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Martina Heinemann
Martina Heinemann
Lecturer in Physics and Mathematics, Windesheim University of Applied Sciences
Verified email at windesheimflevoland.nl
Title
Cited by
Cited by
Year
Atomic and electronic structures of GaAs (110) and their alkali-adsorption-induced changes
J Hebenstreit, M Heinemann, M Scheffler
Physical review letters 67 (8), 1031, 1991
1131991
A pilot study of the KIBO robot in children with severe ASD
J Albo-Canals, AB Martelo, E Relkin, D Hannon, M Heerink, ...
International Journal of Social Robotics 10, 371-383, 2018
622018
Magnetic structures of hcp bulk gadolinium
M Heinemann, WM Temmerman
Physical Review B 49 (6), 4348, 1994
611994
Young Modulus of Crystalline Polyethylene from ab Initio Molecular Dynamics
JCL Hageman, RJ Meier, M Heinemann, RA De Groot
Macromolecules 30 (19), 5953-5957, 1997
551997
Electronic structure of β-PbO 2 and its relation with BaPbO 3
M Heinemann, HJ Terpstra, C Haas, RA De Groot
Physical Review B 52 (16), 11740, 1995
421995
Microscopic Properties of Thin Films: Learning About Point Defects
A Ourmazd, M Scheffler, M Heinemann, JL Rouviere
MRS Bulletin 17 (12), 24-32, 1992
131992
LSDA calculations for magnetic structures of Gd bulk and the Gd (0001) surface
M Heinemann, WM Temmerman
Surface science 307, 1121-1123, 1994
111994
Formation energies and abundances of intrinsic point defects at the GaAs/AlAs (100) interface
M Heinemann, M Scheffler
Applied surface science 56, 628-631, 1992
71992
Thick sodium overlayers on GaAs (110)
M Heinemann, M Scheffler
Physical Review B 49 (8), 5516, 1994
61994
Aluminum break-point contacts
M Heinemann, RA De Groot
Physical Review B 55 (15), 9375, 1997
41997
Electronic structure of -PbO~ 2 and its relation with BaPbO~ 3
M Heinemann, HJ Terpstra, C Haas, RA De Groot
PHYSICAL REVIEW-SERIES B- 52, 11 740-11 740, 1995
41995
The occupation of the two charge states of EL2 in LEC-grown GaAs-Wafers-a mapping investigation
M Heinemann, BK Meyer, JM Spaeth, K Löhnert
Defect Recognition and Image Processing in III-V Compounds II, 1987
41987
Proceedings of the Twentieth International Conference on the Physics of Semiconductors, Thessaloniki, Greece, 1990
J Hebenstreit, M Heinemann, M Scheffler
World Scientific, Singapore, 1990
21990
FERMI LEVEL PINNING AT A SCHOTTKY BARRIER: Na ON GaAs (110) FROM THE LOW TO THE HIGH COVERAGE REGIME
M Heinemann
Surface Review and Letters 1 (04), 429-433, 1994
1994
The formation of a Schottky barrier: Na on GaAs (110)
M Heinemann, M Scheffler
Formation Of Semiconductor Interfaces-Proceedings Of The 4th International …, 1994
1994
MICROSCOPIC PROPERTIES OF THIN-FILMS-LEARNING ABOUT POINT-DEFECTS (VOL 17, PG 24, 1992)
A OURMAZD, M SCHEFFLER, M HEINEMANN, JL ROUVIERE
MRS BULLETIN 18 (1), 7-7, 1993
1993
Elektronische und atomare Struktur von GaAs/AlAs-Grenzflächen
M Heinemann
TU Berlin, 1991
1991
Calculated Surface Geometries and Electronic Structures for Clean and Sodium Covered GaAs (110) Surfaces
J Hebenstreit, M Heinemann, M Scheffler, JR Hayes, MS Hybertsen, ...
Extended Abstract: Electronic, Optical and Device Properties of Layered …, 1990
1990
Calculated Surface Geometries, Photothresholds, and Schottky-Barrier Heights for Alkalis Adsorbed on GaAs (110)
J Hebenstreit, M Heinemann, M Scheffler, EM Anastassakis, ...
Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20), 215-218, 1990
1990
Is it real? Dealing with an insecure perception of a pet robot in dementia care
M Heinemann, MV Soler, M Heerink
Conference Proceedings New Friends 2015, 0
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