Semiconductor optoelectronic device and method of fabricating the same J Son, HY Ryu, T Sakong, H Paek, S Lee US Patent 7,724,795, 2010 | 274 | 2010 |
Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution KK Kim, S Lee, H Kim, JC Park, SN Lee, Y Park, SJ Park, SW Kim Applied Physics Letters 94 (7), 2009 | 172 | 2009 |
Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme SH Park, J Kim, H Jeon, T Sakong, SN Lee, S Chae, Y Park, CH Jeong, ... Applied Physics Letters 83 (11), 2121-2123, 2003 | 125 | 2003 |
Characteristics of GaN‐based laser diodes for post‐DVD applications OH Nam, KH Ha, JS Kwak, SN Lee, KK Choi, TH Chang, SH Chae, ... physica status solidi (a) 201 (12), 2717-2720, 2004 | 113 | 2004 |
High-power GaN-based blue-violet laser diodes with AlGaN∕ GaN multiquantum barriers SN Lee, SY Cho, HY Ryu, JK Son, HS Paek, T Sakong, T Jang, KK Choi, ... Applied physics letters 88 (11), 2006 | 97 | 2006 |
Electrical characteristics of contacts to thin film N-polar n-type GaN H Kim, JH Ryou, RD Dupuis, SN Lee, Y Park, JW Jeon, TY Seong Applied Physics Letters 93 (19), 2008 | 84 | 2008 |
Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures H Kim, KK Choi, KK Kim, J Cho, SN Lee, Y Park, JS Kwak, TY Seong Optics letters 33 (11), 1273-1275, 2008 | 75 | 2008 |
Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters YH Cho, SK Lee, HS Kwack, JY Kim, KS Lim, HM Kim, TW Kang, SN Lee, ... Applied physics letters 83 (13), 2578-2580, 2003 | 69 | 2003 |
Laser display device J Son, JW Lee, H Paek, S Lee, T Sakong US Patent App. 11/513,224, 2007 | 67 | 2007 |
Characteristics of long wavelength InGaN quantum well laser diodes KS Kim, JK Son, SN Lee, YJ Sung, HS Paek, HK Kim, MY Kim, KH Ha, ... Applied Physics Letters 92 (10), 2008 | 62 | 2008 |
High-reflectance and thermally stable AgCu alloy p-type reflectors for GaN-based light-emitting diodes H Kim, KH Baik, J Cho, JW Lee, S Yoon, H Kim, SN Lee, C Sone, Y Park, ... IEEE Photonics Technology Letters 19 (5), 336-338, 2007 | 61 | 2007 |
Wet Chemical Etching of Semipolar GaN Planes to Obtain Brighter and Cost‐Competitive Light Emitters S Jung, KR Song, SN Lee, H Kim Advanced Materials 25 (32), 4470-4476, 2013 | 59 | 2013 |
Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices SN Lee, HS Paek, JK Son, H Kim, KK Kim, KH Ha, OH Nam, Y Park Journal of Electroceramics 23, 406-409, 2009 | 59 | 2009 |
Monolithic InGaN-based white light-emitting diodes with blue, green, and amber emissions SN Lee, HS Paek, H Kim, T Jang, Y Park Applied Physics Letters 92 (8), 2008 | 57 | 2008 |
Interpretation of combined infrared, submillimeter, and millimeter thermal flux data obtained during the Rosetta fly-by of Asteroid (21) Lutetia S Keihm, F Tosi, L Kamp, F Capaccioni, S Gulkis, D Grassi, M Hofstadter, ... Icarus 221 (1), 395-404, 2012 | 56 | 2012 |
High-performance blue InGaN laser diodes with single-quantum-well active layers HY Ryu, KH Ha, SN Lee, T Jang, JK Son, HS Paek, YJ Sung, HK Kim, ... IEEE Photonics technology letters 19 (21), 1717-1719, 2007 | 56 | 2007 |
Metallization contacts to nonpolar a-plane n-type GaN H Kim, SN Lee, Y Park, JS Kwak, TY Seong Applied Physics Letters 93 (3), 2008 | 55 | 2008 |
Determination of internal parameters in blue InGaN laser diodes by the measurement of cavity-length dependent characteristics HY Ryu, KH Ha, JK Son, SN Lee, HS Paek, T Jang, YJ Sung, KS Kim, ... Applied Physics Letters 93 (1), 2008 | 54 | 2008 |
Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire SN Lee, HS Paek, JK Son, T Sakong, OH Nam, Y Park Journal of crystal growth 307 (2), 358-362, 2007 | 52 | 2007 |
Highly stable temperature characteristics of InGaN blue laser diodes HY Ryu, KH Ha, SN Lee, T Jang, HK Kim, JH Chae, KS Kim, KK Choi, ... Applied physics letters 89 (3), 2006 | 52 | 2006 |