Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing BH Lee, L Kang, R Nieh, WJ Qi, JC Lee
Applied Physics Letters 76 (14), 1926-1928, 2000
783 2000 Atomristor: nonvolatile resistance switching in atomic sheets of transition metal dichalcogenides R Ge, X Wu, M Kim, J Shi, S Sonde, L Tao, Y Zhang, JC Lee, ...
Nano letters 18 (1), 434-441, 2018
485 2018 Modeling and characterization of gate oxide reliability JC Lee, C Ih-Chin, H Chenming
IEEE Transactions on Electron Devices 35 (12), 2268-2278, 1988
426 1988 A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst L Ji, MD McDaniel, S Wang, AB Posadas, X Li, H Huang, JC Lee, ...
Nature nanotechnology 10 (1), 84-90, 2015
410 2015 Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric L Kang, BH Lee, WJ Qi, Y Jeon, R Nieh, S Gopalan, K Onishi, JC Lee
IEEE Electron Device Letters 21 (4), 181-183, 2000
341 2000 Electrical and spectroscopic comparison of interfaces on nitrided and un-nitrided Si(100) PD Kirsch, CS Kang, J Lozano, JC Lee, JG Ekerdt
Journal of applied Physics 91 (7), 4353-4363, 2002
319 2002 Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application BH Lee, L Kang, WJ Qi, R Nieh, Y Jeon, K Onishi, JC Lee
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
319 1999 Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2 O H Hwang, W Ting, B Maiti, DL Kwong, J Lee
Applied physics letters 57 (10), 1010-1011, 1990
272 1990 MOSCAP and MOSFET characteristics using ZrO/sub 2/gate dielectric deposited directly on Si WJ Qi, R Nieh, BH Lee, L Kang, Y Jeon, K Onishi, T Ngai, S Banerjee, ...
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
259 1999 Electrical and reliability characteristics of deposited directly on Si for gate dielectric application WJ Qi, R Nieh, BH Lee, L Kang, Y Jeon, JC Lee
Applied Physics Letters 77 (20), 3269-3271, 2000
237 2000 Thinnest nonvolatile memory based on monolayer h‐BN X Wu, R Ge, PA Chen, H Chou, Z Zhang, Y Zhang, S Banerjee, ...
Advanced Materials 31 (15), 1806790, 2019
224 2019 Bonding states and electrical properties of ultrathin gate dielectrics CS Kang, HJ Cho, K Onishi, R Nieh, R Choi, S Gopalan, S Krishnan, ...
Applied Physics Letters 81 (14), 2593-2595, 2002
207 2002 Spectroscopic ellipsometry characterization of high-k dielectric thin films and the high-temperature annealing effects on their optical properties YJ Cho, NV Nguyen, CA Richter, JR Ehrstein, BH Lee, JC Lee
Applied physics letters 80 (7), 1249-1251, 2002
202 2002 Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon BH Lee, Y Jeon, K Zawadzki, WJ Qi, J Lee
Applied physics letters 74 (21), 3143-3145, 1999
190 1999 Temperature acceleration of time-dependent dielectric breakdown R Moazzami, JC Lee, C Hu
IEEE Transactions on Electron Devices 36 (11), 2462-2465, 1989
176 1989 Zero-static power radio-frequency switches based on MoS2 atomristors M Kim, R Ge, X Wu, X Lan, J Tice, JC Lee, D Akinwande
Nature communications 9 (1), 2524, 2018
174 2018 Bias-temperature instabilities of polysilicon gate HfO/sub 2/MOSFETs K Onishi, R Choi, CS Kang, HJ Cho, YH Kim, RE Nieh, J Han, ...
IEEE Transactions on Electron Devices 50 (6), 1517-1524, 2003
168 2003 A model for electrical conduction in metal‐ferroelectric‐metal thin‐film capacitors C Sudhama, AC Campbell, PD Maniar, RE Jones, R Moazzami, ...
Journal of applied physics 75 (2), 1014-1022, 1994
165 1994 Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application WJ Qi, R Nieh, E Dharmarajan, BH Lee, Y Jeon, L Kang, K Onishi, JC Lee
Applied Physics Letters 77 (11), 1704-1706, 2000
159 2000 Electrical properties of gate dielectric on SiGe T Ngai, WJ Qi, R Sharma, J Fretwell, X Chen, JC Lee, S Banerjee
Applied Physics Letters 76 (4), 502-504, 2000
154 2000