Folgen
Detlef Klimm
Detlef Klimm
Leibniz Institute for Crystal Growth, Berlin, Germany
Bestätigte E-Mail-Adresse bei ikz-berlin.de - Startseite
Titel
Zitiert von
Zitiert von
Jahr
On the bulk β-Ga2O3 single crystals grown by the Czochralski method
Z Galazka, K Irmscher, R Uecker, R Bertram, M Pietsch, A Kwasniewski, ...
Journal of Crystal Growth 404, 184-191, 2014
6602014
Czochralski growth and characterization of β‐Ga2O3 single crystals
Z Galazka, R Uecker, K Irmscher, M Albrecht, D Klimm, M Pietsch, ...
Crystal Research and Technology 45 (12), 1229-1236, 2010
5152010
Czochralski grown Ga2O3 crystals
Y Tomm, P Reiche, D Klimm, T Fukuda
Journal of crystal growth 220 (4), 510-514, 2000
4492000
Scaling-up of bulk β-Ga2O3 single crystals by the Czochralski method
Z Galazka, R Uecker, D Klimm, K Irmscher, M Naumann, M Pietsch, ...
ECS Journal of Solid State Science and Technology 6 (2), Q3007, 2016
3662016
Homoepitaxial growth of β‐Ga2O3 layers by metal‐organic vapor phase epitaxy
G Wagner, M Baldini, D Gogova, M Schmidbauer, R Schewski, M Albrecht, ...
physica status solidi (a) 211 (1), 27-33, 2014
2302014
Properties of rare-earth scandate single crystals (Re= Nd− Dy)
R Uecker, B Velickov, D Klimm, R Bertram, M Bernhagen, M Rabe, ...
Journal of Crystal Growth 310 (10), 2649-2658, 2008
1752008
Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
M Baldini, M Albrecht, A Fiedler, K Irmscher, D Klimm, R Schewski, ...
Journal of Materials Science 51, 3650-3656, 2016
1572016
On the crystallization of terbium aluminium garnet
S Ganschow, D Klimm, P Reiche, R Uecker
Crystal Research and Technology: Journal of Experimental and Industrial …, 1999
1461999
Identification of Zn-vacancy–hydrogen complexes in ZnO single crystals: A challenge to positron annihilation spectroscopy
G Brauer, W Anwand, D Grambole, J Grenzer, W Skorupa, J Čížek, ...
Physical Review B 79 (11), 115212, 2009
1412009
Thermal stability of ε-Ga2O3 polymorph
R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pécz, ...
Acta Materialia 140, 411-416, 2017
1072017
Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al
Z Galazka, S Ganschow, A Fiedler, R Bertram, D Klimm, K Irmscher, ...
Journal of Crystal Growth 486, 82-90, 2018
1012018
Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions
Z Galazka, K Irmscher, R Schewski, IM Hanke, M Pietsch, S Ganschow, ...
Journal of Crystal Growth 529, 125297, 2020
972020
Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
Z Galazka, S Ganschow, R Schewski, K Irmscher, D Klimm, ...
APL Materials 7 (2), 2019
962019
Single crystal growth of the tetragonal tungsten bronze CaxBa1− xNb2O6 (x= 0.28; CBN-28)
M Eßer, M Burianek, D Klimm, M Mühlberg
Journal of crystal growth 240 (1-2), 1-5, 2002
882002
Melt growth, characterization and properties of bulk In2O3 single crystals
Z Galazka, R Uecker, K Irmscher, D Schulz, D Klimm, M Albrecht, ...
Journal of crystal growth 362, 349-352, 2013
812013
Bridgman-grown zinc oxide single crystals
D Schulz, S Ganschow, D Klimm, M Neubert, M Roßberg, M Schmidbauer, ...
Journal of crystal growth 296 (1), 27-30, 2006
732006
MgGa2O4 as a new wide bandgap transparent semiconducting oxide: growth and properties of bulk single crystals
Z Galazka, D Klimm, K Irmscher, R Uecker, M Pietsch, R Bertram, ...
physica status solidi (a) 212 (7), 1455-1460, 2015
722015
The growth of ZnO crystals from the melt
D Klimm, S Ganschow, D Schulz, R Fornari
Journal of Crystal Growth 310 (12), 3009-3013, 2008
692008
Radical-source molecular beam epitaxy of ZnMgO and ZnCdO alloys on ZnO substrates
S Sadofev, P Schäfer, YH Fan, S Blumstengel, F Henneberger, D Schulz, ...
Applied Physics Letters 91 (20), 2007
602007
Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides
Z Galazka, S Ganschow, K Irmscher, D Klimm, M Albrecht, R Schewski, ...
Progress in Crystal Growth and Characterization of Materials 67 (1), 100511, 2021
592021
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20