Noel Rodriguez
Zitiert von
Zitiert von
A-RAM: Novel capacitor-less DRAM memory
N Rodriguez, S Cristoloveanu, F Gamiz
2009 IEEE International SOI Conference, 1-2, 2009
Novel capacitorless 1T-DRAM cell for 22-nm node compatible with bulk and SOI substrates
N Rodriguez, S Cristoloveanu, F Gamiz
IEEE Transactions on electron devices 58 (8), 2371-2377, 2011
Flexible and robust laser-induced graphene heaters photothermally scribed on bare polyimide substrates
MR Bobinger, FJ Romero, A Salinas-Castillo, M Becherer, P Lugli, ...
Carbon 144, 116-126, 2019
A-RAM memory cell: Concept and operation
N Rodriguez, F Gamiz, S Cristoloveanu
IEEE electron device letters 31 (9), 972-974, 2010
Experimental demonstration of capacitorless A2RAM cells on silicon-on-insulator
N Rodriguez, C Navarro, F Gamiz, F Andrieu, O Faynot, S Cristoloveanu
IEEE Electron Device Letters 33 (12), 1717-1719, 2012
Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers
L Donetti, F Gámiz, N Rodriguez, F Jimenez, C Sampedro
Applied physics letters 88 (12), 122108, 2006
An Analytical Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
JB Roldan, F Gamiz, F Jiménez-Molinos, C Sampedro, A Godoy, ...
IEEE transactions on electron devices 57 (11), 2925-2933, 2010
Revisited pseudo-MOSFET models for the characterization of ultrathin SOI wafers
N Rodriguez, S Cristoloveanu, F Gamiz
IEEE transactions on electron devices 56 (7), 1507-1515, 2009
In-depth study of laser diode ablation of kapton polyimide for flexible conductive substrates
FJ Romero, A Salinas-Castillo, A Rivadeneyra, A Albrecht, A Godoy, ...
Nanomaterials 8 (7), 517, 2018
Why the universal mobility is not
S Cristoloveanu, N Rodriguez, F Gamiz
IEEE Transactions on Electron Devices 57 (6), 1327-1333, 2010
Extended Analysis of the -FET: Operation as Capacitorless eDRAM
C Navarro, J Lacord, MS Parihar, F Adamu-Lema, M Duan, N Rodriguez, ...
IEEE Transactions on Electron Devices 64 (11), 4486-4491, 2017
Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond
C Sampedro, F Gámiz, A Godoy, R Valín, A García-Loureiro, N Rodríguez, ...
Solid-State Electronics 65, 88-93, 2011
Simulation of hole mobility in two-dimensional systems
L Donetti, F Gamiz, N Rodriguez
Semiconductor science and technology 24 (3), 035016, 2009
Modeling of inversion layer centroid and polysilicon depletion effects on ultrathin-gate-oxide MOSFET behavior: The influence of crystallographic orientation
N Rodriguez, F Gamiz, JB Roldan
IEEE transactions on electron devices 54 (4), 723-732, 2007
Design, fabrication and characterization of capacitive humidity sensors based on emerging flexible technologies
FJ Romero, A Rivadeneyra, A Salinas-Castillo, A Ohata, DP Morales, ...
Sensors and Actuators B: Chemical 287, 459-467, 2019
Laser-Fabricated reduced graphene oxide memristors
FJ Romero, A Toral-Lopez, A Ohata, DP Morales, FG Ruiz, A Godoy, ...
Nanomaterials 9 (6), 897, 2019
Evidence for mobility enhancement in double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors
N Rodriguez, S Cristoloveanu, F Gamiz
Journal of Applied Physics 102 (8), 083712, 2007
Hole transport in DGSOI devices: Orientation and silicon thickness effects
L Donetti, F Gámiz, N Rodrı, F Jiménez-Molinos, JB Roldán
Solid-state electronics 54 (2), 191-195, 2010
Hole mobility in ultrathin double-gate SOI devices: the effect of acoustic phonon confinement
L Donetti, F Gamiz, N Rodriguez, A Godoy
IEEE electron device letters 30 (12), 1338-1340, 2009
Voltammetric determination of Imatinib (Gleevec) and its main metabolite using square-wave and adsorptive stripping square-wave techniques in urine samples
J Rodriguez, JJ Berzas, G Castaneda, N Rodriguez
Talanta 66 (1), 202-209, 2005
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20