Martin Albrecht
Martin Albrecht
Leibniz-Institut für Kristallzüchtung
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
T Metzger, R Höpler, E Born, O Ambacher, M Stutzmann, R Stömmer, ...
Philosophical magazine A 77 (4), 1013-1025, 1998
Grating-coupling of surface plasmons onto metallic tips: a nanoconfined light source
C Ropers, CC Neacsu, T Elsaesser, M Albrecht, MB Raschke, C Lienau
Nano letters 7 (9), 2784-2788, 2007
Catalytic activity of faceted gold nanoparticles studied by a model reaction: evidence for substrate-induced surface restructuring
S Wunder, Y Lu, M Albrecht, M Ballauff
Acs Catalysis 1 (8), 908-916, 2011
Czochralski growth and characterization of β‐Ga2O3 single crystals
Z Galazka, R Uecker, K Irmscher, M Albrecht, D Klimm, M Pietsch, ...
Crystal Research and Technology 45 (12), 1229-1236, 2010
Metals and ligand reactivity
EC Constable, M Albrecht
Ellis Horwood, 1990
Systematic experimental and theoretical investigation of intersubband absorption in quantum wells
M Tchernycheva, L Nevou, L Doyennette, FH Julien, E Warde, F Guillot, ...
Physical Review B—Condensed Matter and Materials Physics 73 (12), 125347, 2006
Si-and Sn-doped homoepitaxial β-Ga2O3 layers grown by MOVPE on (010)-oriented substrates
M Baldini, M Albrecht, A Fiedler, K Irmscher, R Schewski, G Wagner
ECS Journal of Solid State Science and Technology 6 (2), Q3040, 2016
Strained state of Ge (Si) islands on Si: Finite element calculations and comparison to convergent beam electron‐diffraction measurements
S Christiansen, M Albrecht, HP Strunk, HJ Maier
Applied physics letters 64 (26), 3617-3619, 1994
Homoepitaxial growth of β‐Ga2O3 layers by metal‐organic vapor phase epitaxy
G Wagner, M Baldini, D Gogova, M Schmidbauer, R Schewski, M Albrecht, ...
physica status solidi (a) 211 (1), 27-33, 2014
GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
PK Kandaswamy, F Guillot, E Bellet-Amalric, E Monroy, L Nevou, ...
Journal of Applied Physics 104 (9), 2008
Nitride semiconductors
P Ruterana, M Albrecht, J Neugebauer
Handbook on Materials and Devices, 2003
State of transition metal catalysts during carbon nanotube growth
S Hofmann, R Blume, CT Wirth, M Cantoro, R Sharma, C Ducati, ...
The Journal of Physical Chemistry C 113 (5), 1648-1656, 2009
Electrical compensation by Ga vacancies in Ga2O3 thin films
E Korhonen, F Tuomisto, D Gogova, G Wagner, M Baldini, Z Galazka, ...
Applied Physics Letters 106 (24), 2015
Properties of rare-earth scandate single crystals (Re= Nd− Dy)
R Uecker, B Velickov, D Klimm, R Bertram, M Bernhagen, M Rabe, ...
Journal of Crystal Growth 310 (10), 2649-2658, 2008
Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
D Gogova, G Wagner, M Baldini, M Schmidbauer, K Irmscher, R Schewski, ...
Journal of Crystal Growth 401, 665-669, 2014
Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
M Baldini, M Albrecht, A Fiedler, K Irmscher, D Klimm, R Schewski, ...
Journal of Materials Science 51, 3650-3656, 2016
Phonons as probes in self-organized SiGe islands
J Groenen, R Carles, S Christiansen, M Albrecht, W Dorsch, HP Strunk, ...
Applied physics letters 71 (26), 3856-3858, 1997
Stacking faults as quantum wells for excitons in wurtzite GaN
YT Rebane, YG Shreter, M Albrecht
physica status solidi (a) 164 (1), 141-144, 1997
Microstructure of novel superhard nanocrystalline-amorphous composites as analyzed by high resolution transmission electron microscopy
S Christiansen, M Albrecht, HP Strunk, S Veprek
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
Surface ripples, crosshatch pattern, and dislocation formation: Cooperating mechanisms in lattice mismatch relaxation
M Albrecht, S Christiansen, J Michler, W Dorsch, HP Strunk, PO Hansson, ...
Applied physics letters 67 (9), 1232-1234, 1995
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