Multibit memory operation of metal-oxide bi-layer memristors S Stathopoulos, A Khiat, M Trapatseli, S Cortese, A Serb, I Valov, ... Scientific Reports 7, 17532, 2017 | 278 | 2017 |
A data-driven verilog-a reram model I Messaris, A Serb, S Stathopoulos, A Khiat, S Nikolaidis, T Prodromakis IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2018 | 91 | 2018 |
Low-Power and Highly Uniform 3-b Multilevel Switching in Forming Free TiO2–x-Based RRAM With Embedded Pt Nanocrystals P Bousoulas, S Stathopoulos, D Tsialoukis, D Tsoukalas IEEE Electron Device Letters 37 (7), 874-877, 2016 | 63 | 2016 |
Engineering amorphous-crystalline interfaces in TiO2−x/TiO2−y-based bilayer structures for enhanced resistive switching and synaptic properties P Bousoulas, P Asenov, I Karageorgiou, D Sakellaropoulos, ... Journal of Applied Physics 120 (15), 154501, 2016 | 42 | 2016 |
Conduction mechanisms at distinct resistive levels of Pt/TiO2-x/Pt memristors L Michalas, S Stathopoulos, A Khiat, T Prodromakis Applied Physics Letters 113 (14), 2018 | 32 | 2018 |
Flexible polyimide chemical sensors using platinum nanoparticles E Skotadis, D Mousadakos, K Katsabrokou, S Stathopoulos, D Tsoukalas Sensors and Actuators B: Chemical 189, 106-112, 2013 | 32 | 2013 |
PHEMA functionalization of gold nanoparticles for vapor sensing: Chemi-resistance, chemi-capacitance and chemi-impedance J Tang, E Skotadis, S Stathopoulos, V Roussi, V Tsouti, D Tsoukalas Sensors and Actuators B: chemical 170, 129-136, 2012 | 27 | 2012 |
Millisecond non-melt laser annealing of phosphorus implanted germanium: Influence of nitrogen co-doping S Stathopoulos, L Tsetseris, N Pradhan, B Colombeau, D Tsoukalas Journal of Applied Physics 118 (13), 2015 | 25 | 2015 |
Electrical characteristics of interfacial barriers at metal—TiO2 contacts L Michalas, A Khiat, S Stathopoulos, T Prodromakis Journal of Physics D: Applied Physics 51 (42), 425101, 2018 | 24 | 2018 |
An electrical characterisation methodology for benchmarking memristive device technologies S Stathopoulos, L Michalas, A Khiat, A Serb, T Prodromakis Scientific reports 9 (1), 19412, 2019 | 20 | 2019 |
A memristive switching uncertainty model S Stathopoulos, A Serb, A Khiat, M Ogorzałek, T Prodromakis IEEE Transactions on electron devices 66 (7), 2946-2953, 2019 | 20 | 2019 |
A TiO2 ReRAM parameter extraction method I Messaris, S Nikolaidis, A Serb, S Stathopoulos, I Gupta, A Khiat, ... 2017 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4, 2017 | 19 | 2017 |
Chemical sensing based on double layer PHEMA polymer and platinum nanoparticle films E Skotadis, JL Tanner, S Stathopoulos, V Tsouti, D Tsoukalas Sensors and Actuators B: Chemical 175, 85-91, 2012 | 19 | 2012 |
Interface Asymmetry Induced by Symmetric Electrodes on Metal-Al: TiOx-Metal Structures L Michalas, M Trapatseli, S Stathopoulos, S Cortese, A Khiat, ... IEEE Transactions on Nanotechnology, 2017 | 16 | 2017 |
Coexistence of bipolar and threshold resistive switching in TiO2 based structure with embedded hafnium nanoparticles I Michelakaki, P Bousoulas, S Stathopoulos, N Boukos, D Tsoukalas Journal of Physics D: Applied Physics 50 (4), 045103, 2016 | 14 | 2016 |
Multi-state memristors and their applications: An overview C Wang, Z Si, X Jiang, A Malik, Y Pan, S Stathopoulos, A Serb, S Wang, ... IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2022 | 12 | 2022 |
CO₂ Laser Annealing for USJ Formation in Silicon: Comparison of Simulation and Experiment S Stathopoulos, A Florakis, G Tzortzis, T Laspas, A Triantafyllopoulos, ... IEEE Transactions on Electron Devices 61 (3), 696-701, 2014 | 11 | 2014 |
Metal oxide-enabled reconfigurable memristive threshold logic gates G Papandroulidakis, A Khiat, A Serb, S Stathopoulos, L Michalas, ... 2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2018 | 10 | 2018 |
Design flow for hybrid cmos/memristor systems—part i: Modeling and verification steps S Maheshwari, S Stathopoulos, J Wang, A Serb, Y Pan, A Mifsud, ... IEEE Transactions on Circuits and Systems I: Regular Papers 68 (12), 4862-4875, 2021 | 9 | 2021 |
Bidirectional volatile signatures of metal–oxide memristors—Part I: Characterization C Giotis, A Serb, S Stathopoulos, L Michalas, A Khiat, T Prodromakis IEEE Transactions on Electron Devices 67 (11), 5158-5165, 2020 | 9 | 2020 |