Serge Oktyabrsky
Serge Oktyabrsky
SUNY Polytechnic Institute
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Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition
JF Muth, RM Kolbas, AK Sharma, S Oktyabrsky, J Narayan
Journal of Applied Physics 85 (11), 7884-7887, 1999
Fundamentals of III-V semiconductor MOSFETs
S Oktyabrsky, DY Peide
Springer, 2010
Defects and interfaces in epitaxial and heterostructures
J Narayan, K Dovidenko, AK Sharma, S Oktyabrsky
Journal of Applied Physics 84 (5), 2597-2601, 1998
Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer
S Koveshnikov, W Tsai, I Ok, JC Lee, V Torkanov, M Yakimov, ...
Applied physics letters 88 (2), 022106, 2006
Aluminum nitride films on different orientations of sapphire and silicon
K Dovidenko, S Oktyabrsky, J Narayan, M Razeghi
Journal of Applied Physics 79 (5), 2439-2445, 1996
Diffusion, activation, and regrowth behavior of high dose P implants in Ge
A Satta, E Simoen, R Duffy, T Janssens, T Clarysse, A Benedetti, ...
Applied Physics Letters 88 (16), 162118, 2006
Solid phase epitaxy versus random nucleation and growth in sub- wide fin field-effect transistors
R Duffy, MJH Van Dal, BJ Pawlak, M Kaiser, RGR Weemaes, B Degroote, ...
Applied Physics Letters 90 (24), 241912, 2007
Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography
MJH Van Dal, N Collaert, G Doornbos, G Vellianitis, G Curatola, ...
2007 IEEE symposium on VLSI technology, 110-111, 2007
High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon
S Oktyabrsky, V Tokranov, M Yakimov, R Moore, S Koveshnikov, W Tsai, ...
Materials Science and Engineering: B 135 (3), 272-276, 2006
Ultra low thermal budget anneals for 3D memories: Access device formation
K Huet, C Boniface, R Negru, J Venturini
AIP Conference Proceedings 1496 (1), 135-138, 2012
Small-Signal Response of Inversion Layers in High-Mobility MOSFETs Made With Thin High- Dielectrics
A Ali, H Madan, S Koveshnikov, S Oktyabrsky, R Kambhampati, T Heeg, ...
IEEE transactions on electron devices 57 (4), 742-748, 2010
Boron uphill diffusion during ultrashallow junction formation
R Duffy, VC Venezia, A Heringa, TWT Hüsken, MJP Hopstaken, ...
Applied Physics Letters 82 (21), 3647-3649, 2003
Exciton-lattice polaritons in multiple-quantum-well-based photonic crystals
D Goldberg, LI Deych, AA Lisyansky, Z Shi, VM Menon, V Tokranov, ...
Nature Photonics 3 (11), 662-666, 2009
based metal oxide semiconductor capacitors with atomic layer deposition gate oxide demonstrating low gate leakage current and equivalent oxide …
S Koveshnikov, N Goel, P Majhi, H Wen, MB Santos, S Oktyabrsky, ...
Applied Physics Letters 92 (22), 222904, 2008
CMOS device optimization for mixed-signal technologies
PA Stolk, HP Tuinhout, R Duffy, E Augendre, LP Bellefroid, MJB Bolt, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
Characteristics of stacking faults in AlN thin films
K Dovidenko, S Oktyabrsky, J Narayan
Journal of applied physics 82 (9), 4296-4299, 1997
Optical analog self-interference cancellation using electro-absorption modulators
MP Chang, M Fok, A Hofmaier, PR Prucnal
IEEE microwave and wireless components letters 23 (2), 99-101, 2013
Self-aligned n-and p-channel GaAs MOSFETs on undoped and p-type substrates using HfO2 and silicon interface passivation layer
IJ Ok, H Kim, M Zhang, T Lee, F Zhu, L Yu, S Koveshnikov, W Tsai, ...
2006 International Electron Devices Meeting, 1-4, 2006
Impact resistant pane and mounting
B Lewkowitz
US Patent 6,715,245, 2004
Addressing the gate stack challenge for high mobility InxGa1-xAs channels for NFETs
N Goel, D Heh, S Koveshnikov, I Ok, S Oktyabrsky, V Tokranov, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
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