Felice Crupi
Felice Crupi
Verified email at unical.it
Title
Cited by
Cited by
Year
A 2.6 nW, 0.45 V temperature-compensated subthreshold CMOS voltage reference
L Magnelli, F Crupi, P Corsonello, C Pace, G Iannaccone
IEEE Journal of Solid-State Circuits 46 (2), 465-474, 2010
2542010
On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers
F Crupi, R Degraeve, G Groeseneken, T Nigam, HE Maes
IEEE Transactions on Electron Devices 45 (11), 2329-2334, 1998
1161998
Noise in Drain and Gate Current of MOSFETs With High- Gate Stacks
P Magnone, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, L Pantisano, ...
IEEE Transactions on Device and Materials Reliability 9 (2), 180-189, 2009
1062009
Impact strain engineering on gate stack quality and reliability
C Claeys, E Simoen, S Put, G Giusi, F Crupi
Solid-State Electronics 52 (8), 1115-1126, 2008
1022008
Degradation and hard breakdown transient of thin gate oxides in capacitors: Dependence on oxide thickness
S Lombardo, A La Magna, C Spinella, C Gerardi, F Crupi
Journal of applied physics 86 (11), 6382-6391, 1999
991999
Correlation between Stress-Induced Leakage Current (SILC) and the HfO/sub 2/bulk trap density in a SiO/sub 2//HfO/sub 2/stack
F Crupi, R Degraeve, A Kerber, DH Kwak, G Groeseneken
2004 IEEE International Reliability Physics Symposium. Proceedings, 181-187, 2004
862004
Design of a 75‐nW, 0.5‐V subthreshold complementary metal–oxide–semiconductor operational amplifier
L Magnelli, FA Amoroso, F Crupi, G Cappuccino, G Iannaccone
International Journal of Circuit Theory and Applications 42 (9), 967-977, 2014
722014
Electrical and thermal transient during dielectric breakdown of thin oxides in metal--silicon capacitors
S Lombardo, F Crupi, A La Magna, C Spinella, A Terrasi, A La Mantia, ...
Journal of applied physics 84 (1), 472-479, 1998
661998
Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics
G Giusi, F Crupi, C Pace, C Ciofi, G Groeseneken
IEEE transactions on electron devices 53 (4), 823-828, 2006
612006
Structural and electrical analysis of the atomic layer deposition of capacitors with and without an interface control layer
A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ...
Applied Physics Letters 97 (5), 052904, 2010
602010
Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks
F Crupi, P Srinivasan, P Magnone, E Simoen, C Pace, D Misra, C Claeys
IEEE Electron Device Letters 27 (8), 688-691, 2006
592006
Impact of TFET unidirectionality and ambipolarity on the performance of 6T SRAM cells
S Strangio, P Palestri, D Esseni, L Selmi, F Crupi, S Richter, QT Zhao, ...
IEEE Journal of the Electron Devices Society 3 (3), 223-232, 2015
522015
Impact of hot carriers on nMOSFET variability in 45-and 65-nm CMOS technologies
P Magnone, F Crupi, N Wils, R Jain, H Tuinhout, P Andricciola, G Giusi, ...
IEEE Transactions on Electron Devices 58 (8), 2347-2353, 2011
512011
On the Temperature and Field Dependence of Trap-Assisted Tunneling Current in GeJunctions
E Simoen, F De Stefano, G Eneman, B De Jaeger, C Claeys, F Crupi
IEEE electron device letters 30 (5), 562-564, 2009
512009
Reliability comparison of triple-gate versus planar SOI FETs
F Crupi, B Kaczer, R Degraeve, V Subramanian, P Srinivasan, E Simoen, ...
IEEE Transactions on electron devices 53 (9), 2351-2357, 2006
502006
Observation of hot-carrier-induced nFET gate-oxide breakdown in dynamically stressed CMOS circuits
B Kaczer, F Crupi, R Degraeve, P Roussel, C Ciofi, G Groeseneken
Digest. International Electron Devices Meeting,, 171-174, 2002
472002
A Sub-Voltage Reference Operating at 150 mV
D Albano, F Crupi, F Cucchi, G Iannaccone
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 23 (8á…, 2014
462014
Modeling of tunnelling currents in Hf-based gate stacks as a function of temperature and extraction of material parameters
A Campera, G Iannaccone, F Crupi
IEEE transactions on electron devices 54 (1), 83-89, 2006
452006
Positive bias temperature instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics
F Crupi, C Pace, G Cocorullo, G Groeseneken, M Aoulaiche, M Houssa
Microelectronic Engineering 80, 130-133, 2005
452005
Softening of breakdown in ultra-thin gate oxide nMOSFETs at low inversion layer density
S Lombardo, F Crupi, JH Stathis
2001 IEEE International Reliability Physics Symposium Proceedings. 39thá…, 2001
442001
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