Lasing in direct-bandgap GeSn alloy grown on Si S Wirths, R Geiger, N von den Driesch, G Mussler, T Stoica, S Mantl, ... Nature photonics 9 (2), 88-92, 2015 | 880 | 2015 |

Optically pumped GeSn microdisk lasers on Si D Stange, S Wirths, R Geiger, C Schulte-Braucks, B Marzban, ... ACS photonics 3 (7), 1279-1285, 2016 | 174 | 2016 |

Band engineering and growth of tensile strained Ge/(Si) GeSn heterostructures for tunnel field effect transistors S Wirths, AT Tiedemann, Z Ikonic, P Harrison, B Holländer, T Stoica, ... Applied physics letters 102 (19), 192103, 2013 | 160 | 2013 |

Direct bandgap group IV epitaxy on Si for laser applications N Von den Driesch, D Stange, S Wirths, G Mussler, B Hollander, Z Ikonic, ... Chemistry of Materials 27 (13), 4693-4702, 2015 | 106 | 2015 |

Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown - and -Based Topological Insulators P Olbrich, LE Golub, T Herrmann, SN Danilov, H Plank, VV Bel’kov, ... Physical review letters 113 (9), 096601, 2014 | 100 | 2014 |

Ultrafast photocurrents at the surface of the three-dimensional topological insulator Bi 2 Se 3 L Braun, G Mussler, A Hruban, M Konczykowski, T Schumann, M Wolf, ... Nature communications 7 (1), 1-9, 2016 | 99 | 2016 |

MBE growth optimization of topological insulator Bi2Te3 films J Krumrain, G Mussler, S Borisova, T Stoica, L Plucinski, CM Schneider, ... Journal of crystal growth 324 (1), 115-118, 2011 | 90 | 2011 |

Nat. Photonics 9, 88 (2015) S Wirths, R Geiger, N Von Den Driesch, G Mussler, T Stoica, S Mantl, ... | 75 | 2014 |

GeSn heterojunction LEDs on Si substrates M Oehme, K Kostecki, T Arguirov, G Mussler, K Ye, M Gollhofer, M Schmid, ... IEEE Photonics Technology Letters 26 (2), 187-189, 2013 | 75 | 2013 |

Realization of a vertical topological p–n junction in epitaxial Sb 2 Te 3/Bi 2 Te 3 heterostructures M Eschbach, E Młyńczak, J Kellner, J Kampmeier, M Lanius, E Neumann, ... Nature communications 6 (1), 1-7, 2015 | 73 | 2015 |

Lasing in direct-bandgap GeSn alloy grown on Si Nat S Wirths, R Geiger, N Von Den Driesch, G Mussler, T Stoica, S Mantl, ... Photonics 9 (2), 88-92, 2015 | 73 | 2015 |

Optical Transitions in Direct-Bandgap Ge_{1–x}Sn_{x} AlloysD Stange, S Wirths, N von den Driesch, G Mussler, T Stoica, Z Ikonic, ... ACS Photonics 2 (11), 1539-1545, 2015 | 72 | 2015 |

Reduced pressure CVD growth of Ge and Ge1− xSnx alloys S Wirths, D Buca, G Mussler, AT Tiedemann, B Holländer, P Bernardy, ... ECS Journal of Solid State Science and Technology 2 (5), N99, 2013 | 71 | 2013 |

Tensely strained GeSn alloys as optical gain media S Wirths, Z Ikonic, AT Tiedemann, B Holländer, T Stoica, G Mussler, ... Applied physics letters 103 (19), 192110, 2013 | 68 | 2013 |

Study of GeSn based heterostructures: towards optimized group IV MQW LEDs D Stange, N Von Den Driesch, D Rainko, C Schulte-Braucks, S Wirths, ... Optics express 24 (2), 1358-1367, 2016 | 66 | 2016 |

Photocurrent and transmission spectroscopy of direct-gap interband transitions in quantum wells S Tsujino, H Sigg, G Mussler, D Chrastina, H Von Känel Applied Physics Letters 89 (26), 262119, 2006 | 63 | 2006 |

Mode of Growth of Ultrathin Topological Insulator Bi_{2}Te_{3} Films on Si (111) SubstratesS Borisova, J Krumrain, M Luysberg, G Mussler, D Grützmacher Crystal growth & design 12 (12), 6098-6103, 2012 | 60 | 2012 |

Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys JH Fournier-Lupien, S Mukherjee, S Wirths, E Pippel, N Hayazawa, ... Applied physics letters 103 (26), 263103, 2013 | 57 | 2013 |

Robust surface electronic properties of topological insulators: films grown by molecular beam epitaxy L Plucinski, G Mussler, J Krumrain, A Herdt, S Suga, D Grützmacher, ... Applied physics letters 98 (22), 222503, 2011 | 56 | 2011 |

Photon drag effect in three-dimensional topological insulators H Plank, LE Golub, S Bauer, VV Bel'kov, T Herrmann, P Olbrich, ... Physical Review B 93 (12), 125434, 2016 | 55 | 2016 |