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Advanced Materials 30 (24), 1705963, 2018
244 2018 Polarization and thickness dependent absorption properties of black phosphorus: new saturable absorber for ultrafast pulse generation D Li, H Jussila, L Karvonen, G Ye, H Lipsanen, X Chen, Z Sun
Scientific reports 5 (1), 1-9, 2015
243 2015 Luminescence from excited states in strain-induced As quantum dots H Lipsanen, M Sopanen, J Ahopelto
Physical Review B 51 (19), 13868, 1995
226 1995 Crystal-structure-dependent photoluminescence from InP nanowires M Mattila, T Hakkarainen, M Mulot, H Lipsanen
Nanotechnology 17 (6), 1580, 2006
171 2006 Ultra-strong nonlinear optical processes and trigonal warping in MoS 2 layers A Säynätjoki, L Karvonen, H Rostami, A Autere, S Mehravar, A Lombardo, ...
Nature communications 8 (1), 1-8, 2017
157 * 2017 Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects S Grosse, JHH Sandmann, G Von Plessen, J Feldmann, H Lipsanen, ...
Physical Review B 55 (7), 4473, 1997
145 1997 Dispersion engineering of photonic crystal waveguides with ring-shaped holes A Säynätjoki, M Mulot, J Ahopelto, H Lipsanen
Optics Express 15 (13), 8323-8328, 2007
141 2007 Zeeman effect in parabolic quantum dots R Rinaldi, PV Giugno, R Cingolani, H Lipsanen, M Sopanen, J Tulkki, ...
Physical review letters 77 (2), 342, 1996
136 1996 Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion OME Ylivaara, X Liu, L Kilpi, J Lyytinen, D Schneider, M Laitinen, J Julin, ...
Thin Solid Films 552, 124-135, 2014
135 2014 A single-pixel wireless contact lens display AR Lingley, M Ali, Y Liao, R Mirjalili, M Klonner, M Sopanen, S Suihkonen, ...
Journal of Micromechanics and Microengineering 21 (12), 125014, 2011
125 2011 Properties of AlN grown by plasma enhanced atomic layer deposition M Bosund, T Sajavaara, M Laitinen, T Huhtio, M Putkonen, VM Airaksinen, ...
Applied Surface Science 257 (17), 7827-7830, 2011
123 2011 Strain‐induced quantum dots by self‐organized stressors M Sopanen, H Lipsanen, J Ahopelto
Applied physics letters 66 (18), 2364-2366, 1995
119 1995 Catalyst-free growth of In (As) P nanowires on silicon M Mattila, T Hakkarainen, H Lipsanen, H Jiang, EI Kauppinen
Applied physics letters 89 (6), 063119, 2006
111 2006 High quality GaAs nanowires grown on glass substrates V Dhaka, T Haggren, H Jussila, H Jiang, E Kauppinen, T Huhtio, ...
Nano letters 12 (4), 1912-1918, 2012
102 2012 Observation of defect complexes containing Ga vacancies in GaAsN J Toivonen, T Hakkarainen, M Sopanen, H Lipsanen, J Oila, K Saarinen
Applied physics letters 82 (1), 40-42, 2003
98 2003 Self‐organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy M Sopanen, H Lipsanen, J Ahopelto
Applied physics letters 67 (25), 3768-3770, 1995
92 1995 Temperature dependence of carrier relaxation in strain-induced quantum dots M Brasken, M Lindberg, M Sopanen, H Lipsanen, J Tulkki
Physical Review B 58 (24), R15993, 1998
88 1998 Rapid visualization of grain boundaries in monolayer MoS 2 by multiphoton microscopy L Karvonen, A Säynätjoki, MJ Huttunen, A Autere, B Amirsolaimani, S Li, ...
Nature communications 8 (1), 1-8, 2017
87 2017 Investigation of second-and third-harmonic generation in few-layer gallium selenide by multiphoton microscopy L Karvonen, A Säynätjoki, S Mehravar, RD Rodriguez, S Hartmann, ...
Scientific reports 5, 10334, 2015
74 2015 Tunable graphene–GaSe dual heterojunction device W Kim, C Li, FA Chaves, D Jiménez, RD Rodriguez, J Susoma, ...
Advanced Materials 28 (9), 1845-1852, 2016
71 2016