| Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospects J Müller, P Polakowski, S Mueller, T Mikolajick ECS Journal of Solid State Science and Technology 4 (5), N30, 2015 | 480 | 2015 |
| A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ... 2017 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2017 | 455 | 2017 |
| Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories J Müller, TS Böscke, S Müller, E Yurchuk, P Polakowski, J Paul, D Martin, ... 2013 IEEE International Electron Devices Meeting, 10.8. 1-10.8. 4, 2013 | 446 | 2013 |
| Ferroelectricity in undoped hafnium oxide P Polakowski, J Müller Applied Physics Letters 106 (23), 2015 | 397 | 2015 |
| Impact of different dopants on the switching properties of ferroelectric hafniumoxide U Schroeder, E Yurchuk, J Müller, D Martin, T Schenk, P Polakowski, ... Japanese Journal of Applied Physics 53 (8S1), 08LE02, 2014 | 378 | 2014 |
| A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ... 2016 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2016 | 357 | 2016 |
| Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG J Müller, E Yurchuk, T Schlösser, J Paul, R Hoffmann, S Müller, D Martin, ... 2012 symposium on VLSI technology (VLSIT), 25-26, 2012 | 295 | 2012 |
| Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors H Mulaosmanovic, J Ocker, S Müller, U Schroeder, J Müller, ... ACS applied materials & interfaces 9 (4), 3792-3798, 2017 | 292 | 2017 |
| 14nm ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications Z Krivokapic, U Rana, R Galatage, A Razavieh, A Aziz, J Liu, J Shi, ... 2017 IEEE International Electron Devices Meeting (IEDM), 15.1. 1-15.1. 4, 2017 | 245 | 2017 |
| Novel ferroelectric FET based synapse for neuromorphic systems H Mulaosmanovic, J Ocker, S Müller, M Noack, J Müller, P Polakowski, ... 2017 Symposium on VLSI Technology, T176-T177, 2017 | 243 | 2017 |
| High endurance ferroelectric hafnium oxide-based FeFET memory without retention penalty T Ali, P Polakowski, S Riedel, T Büttner, T Kämpfe, M Rudolph, B Pätzold, ... IEEE Transactions on Electron Devices 65 (9), 3769-3774, 2018 | 227 | 2018 |
| Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells H Mulaosmanovic, S Slesazeck, J Ocker, M Pesic, S Muller, S Flachowsky, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.8. 1-26.8. 3, 2015 | 138 | 2015 |
| Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics T Ali, P Polakowski, S Riedel, T Büttner, T Kämpfe, M Rudolph, B Pätzold, ... Applied Physics Letters 112 (22), 2018 | 125 | 2018 |
| Ferroelectric deep trench capacitors based on Al:HfO2 for 3D nonvolatile memory applications P Polakowski, S Riedel, W Weinreich, M Rudolf, J Sundqvist, K Seidel, ... 2014 IEEE 6th International Memory Workshop (IMW), 1-4, 2014 | 118 | 2014 |
| A multilevel FeFET memory device based on laminated HSO and HZO ferroelectric layers for high-density storage T Ali, P Polakowski, K Kühnel, M Czernohorsky, T Kämpfe, M Rudolph, ... 2019 IEEE International Electron Devices Meeting (IEDM), 28.7. 1-28.7. 4, 2019 | 104 | 2019 |
| Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD M Lederer, T Kämpfe, R Olivo, D Lehninger, C Mart, S Kirbach, T Ali, ... Applied Physics Letters 115 (22), 2019 | 102 | 2019 |
| High endurance strategies for hafnium oxide based ferroelectric field effect transistor J Muller, P Polakowski, S Muller, H Mulaosmanovic, J Ocker, T Mikolajick, ... 2016 16th non-volatile memory technology symposium (NVMTS), 1-7, 2016 | 93 | 2016 |
| A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide S Riedel, P Polakowski, J Müller Aip Advances 6 (9), 2016 | 88 | 2016 |
| Doped hafnium oxide–an enabler for ferroelectric field effect transistors T Mikolajick, S Müller, T Schenk, E Yurchuk, S Slesazeck, U Schröder, ... Advances in Science and Technology 95, 136-145, 2014 | 73 | 2014 |
| Semiconductor device with ferroelectric hafnium oxide and method for forming semiconductor device J Mueller, DH Triyoso, R Binder, J Metzger, P Polakowski US Patent 9,269,785, 2016 | 41 | 2016 |
Thomas MikolajickScientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU DresdenBestätigte E-Mail-Adresse bei namlab.com
