Spyros Stathopoulos
Spyros Stathopoulos
Sr Experimental Officer - University of Edinburgh
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Zitiert von
Zitiert von
Multibit memory operation of metal-oxide bi-layer memristors
S Stathopoulos, A Khiat, M Trapatseli, S Cortese, A Serb, I Valov, ...
Scientific Reports 7, 17532, 2017
A data-driven verilog-a reram model
I Messaris, A Serb, S Stathopoulos, A Khiat, S Nikolaidis, T Prodromakis
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2018
Low-Power and Highly Uniform 3-b Multilevel Switching in Forming Free TiO2–x-Based RRAM With Embedded Pt Nanocrystals
P Bousoulas, S Stathopoulos, D Tsialoukis, D Tsoukalas
IEEE Electron Device Letters 37 (7), 874-877, 2016
Engineering amorphous-crystalline interfaces in TiO2−x/TiO2−y-based bilayer structures for enhanced resistive switching and synaptic properties
P Bousoulas, P Asenov, I Karageorgiou, D Sakellaropoulos, ...
Journal of Applied Physics 120 (15), 154501, 2016
Conduction mechanisms at distinct resistive levels of Pt/TiO2-x/Pt memristors
L Michalas, S Stathopoulos, A Khiat, T Prodromakis
Applied Physics Letters 113 (14), 2018
Flexible polyimide chemical sensors using platinum nanoparticles
E Skotadis, D Mousadakos, K Katsabrokou, S Stathopoulos, D Tsoukalas
Sensors and Actuators B: Chemical 189, 106-112, 2013
PHEMA functionalization of gold nanoparticles for vapor sensing: Chemi-resistance, chemi-capacitance and chemi-impedance
J Tang, E Skotadis, S Stathopoulos, V Roussi, V Tsouti, D Tsoukalas
Sensors and Actuators B: chemical 170, 129-136, 2012
Millisecond non-melt laser annealing of phosphorus implanted germanium: Influence of nitrogen co-doping
S Stathopoulos, L Tsetseris, N Pradhan, B Colombeau, D Tsoukalas
Journal of Applied Physics 118 (13), 2015
Electrical characteristics of interfacial barriers at metal—TiO2 contacts
L Michalas, A Khiat, S Stathopoulos, T Prodromakis
Journal of Physics D: Applied Physics 51 (42), 425101, 2018
An electrical characterisation methodology for benchmarking memristive device technologies
S Stathopoulos, L Michalas, A Khiat, A Serb, T Prodromakis
Scientific reports 9 (1), 19412, 2019
A memristive switching uncertainty model
S Stathopoulos, A Serb, A Khiat, M Ogorzałek, T Prodromakis
IEEE Transactions on electron devices 66 (7), 2946-2953, 2019
A TiO2 ReRAM parameter extraction method
I Messaris, S Nikolaidis, A Serb, S Stathopoulos, I Gupta, A Khiat, ...
2017 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4, 2017
Chemical sensing based on double layer PHEMA polymer and platinum nanoparticle films
E Skotadis, JL Tanner, S Stathopoulos, V Tsouti, D Tsoukalas
Sensors and Actuators B: Chemical 175, 85-91, 2012
Interface Asymmetry Induced by Symmetric Electrodes on Metal-Al: TiOx-Metal Structures
L Michalas, M Trapatseli, S Stathopoulos, S Cortese, A Khiat, ...
IEEE Transactions on Nanotechnology, 2017
Coexistence of bipolar and threshold resistive switching in TiO2 based structure with embedded hafnium nanoparticles
I Michelakaki, P Bousoulas, S Stathopoulos, N Boukos, D Tsoukalas
Journal of Physics D: Applied Physics 50 (4), 045103, 2016
Multi-state memristors and their applications: An overview
C Wang, Z Si, X Jiang, A Malik, Y Pan, S Stathopoulos, A Serb, S Wang, ...
IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2022
CO₂ Laser Annealing for USJ Formation in Silicon: Comparison of Simulation and Experiment
S Stathopoulos, A Florakis, G Tzortzis, T Laspas, A Triantafyllopoulos, ...
IEEE Transactions on Electron Devices 61 (3), 696-701, 2014
Metal oxide-enabled reconfigurable memristive threshold logic gates
G Papandroulidakis, A Khiat, A Serb, S Stathopoulos, L Michalas, ...
2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2018
Design flow for hybrid cmos/memristor systems—part i: Modeling and verification steps
S Maheshwari, S Stathopoulos, J Wang, A Serb, Y Pan, A Mifsud, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 68 (12), 4862-4875, 2021
Bidirectional volatile signatures of metal–oxide memristors—Part I: Characterization
C Giotis, A Serb, S Stathopoulos, L Michalas, A Khiat, T Prodromakis
IEEE Transactions on Electron Devices 67 (11), 5158-5165, 2020
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