Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ...
ACS nano 15 (11), 17214-17231, 2021
149 2021 Interfacial metal–oxide interactions in resistive switching memories DY Cho, M Luebben, S Wiefels, KS Lee, I Valov
ACS applied materials & interfaces 9 (22), 19287-19295, 2017
117 2017 Processes and Effects of Oxygen and Moisture in Resistively Switching TaOx and HfOx M Lübben, S Wiefels, R Waser, I Valov
Advanced electronic materials 4 (1), 1700458, 2018
114 2018 HRS instability in oxide-based bipolar resistive switching cells S Wiefels, C Bengel, N Kopperberg, K Zhang, R Waser, S Menzel
IEEE transactions on electron devices 67 (10), 4208-4215, 2020
39 2020 Impact of the ohmic electrode on the endurance of oxide-based resistive switching memory S Wiefels, M Von Witzleben, M Hüttemann, U Böttger, R Waser, S Menzel
IEEE transactions on electron devices 68 (3), 1024-1030, 2021
33 2021 Comprehensive model for the electronic transport in analog memristive devices C Funck, C Bäumer, S Wiefels, T Hennen, R Waser, S Hoffmann-Eifert, ...
Physical Review B 102 (3), 035307, 2020
25 2020 A consistent model for short-term instability and long-term retention in filamentary oxide-based memristive devices N Kopperberg, S Wiefels, S Liberda, R Waser, S Menzel
ACS Applied Materials & Interfaces 13 (48), 58066-58075, 2021
23 2021 Intrinsic RESET speed limit of valence change memories M von Witzleben, S Wiefels, A Kindsmüller, P Stasner, F Berg, ...
ACS Applied Electronic Materials 3 (12), 5563-5572, 2021
22 2021 Reliability aspects of binary vector-matrix-multiplications using ReRAM devices C Bengel, J Mohr, S Wiefels, A Singh, A Gebregiorgis, R Bishnoi, ...
Neuromorphic computing and engineering 2 (3), 034001, 2022
20 2022 A voltage-controlled, oscillation-based adc design for computation-in-memory architectures using emerging rerams M Mayahinia, A Singh, C Bengel, S Wiefels, MA Lebdeh, S Menzel, ...
ACM Journal on Emerging Technologies in Computing Systems (JETC) 18 (2), 1-25, 2022
15 2022 Effect of electron conduction on the read noise characteristics in ReRAM devices K Schnieders, C Funck, F Cüppers, S Aussen, T Kempen, ...
APL Materials 10 (10), 2022
9 2022 Statistical Modeling and Understanding of HRS Retention in 2.5 Mb HfO2 based ReRAM S Wiefels, U Böttger, S Menzel, DJ Wouters, R Waser
2020 IEEE International Memory Workshop (IMW), 1-4, 2020
9 2020 Endurance of 2 Mbit based BEOL integrated ReRAM N Kopperberg, S Wiefels, K Hofmann, J Otterstedt, DJ Wouters, R Waser, ...
IEEE Access 10, 122696-122705, 2022
8 2022 Reliability aspects in resistively switching valence change memory cells S Wiefels
Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2021, 2021
7 2021 Tailor-made synaptic dynamics based on memristive devices C Bengel, K Zhang, J Mohr, T Ziegler, S Wiefels, R Waser, D Wouters, ...
Frontiers in electronic materials 3, 1061269, 2023
6 2023 Memristive devices for time domain compute-in-memory F Freye, J Lou, C Bengel, S Menzel, S Wiefels, T Gemmeke
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 8 …, 2022
6 2022 Empirical Tunneling Model Describing the Retention of 2.5 Mb HfO2 based ReRAM S Wiefels, U Böttger, S Menzel, DJ Wouters, R Waser
2020 International Symposium on VLSI Technology, Systems and Applications …, 2020
5 2020 Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory S Wiefels, N Kopperberg, K Hofmann, J Otterstedt, D Wouters, R Waser, ...
physica status solidi (a), 2300401, 2023
2 2023 Advanced Electrical Characterization of Memristive Arrays for Neuromorphic Applications S Wiefels, X Liu, K Schnieders, M Schumacher, R Waser, L Nielen
2023 IEEE International Conference on Metrology for eXtended Reality …, 2023
1 2023 Reset kinetics of 28 nm integrated ReRAM S Wiefels, N Kopperberg, K Hofmann, J Otterstedt, D Wouters, R Waser, ...
2023 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2023
1 2023