Serge Oktyabrsky
Serge Oktyabrsky
SUNY Polytechnic Institute
Verified email at sunypoly.edu
Title
Cited by
Cited by
Year
Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition
JF Muth, RM Kolbas, AK Sharma, S Oktyabrsky, J Narayan
Journal of Applied Physics 85 (11), 7884-7887, 1999
4291999
Fundamentals of III-V semiconductor MOSFETs
S Oktyabrsky, DY Peide
Springer, 2010
2592010
Defects and interfaces in epitaxial and heterostructures
J Narayan, K Dovidenko, AK Sharma, S Oktyabrsky
Journal of Applied Physics 84 (5), 2597-2601, 1998
2491998
Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer
S Koveshnikov, W Tsai, I Ok, JC Lee, V Torkanov, M Yakimov, ...
Applied physics letters 88 (2), 022106, 2006
2292006
Aluminum nitride films on different orientations of sapphire and silicon
K Dovidenko, S Oktyabrsky, J Narayan, M Razeghi
Journal of Applied Physics 79 (5), 2439-2445, 1996
1661996
Diffusion, activation, and regrowth behavior of high dose P implants in Ge
A Satta, E Simoen, R Duffy, T Janssens, T Clarysse, A Benedetti, ...
Applied Physics Letters 88 (16), 162118, 2006
1182006
Solid phase epitaxy versus random nucleation and growth in sub- wide fin field-effect transistors
R Duffy, MJH Van Dal, BJ Pawlak, M Kaiser, RGR Weemaes, B Degroote, ...
Applied Physics Letters 90 (24), 241912, 2007
1142007
Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography
MJH Van Dal, N Collaert, G Doornbos, G Vellianitis, G Curatola, ...
2007 IEEE symposium on VLSI technology, 110-111, 2007
1062007
High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon
S Oktyabrsky, V Tokranov, M Yakimov, R Moore, S Koveshnikov, W Tsai, ...
Materials Science and Engineering: B 135 (3), 272-276, 2006
982006
Ultra low thermal budget anneals for 3D memories: Access device formation
K Huet, C Boniface, R Negru, J Venturini
AIP Conference Proceedings 1496 (1), 135-138, 2012
912012
Small-Signal Response of Inversion Layers in High-Mobility MOSFETs Made With Thin High- Dielectrics
A Ali, H Madan, S Koveshnikov, S Oktyabrsky, R Kambhampati, T Heeg, ...
IEEE transactions on electron devices 57 (4), 742-748, 2010
912010
Boron uphill diffusion during ultrashallow junction formation
R Duffy, VC Venezia, A Heringa, TWT Hüsken, MJP Hopstaken, ...
Applied Physics Letters 82 (21), 3647-3649, 2003
862003
Exciton-lattice polaritons in multiple-quantum-well-based photonic crystals
D Goldberg, LI Deych, AA Lisyansky, Z Shi, VM Menon, V Tokranov, ...
Nature Photonics 3 (11), 662-666, 2009
782009
based metal oxide semiconductor capacitors with atomic layer deposition gate oxide demonstrating low gate leakage current and equivalent oxide …
S Koveshnikov, N Goel, P Majhi, H Wen, MB Santos, S Oktyabrsky, ...
Applied Physics Letters 92 (22), 222904, 2008
772008
CMOS device optimization for mixed-signal technologies
PA Stolk, HP Tuinhout, R Duffy, E Augendre, LP Bellefroid, MJB Bolt, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
772001
Characteristics of stacking faults in AlN thin films
K Dovidenko, S Oktyabrsky, J Narayan
Journal of applied physics 82 (9), 4296-4299, 1997
751997
Optical analog self-interference cancellation using electro-absorption modulators
MP Chang, M Fok, A Hofmaier, PR Prucnal
IEEE microwave and wireless components letters 23 (2), 99-101, 2013
692013
Self-aligned n-and p-channel GaAs MOSFETs on undoped and p-type substrates using HfO2 and silicon interface passivation layer
IJ Ok, H Kim, M Zhang, T Lee, F Zhu, L Yu, S Koveshnikov, W Tsai, ...
2006 International Electron Devices Meeting, 1-4, 2006
692006
Impact resistant pane and mounting
B Lewkowitz
US Patent 6,715,245, 2004
682004
Addressing the gate stack challenge for high mobility InxGa1-xAs channels for NFETs
N Goel, D Heh, S Koveshnikov, I Ok, S Oktyabrsky, V Tokranov, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
672008
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