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Bernard GIL
Bernard GIL
CNRS university Montpellier
Bestätigte E-Mail-Adresse bei umontpellier.fr
Titel
Zitiert von
Zitiert von
Jahr
Hexagonal boron nitride is an indirect bandgap semiconductor
G Cassabois, P Valvin, B Gil
Nature photonics 10 (4), 262-266, 2016
9012016
Group III nitride semiconductor compounds: physics and applications
B Gil
Clarendon Press, 1998
5621998
Quantum confined Stark effect due to built-in internal polarization fields in (Al, Ga) N/GaN quantum wells
M Leroux, N Grandjean, M Laügt, J Massies, B Gil, P Lefebvre, ...
Physical Review B 58 (20), R13371, 1998
4581998
ZnO as a material mostly adapted for the realization of room-temperature polariton lasers
M Zamfirescu, A Kavokin, B Gil, G Malpuech, M Kaliteevski
Physical Review B 65 (16), 161205, 2002
4392002
Photonics with hexagonal boron nitride
JD Caldwell, I Aharonovich, G Cassabois, JH Edgar, B Gil, DN Basov
Nature Reviews Materials 4 (8), 552-567, 2019
4242019
Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry
B Gil, O Briot, RL Aulombard
Physical Review B 52 (24), R17028, 1995
3811995
High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
P Lefebvre, A Morel, M Gallart, T Taliercio, J Allègre, B Gil, H Mathieu, ...
Applied Physics Letters 78 (9), 1252-1254, 2001
3072001
Barrier-width dependence of group-III nitrides quantum-well transition energies
M Leroux, N Grandjean, J Massies, B Gil, P Lefebvre, P Bigenwald
Physical Review B 60 (3), 1496, 1999
2561999
Internal electric field in wurtzite quantum wells
C Morhain, T Bretagnon, P Lefebvre, X Tang, P Valvin, T Guillet, B Gil, ...
Physical Review B 72 (24), 241305, 2005
2382005
Raman determination of the phonon deformation potentials in α-GaN
F Demangeot, J Frandon, MA Renucci, O Briot, B Gil, RL Aulombard
Materials Research Society Internet Journal of Nitride Semiconductor Research 1, 1996
2331996
Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl) N quantum wells
P Lefebvre, J Allègre, B Gil, H Mathieu, N Grandjean, M Leroux, J Massies, ...
Physical Review B 59 (23), 15363, 1999
1821999
Efficient single photon emission from a high-purity hexagonal boron nitride crystal
LJ Martínez, T Pelini, V Waselowski, JR Maze, B Gil, G Cassabois, ...
Physical review B 94 (12), 121405, 2016
1702016
Optical properties of GaN epilayers on sapphire
M Tchounkeu, O Briot, B Gil, JP Alexis, RL Aulombard
Journal of applied physics 80 (9), 5352-5360, 1996
1601996
Direct band-gap crossover in epitaxial monolayer boron nitride
C Elias, P Valvin, T Pelini, A Summerfield, CJ Mellor, TS Cheng, L Eaves, ...
Nature communications 10 (1), 1-7, 2019
1552019
Photon Bloch oscillations in porous silicon optical superlattices
V Agarwal, JA Del Río, G Malpuech, M Zamfirescu, A Kavokin, D Coquillat, ...
Physical review letters 92 (9), 097401, 2004
1522004
Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors
H Morkoç, R Cingolani, B Gil
Solid-State Electronics 43 (10), 1909-1927, 1999
1461999
Radiative lifetime of a single electron-hole pair in quantum dots
T Bretagnon, P Lefebvre, P Valvin, R Bardoux, T Guillet, T Taliercio, B Gil, ...
Physical Review B 73 (11), 113304, 2006
1442006
Giant exciton-light coupling in ZnO quantum dots
B Gil, AV Kavokin
Applied Physics Letters 81 (4), 748-750, 2002
1382002
Polariton lasing in a hybrid bulk ZnO microcavity
T Guillet, M Mexis, J Levrat, G Rossbach, C Brimont, T Bretagnon, B Gil, ...
Applied Physics Letters 99 (16), 161104, 2011
1362011
Oscillator strengths of A, B, and C excitons in ZnO films
B Gil
Physical Review B 64 (20), 201310, 2001
1292001
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