon-plasmon coupled modes in the graphene/silicon carbide heterosystem RJ Koch, T Seyller, JA Schaefer Physical Review B 82 (20), 201413, 2010 | 132 | 2010 |
| Epitaxial growth and electronic properties of large hexagonal graphene domains on Cu (111) thin film H Ago, K Kawahara, Y Ogawa, S Tanoue, MA Bissett, M Tsuji, ... Applied Physics Express 6 (7), 075101, 2013 | 119 | 2013 |
| Giant spin-splitting and gap renormalization driven by trions in single-layer WS2/h-BN heterostructures J Katoch, S Ulstrup, RJ Koch, S Moser, KM McCreary, S Singh, J Xu, ... Nature Physics 14 (4), 355-359, 2018 | 116 | 2018 |
| How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin–Orbit Splitting, and Strain B Schuler, JH Lee, C Kastl, KA Cochrane, CT Chen, S Refaely-Abramson, ... ACS nano 13 (9), 10520-10534, 2019 | 106 | 2019 |
| Polarization doping of graphene on silicon carbide S Mammadov, J Ristein, RJ Koch, M Ostler, C Raidel, M Wanke, ... 2D Materials 1 (3), 035003, 2014 | 106 | 2014 |
| Effects of Defects on Band Structure and Excitons in WS2 Revealed by Nanoscale Photoemission Spectroscopy C Kastl, RJ Koch, CT Chen, J Eichhorn, S Ulstrup, A Bostwick, C Jozwiak, ... ACS nano 13 (2), 1284-1291, 2019 | 100 | 2019 |
| Growth and electronic structure of nitrogen-doped graphene on Ni (111) RJ Koch, M Weser, W Zhao, F Viñes, K Gotterbarm, SM Kozlov, O Höfert, ... Physical Review B 86 (7), 075401, 2012 | 94 | 2012 |
| Rigid band shifts in two-dimensional semiconductors through external dielectric screening L Waldecker, A Raja, M Rösner, C Steinke, A Bostwick, RJ Koch, ... Physical review letters 123 (20), 206403, 2019 | 88 | 2019 |
| Black phosphorus as a bipolar pseudospin semiconductor SW Jung, SH Ryu, WJ Shin, Y Sohn, M Huh, RJ Koch, C Jozwiak, ... Nature materials 19 (3), 277-281, 2020 | 75 | 2020 |
| Buffer layer free graphene on SiC (0 0 0 1) via interface oxidation in water vapor M Ostler, F Fromm, RJ Koch, P Wehrfritz, F Speck, H Vita, S Böttcher, ... Carbon 70, 258-265, 2014 | 66 | 2014 |
| Multimodal spectromicroscopy of monolayer WS2 enabled by ultra-clean van der Waals epitaxy C Kastl, CT Chen, RJ Koch, B Schuler, TR Kuykendall, A Bostwick, ... 2D Materials 5 (4), 045010, 2018 | 55 | 2018 |
| NaSn2As2: An Exfoliatable Layered van der Waals Zintl Phase MQ Arguilla, J Katoch, K Krymowski, ND Cultrara, J Xu, X Xi, A Hanks, ... ACS nano 10 (10), 9500-9508, 2016 | 51 | 2016 |
| Direct observation of minibands in a twisted graphene/WS2 bilayer S Ulstrup, RJ Koch, S Singh, KM McCreary, BT Jonker, JT Robinson, ... Science advances 6 (14), eaay6104, 2020 | 47 | 2020 |
| Spatially Resolved Electronic Properties of Single-Layer WS2 on Transition Metal Oxides S Ulstrup, J Katoch, RJ Koch, D Schwarz, S Singh, KM McCreary, HK Yoo, ... ACS nano 10 (11), 10058-10067, 2016 | 46 | 2016 |
