Shinjiro Hara
Shinjiro Hara
Bestätigte E-Mail-Adresse bei rciqe.hokudai.ac.jp
Titel
Zitiert von
Zitiert von
Jahr
Control of InAs nanowire growth directions on Si
K Tomioka, J Motohisa, S Hara, T Fukui
Nano letters 8 (10), 3475-3480, 2008
3882008
GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si
K Tomioka, J Motohisa, S Hara, K Hiruma, T Fukui
Nano letters 10 (5), 1639-1644, 2010
3522010
Fabrication and characterization of freestanding core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy
J Noborisaka, J Motohisa, S Hara, T Fukui
Applied Physics Letters 87 (9), 093109, 2005
2832005
Single GaAs/GaAsP coaxial core− shell nanowire lasers
B Hua, J Motohisa, Y Kobayashi, S Hara, T Fukui
Nano letters 9 (1), 112-116, 2009
2782009
Growth of core–shell InP nanowires for photovoltaic application by selective-area metal organic vapor phase epitaxy
H Goto, K Nosaki, K Tomioka, S Hara, K Hiruma, J Motohisa, T Fukui
Applied Physics Express 2 (3), 035004, 2009
2732009
Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core–shell nanowires on Si (111) substrate
K Tomioka, Y Kobayashi, J Motohisa, S Hara, T Fukui
Nanotechnology 20 (14), 145302, 2009
1832009
Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE
K Ikejiri, J Noborisaka, S Hara, J Motohisa, T Fukui
Journal of Crystal Growth 298, 616-619, 2007
1632007
III–V nanowires on Si substrate: selective-area growth and device applications
K Tomioka, T Tanaka, S Hara, K Hiruma, T Fukui
IEEE Journal of Selected Topics in Quantum Electronics 17 (4), 1112-1129, 2010
1572010
Growth of highly uniform InAs nanowire arrays by selective-area MOVPE
K Tomioka, P Mohan, J Noborisaka, S Hara, J Motohisa, T Fukui
Journal of Crystal Growth 298, 644-647, 2007
1552007
Vertical surrounding gate transistors using single InAs nanowires grown on Si substrates
T Tanaka, K Tomioka, S Hara, J Motohisa, E Sano, T Fukui
Applied physics express 3 (2), 025003, 2010
1232010
Selective-area growth of III-V nanowires and their applications
K Tomioka, K Ikejiri, T Tanaka, J Motohisa, S Hara, K Hiruma, T Fukui
Journal of Materials Research 26 (17), 2127, 2011
1132011
Growth characteristics of GaAs nanowires obtained by selective area metal–organic vapour-phase epitaxy
K Ikejiri, T Sato, H Yoshida, K Hiruma, J Motohisa, S Hara, T Fukui
Nanotechnology 19 (26), 265604, 2008
1132008
Structural transition in indium phosphide nanowires
Y Kitauchi, Y Kobayashi, K Tomioka, S Hara, K Hiruma, T Fukui, ...
Nano letters 10 (5), 1699-1703, 2010
1022010
Formation and photoluminescence characterization of quantum well wires using multiatomic steps grown by metalorganic vapor phase epitaxy
S Hara, J Ishizaki, J Motohisa, T Fukui, H Hasegawa
Journal of Crystal Growth 145 (1-4), 692-697, 1994
771994
Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy
B Hua, J Motohisa, Y Ding, S Hara, T Fukui
Applied Physics Letters 91 (13), 131112, 2007
742007
Compact high-power wavelength selectable lasers for WDM applications
M Bouda, M Matsuda, K Morito, S Hara, T Watanabe, T Fujii, Y Kotaki
Optical Fiber Communication Conference, TuL1, 2000
702000
Observation of microcavity modes and waveguides in InP nanowires fabricated by selective-area metalorganic vapor-phase epitaxy
Y Ding, J Motohisa, B Hua, S Hara, T Fukui
Nano Letters 7 (12), 3598-3602, 2007
662007
Crystallographic structure of InAs nanowires studied by transmission electron microscopy
K Tomioka, J Motohisa, S Hara, T Fukui
Japanese Journal of Applied Physics 46 (12L), L1102, 2007
662007
Growth of InGaAs nanowires by selective-area metalorganic vapor phase epitaxy
T Sato, J Motohisa, J Noborisaka, S Hara, T Fukui
Journal of Crystal Growth 310 (7-9), 2359-2364, 2008
532008
Electrical characterizations of InGaAs nanowire-top-gate field-effect transistors by selective-area metal organic vapor phase epitaxy
J Noborisaka, T Sato, J Motohisa, S Hara, K Tomioka, T Fukui
Japanese Journal of Applied Physics 46 (11R), 7562, 2007
502007
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