Wei Zhang
Wei Zhang
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Zitiert von
Zitiert von
Designing crystallization in phase-change materials for universal memory and neuro-inspired computing
W Zhang, R Mazzarello, M Wuttig, E Ma
Nature Reviews Materials 4, 150-168, 2019
Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing
F Rao, K Ding, Y Zhou, Y Zheng, M Xia, S Lv, Z Song, S Feng, ...
Science, 1423-1427, 2017
Role of vacancies in metal–insulator transitions of crystalline phase-change materials
W Zhang, A Thiess, P Zalden, R Zeller, PH Dederichs, JY Raty, M Wuttig, ...
Nature materials 11 (11), 952-956, 2012
Phase-change heterostructure enables ultralow noise and drift for memory operation
K Ding, J Wang, Y Zhou, H Tian, L Lu, R Mazzarello, C Jia, W Zhang, ...
Science 366 (6462), 210-215, 2019
Aging mechanisms in amorphous phase-change materials
JY Raty, W Zhang, J Luckas, C Chen, R Mazzarello, C Bichara, M Wuttig
Nature communications 6, 7467, 2015
Bonding Nature of Local Structural Motifs in Amorphous GeTe
VL Deringer, W Zhang, M Lumeij, S Maintz, M Wuttig, R Mazzarello, ...
Angewandte Chemie International Edition 53 (40), 10817-10820, 2014
Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase‐Change Materials
M Xu, X Mai, J Lin, W Zhang, Y Li, Y He, H Tong, X Hou, P Zhou, X Miao
Advanced Functional Materials 30 (50), 2003419, 2020
Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials
V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ...
Scientific Reports 6, 23843, 2016
Element-resolved atomic structure imaging of rocksalt Ge2Sb2Te5 phase-change material
B Zhang, W Zhang, Z Shen, Y Chen, J Li, S Zhang, Z Zhang, M Wuttig, ...
Applied Physics Letters 108 (19), 191902, 2016
Blue phosphorene monolayers as potential nano sensors for volatile organic compounds under point defects
S Sun, T Hussain, W Zhang, A Karton
Applied Surface Science 486, 52-57, 2019
Electronic and Magnetic Properties of Zigzag Graphene Nanoribbons on the (111) Surface of Cu, Ag, and Au
Y Li, W Zhang, M Morgenstern, R Mazzarello
Physical review letters 110 (21), 216804, 2013
Anderson localization of electrons in single crystals: LixFe7Se8
T Ying, Y Gu, X Chen, X Wang, S Jin, L Zhao, W Zhang, X Chen
Science Advances 2 (2), e1501283, 2016
Crystallization Properties of the Ge2Sb2Te5 Phase‐Change Compound from Advanced Simulations
I Ronneberger, W Zhang, H Eshet, R Mazzarello
Advanced Functional Materials 25, 6407-6413, 2015
Unveiling the structural origin to control resistance drift in phase-change memory materials
W Zhang, E Ma
Materials Today 41, 156-176, 2020
How fragility makes phase-change data storage robust: insights from ab initio simulations
W Zhang, I Ronneberger, P Zalden, M Xu, M Salinga, M Wuttig, ...
Scientific Reports 4, 6529, 2014
Density-functional theory guided advances in phase-change materials and memories
W Zhang, VL Deringer, R Dronskowski, R Mazzarello, E Ma, M Wuttig
MRS Bulletin 40 (10), 856-869, 2015
In situ TEM study of deformation-induced crystalline-to-amorphous transition in silicon
YC Wang, W Zhang, LY Wang, Z Zhuang, E Ma, J Li, ZW Shan
NPG Asia Materials 8 (7), e291-e291, 2016
A Review on Disorder-Driven Metal–Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials
JJ Wang, YZ Xu, R Mazzarello, M Wuttig, W Zhang
Materials 10 (8), 862, 2017
Phase-change materials in electronics and photonics
W Zhang, R Mazzarello, E Ma
MRS Bulletin 44 (9), 686-690, 2019
Chemical Design Principles for Cache-Type Sc−Sb−Te Phase-Change Memory Materials
GM Zewdie, YX Zhou, L Sun, F Rao, VL Deringer, R Mazzarello, W Zhang
Chemistry of Materials 31, 4008-4015, 2019
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