| Designing crystallization in phase-change materials for universal memory and neuro-inspired computing W Zhang, R Mazzarello, M Wuttig, E Ma Nature Reviews Materials 4, 150-168, 2019 | 548 | 2019 |
| Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing F Rao, K Ding, Y Zhou, Y Zheng, M Xia, S Lv, Z Song, S Feng, ... Science, 1423-1427, 2017 | 441 | 2017 |
| Role of vacancies in metal–insulator transitions of crystalline phase-change materials W Zhang, A Thiess, P Zalden, R Zeller, PH Dederichs, JY Raty, M Wuttig, ... Nature materials 11 (11), 952-956, 2012 | 280 | 2012 |
| Phase-change heterostructure enables ultralow noise and drift for memory operation K Ding, J Wang, Y Zhou, H Tian, L Lu, R Mazzarello, C Jia, W Zhang, ... Science 366 (6462), 210-215, 2019 | 237 | 2019 |
| Aging mechanisms in amorphous phase-change materials JY Raty, W Zhang, J Luckas, C Chen, R Mazzarello, C Bichara, M Wuttig Nature communications 6, 7467, 2015 | 214 | 2015 |
| Bonding Nature of Local Structural Motifs in Amorphous GeTe VL Deringer, W Zhang, M Lumeij, S Maintz, M Wuttig, R Mazzarello, ... Angewandte Chemie International Edition 53 (40), 10817-10820, 2014 | 126 | 2014 |
| Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase‐Change Materials M Xu, X Mai, J Lin, W Zhang, Y Li, Y He, H Tong, X Hou, P Zhou, X Miao Advanced Functional Materials 30 (50), 2003419, 2020 | 118 | 2020 |
| Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ... Scientific Reports 6, 23843, 2016 | 110 | 2016 |
| Element-resolved atomic structure imaging of rocksalt Ge2Sb2Te5 phase-change material B Zhang, W Zhang, Z Shen, Y Chen, J Li, S Zhang, Z Zhang, M Wuttig, ... Applied Physics Letters 108 (19), 191902, 2016 | 95 | 2016 |
| Blue phosphorene monolayers as potential nano sensors for volatile organic compounds under point defects S Sun, T Hussain, W Zhang, A Karton Applied Surface Science 486, 52-57, 2019 | 81 | 2019 |
| Electronic and Magnetic Properties of Zigzag Graphene Nanoribbons on the (111) Surface of Cu, Ag, and Au Y Li, W Zhang, M Morgenstern, R Mazzarello Physical review letters 110 (21), 216804, 2013 | 77 | 2013 |
| Anderson localization of electrons in single crystals: LixFe7Se8 T Ying, Y Gu, X Chen, X Wang, S Jin, L Zhao, W Zhang, X Chen Science Advances 2 (2), e1501283, 2016 | 72 | 2016 |
| Crystallization Properties of the Ge2Sb2Te5 Phase‐Change Compound from Advanced Simulations I Ronneberger, W Zhang, H Eshet, R Mazzarello Advanced Functional Materials 25, 6407-6413, 2015 | 72 | 2015 |
| Unveiling the structural origin to control resistance drift in phase-change memory materials W Zhang, E Ma Materials Today 41, 156-176, 2020 | 71 | 2020 |
| How fragility makes phase-change data storage robust: insights from ab initio simulations W Zhang, I Ronneberger, P Zalden, M Xu, M Salinga, M Wuttig, ... Scientific Reports 4, 6529, 2014 | 71 | 2014 |
| Density-functional theory guided advances in phase-change materials and memories W Zhang, VL Deringer, R Dronskowski, R Mazzarello, E Ma, M Wuttig MRS Bulletin 40 (10), 856-869, 2015 | 62 | 2015 |
| In situ TEM study of deformation-induced crystalline-to-amorphous transition in silicon YC Wang, W Zhang, LY Wang, Z Zhuang, E Ma, J Li, ZW Shan NPG Asia Materials 8 (7), e291-e291, 2016 | 58 | 2016 |
| A Review on Disorder-Driven Metal–Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials JJ Wang, YZ Xu, R Mazzarello, M Wuttig, W Zhang Materials 10 (8), 862, 2017 | 55 | 2017 |
| Phase-change materials in electronics and photonics W Zhang, R Mazzarello, E Ma MRS Bulletin 44 (9), 686-690, 2019 | 54 | 2019 |
| Chemical Design Principles for Cache-Type Sc−Sb−Te Phase-Change Memory Materials GM Zewdie, YX Zhou, L Sun, F Rao, VL Deringer, R Mazzarello, W Zhang Chemistry of Materials 31, 4008-4015, 2019 | 42 | 2019 |
Riccardo MazzarelloSapienza UniversityBestätigte E-Mail-Adresse bei uniroma1.it
