Serge Oktyabrsky

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	All	Since 2016
Citations	6439	1750
h-index	39	20
i10-index	146	46

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Co-authors

Jay NarayanJohn C. Fan Family Distinguished Chair Professor of Materials Science, North Carolina StateVerified email at ncsu.edu
John MuthNorth Carolina State UniversityVerified email at ncsu.edu
ramki kalyanaramanProfessor of Materials Science and Chemical Engineering, The University of TennesseeVerified email at utk.edu
Vladimir MitinSUNY Distinguished Professor, University at BuffaloVerified email at buffalo.edu
Andrei SergeevSUNY RFVerified email at buffalo.edu
ALEXANDER KVITInstrument innovator & Reseacher, University of Wisconsin -MadisonVerified email at wisc.edu
Manijeh RazeghiNorthwestern UniversityVerified email at eecs.northwestern.edu
Darrell G. SchlomCornell UniversityVerified email at cornell.edu
Peide YeRichard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
Ashkar AliIntel CorporationVerified email at psu.edu
R. D. VisputeBlue Wave SemiconductorsVerified email at bluewavesemi.com
Lev DeychQueens College of CUNYVerified email at qc.cuny.edu
Alexander LisyanskyProfessor of Physics, Queens College of the City University of New YorkVerified email at qc.cuny.edu
Michael ShurPatricia W. and C. Sheldon Roberts Professor, Rensselaer PolytechnicVerified email at rpi.edu
Jerry WoodallUC DavisVerified email at ucdavis.edu
Dmitry VekslerThe Aerospace Corporation

Serge Oktyabrsky

SUNY Polytechnic Institute

Verified email at sunypoly.edu


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Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition JF Muth, RM Kolbas, AK Sharma, S Oktyabrsky, J Narayan Journal of Applied Physics 85 (11), 7884-7887, 1999	429	1999
Fundamentals of III-V semiconductor MOSFETs S Oktyabrsky, DY Peide Springer, 2010	259	2010
Defects and interfaces in epitaxial and heterostructures J Narayan, K Dovidenko, AK Sharma, S Oktyabrsky Journal of Applied Physics 84 (5), 2597-2601, 1998	249	1998
Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer S Koveshnikov, W Tsai, I Ok, JC Lee, V Torkanov, M Yakimov, ... Applied physics letters 88 (2), 022106, 2006	229	2006
Aluminum nitride films on different orientations of sapphire and silicon K Dovidenko, S Oktyabrsky, J Narayan, M Razeghi Journal of Applied Physics 79 (5), 2439-2445, 1996	166	1996
Diffusion, activation, and regrowth behavior of high dose P implants in Ge A Satta, E Simoen, R Duffy, T Janssens, T Clarysse, A Benedetti, ... Applied Physics Letters 88 (16), 162118, 2006	118	2006
Solid phase epitaxy versus random nucleation and growth in sub- wide fin field-effect transistors R Duffy, MJH Van Dal, BJ Pawlak, M Kaiser, RGR Weemaes, B Degroote, ... Applied Physics Letters 90 (24), 241912, 2007	114	2007
Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography MJH Van Dal, N Collaert, G Doornbos, G Vellianitis, G Curatola, ... 2007 IEEE symposium on VLSI technology, 110-111, 2007	106	2007
High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon S Oktyabrsky, V Tokranov, M Yakimov, R Moore, S Koveshnikov, W Tsai, ... Materials Science and Engineering: B 135 (3), 272-276, 2006	98	2006
Ultra low thermal budget anneals for 3D memories: Access device formation K Huet, C Boniface, R Negru, J Venturini AIP Conference Proceedings 1496 (1), 135-138, 2012	91	2012
Small-Signal Response of Inversion Layers in High-Mobility MOSFETs Made With Thin High- Dielectrics A Ali, H Madan, S Koveshnikov, S Oktyabrsky, R Kambhampati, T Heeg, ... IEEE transactions on electron devices 57 (4), 742-748, 2010	91	2010
Boron uphill diffusion during ultrashallow junction formation R Duffy, VC Venezia, A Heringa, TWT Hüsken, MJP Hopstaken, ... Applied Physics Letters 82 (21), 3647-3649, 2003	86	2003
Exciton-lattice polaritons in multiple-quantum-well-based photonic crystals D Goldberg, LI Deych, AA Lisyansky, Z Shi, VM Menon, V Tokranov, ... Nature Photonics 3 (11), 662-666, 2009	78	2009
based metal oxide semiconductor capacitors with atomic layer deposition gate oxide demonstrating low gate leakage current and equivalent oxide … S Koveshnikov, N Goel, P Majhi, H Wen, MB Santos, S Oktyabrsky, ... Applied Physics Letters 92 (22), 222904, 2008	77	2008
CMOS device optimization for mixed-signal technologies PA Stolk, HP Tuinhout, R Duffy, E Augendre, LP Bellefroid, MJB Bolt, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001	77	2001
Characteristics of stacking faults in AlN thin films K Dovidenko, S Oktyabrsky, J Narayan Journal of applied physics 82 (9), 4296-4299, 1997	75	1997
Optical analog self-interference cancellation using electro-absorption modulators MP Chang, M Fok, A Hofmaier, PR Prucnal IEEE microwave and wireless components letters 23 (2), 99-101, 2013	69	2013
Self-aligned n-and p-channel GaAs MOSFETs on undoped and p-type substrates using HfO2 and silicon interface passivation layer IJ Ok, H Kim, M Zhang, T Lee, F Zhu, L Yu, S Koveshnikov, W Tsai, ... 2006 International Electron Devices Meeting, 1-4, 2006	69	2006
Impact resistant pane and mounting B Lewkowitz US Patent 6,715,245, 2004	68	2004
Addressing the gate stack challenge for high mobility In_xGa_1-xAs channels for NFETs N Goel, D Heh, S Koveshnikov, I Ok, S Oktyabrsky, V Tokranov, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008	67	2008

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