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Ruben Seisyan
Ruben Seisyan
ФТИ им. А.Ф.Иоффе, лаборатория квантоворазмерных гетероструктур
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Titel
Zitiert von
Zitiert von
Jahr
Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap
VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ...
physica status solidi (b) 229 (3), r1-r3, 2002
13792002
Tamm plasmon polaritons: Slow and spatially compact light
ME Sasin, RP Seisyan, MA Kalitteevski, S Brand, RA Abram, ...
Applied physics letters 92 (25), 251112, 2008
3612008
Nanolithography in microelectronics: A review
RP Seisyan
Technical Physics 56 (8), 1061-1073, 2011
1302011
Phys. Status Solidi B https://doi. org/10.1002/1521-3951 (200202) 229: 3< R1:: AID-PSSB99991> 3.0. CO; 2-O 229
VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ...
R1, 2002
1192002
RETRACTED: Tamm plasmon-polaritons: First experimental observation
ME Sasin, RP Seisyan, MA Kaliteevski, S Brand, RA Abram, ...
Superlattices and Microstructures 47 (1), 44-49, 2010
982010
Спектроскопия диамагнитных экситонов
РП Сейсян
Наука. Гл. ред. физ.-мат. лит., 1984
671984
Exciton-polariton light absorption in bulk GaAs and semiconductor superlattices
VA Kosobukin, RP Seisyan, SA Vaganov
Semiconductor science and technology 8 (7), 1235, 1993
551993
Spectroscopy of Diamagnetic Excitons
RP Seisyan
Science, Moscow, 1984
531984
Нанолитография в микроэлектронике (Обзор)
РП Сейсян
Журнал технической физики 81 (8), 1-14, 2011
432011
Нанолитография СБИС в экстремально дальнем вакуумном ультрафиолете (обзор
Р Сейсян
Журнал технической физики 75 (5), 1-13, 2005
432005
Absorption and emission of hexagonal InN. evidence of narrow fundamental band
V Yu Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ...
Gap Phys Status Solidi (b) 229, R1, 2002
382002
Exciton in a semiconductor quantum well subjected to a strong magnetic field
AV KRAVOKIN, AI Nesvizhskii, RP Seisyan
Semiconductors (Woodbury, NY) 27 (6), 530-536, 1993
381993
Extreme ultraviolet nanolithography for ULSI: A review
RP Seisyan
Technical physics 50 (5), 535-545, 2005
352005
Semiconductor laser with extremely low divergence of radiation
ZI Alferov, SA Gurevich, RF Kazarinov, MN Mizerov, EL Portnoi
Sov. Phys. Semiconductor 8, 541, 1974
311974
Diamagnetic excitons and exciton magnetopolaritons in semiconductors
RP Seisyan
Semiconductor Science and Technology 27 (5), 053001, 2012
252012
Observation of the Exciton Structure of the Fundamental Absorption Edge of InAs Crystals
AV Varfolomeev, RP Seisyan, RN Yakimova
Soviet Physics-Semiconductors 9 (4), 530, 1975
251975
High-temperature effectiveness limit of exciton-polariton processes in cadmium and zinc telluride crystals
GN Aliev, OS Koshchug, RP Seisyan
Physics of the Solid State 36 (2), 203-211, 1994
241994
Structure of the absorption edge of cubic cadmium and zinc chalcogenides
GN Aliev, NP Gavaleshko, OS Koshchug, VI Pleshko, RP Selsyan
Fiz. Tverd. Tela (St. Petersburg) 34, 2400-2406, 1992
241992
Two-dimensional photonic crystal fabrication using fullerene films
ME Gaevski, SO Kognovitskii, SG Konnikov, AV Nashchekin, SI Nesterov, ...
Nanotechnology 11 (4), 270, 2000
222000
Exciton‐Polariton Behaviour of the Absorption Edge of Thin GaAs Crystals with the “Super‐Quantum” Thickness and MQW Enlarged Barriers
GN Aliev, NV Lukyanova, RP Seisyan, MR Vladimirova, H Gibbs, ...
physica status solidi (a) 164 (1), 193-197, 1997
221997
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