| Control of InAs nanowire growth directions on Si K Tomioka, J Motohisa, S Hara, T Fukui Nano letters 8 (10), 3475-3480, 2008 | 454 | 2008 |
| GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si K Tomioka, J Motohisa, S Hara, K Hiruma, T Fukui Nano letters 10 (5), 1639-1644, 2010 | 404 | 2010 |
| Single GaAs/GaAsP coaxial core− shell nanowire lasers B Hua, J Motohisa, Y Kobayashi, S Hara, T Fukui Nano letters 9 (1), 112-116, 2009 | 327 | 2009 |
| Growth of core–shell InP nanowires for photovoltaic application by selective-area metal organic vapor phase epitaxy H Goto, K Nosaki, K Tomioka, S Hara, K Hiruma, J Motohisa, T Fukui Applied Physics Express 2 (3), 035004, 2009 | 303 | 2009 |
| Fabrication and characterization of freestanding GaAs∕ AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy J Noborisaka, J Motohisa, S Hara, T Fukui Applied Physics Letters 87 (9), 2005 | 291 | 2005 |
| Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core–shell nanowires on Si (111) substrate K Tomioka, Y Kobayashi, J Motohisa, S Hara, T Fukui Nanotechnology 20 (14), 145302, 2009 | 213 | 2009 |
| III–V nanowires on Si substrate: selective-area growth and device applications K Tomioka, T Tanaka, S Hara, K Hiruma, T Fukui IEEE Journal of Selected Topics in Quantum Electronics 17 (4), 1112-1129, 2010 | 200 | 2010 |
| Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE K Ikejiri, J Noborisaka, S Hara, J Motohisa, T Fukui Journal of Crystal Growth 298, 616-619, 2007 | 188 | 2007 |
| Growth of highly uniform InAs nanowire arrays by selective-area MOVPE K Tomioka, P Mohan, J Noborisaka, S Hara, J Motohisa, T Fukui Journal of Crystal Growth 298, 644-647, 2007 | 174 | 2007 |
| Selective-area growth of III-V nanowires and their applications K Tomioka, K Ikejiri, T Tanaka, J Motohisa, S Hara, K Hiruma, T Fukui Journal of Materials Research 26 (17), 2127-2141, 2011 | 158 | 2011 |
| Vertical surrounding gate transistors using single InAs nanowires grown on Si substrates T Tanaka, K Tomioka, S Hara, J Motohisa, E Sano, T Fukui Applied physics express 3 (2), 025003, 2010 | 138 | 2010 |
| Growth characteristics of GaAs nanowires obtained by selective area metal–organic vapour-phase epitaxy K Ikejiri, T Sato, H Yoshida, K Hiruma, J Motohisa, S Hara, T Fukui Nanotechnology 19 (26), 265604, 2008 | 135 | 2008 |
| Structural transition in indium phosphide nanowires Y Kitauchi, Y Kobayashi, K Tomioka, S Hara, K Hiruma, T Fukui, ... Nano letters 10 (5), 1699-1703, 2010 | 131 | 2010 |
| Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy B Hua, J Motohisa, Y Ding, S Hara, T Fukui Applied Physics Letters 91 (13), 2007 | 93 | 2007 |
| Formation and photoluminescence characterization of quantum well wires using multiatomic steps grown by metalorganic vapor phase epitaxy S Hara, J Ishizaki, J Motohisa, T Fukui, H Hasegawa Journal of Crystal Growth 145 (1-4), 692-697, 1994 | 80 | 1994 |
| Compact high-power wavelength selectable lasers for WDM applications M Bouda, M Matsuda, K Morito, S Hara, T Watanabe, T Fujii, Y Kotaki Optical Fiber Communication Conference, TuL1, 2000 | 74 | 2000 |
| Observation of microcavity modes and waveguides in InP nanowires fabricated by selective-area metalorganic vapor-phase epitaxy Y Ding, J Motohisa, B Hua, S Hara, T Fukui Nano Letters 7 (12), 3598-3602, 2007 | 73 | 2007 |
| Crystallographic structure of InAs nanowires studied by transmission electron microscopy K Tomioka, J Motohisa, S Hara, T Fukui Japanese Journal of Applied Physics 46 (12L), L1102, 2007 | 73 | 2007 |
| Growth of InGaAs nanowires by selective-area metalorganic vapor phase epitaxy T Sato, J Motohisa, J Noborisaka, S Hara, T Fukui Journal of Crystal Growth 310 (7-9), 2359-2364, 2008 | 58 | 2008 |
| Electrical characterizations of InGaAs nanowire-top-gate field-effect transistors by selective-area metal organic vapor phase epitaxy J Noborisaka, T Sato, J Motohisa, S Hara, K Tomioka, T Fukui Japanese Journal of Applied Physics 46 (11R), 7562, 2007 | 56 | 2007 |
