Gregor Mussler
Gregor Mussler
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Lasing in direct-bandgap GeSn alloy grown on Si
S Wirths, R Geiger, N von den Driesch, G Mussler, T Stoica, S Mantl, ...
Nature photonics 9 (2), 88-92, 2015
Optically pumped GeSn microdisk lasers on Si
D Stange, S Wirths, R Geiger, C Schulte-Braucks, B Marzban, ...
ACS photonics 3 (7), 1279-1285, 2016
Band engineering and growth of tensile strained Ge/(Si) GeSn heterostructures for tunnel field effect transistors
S Wirths, AT Tiedemann, Z Ikonic, P Harrison, B Holländer, T Stoica, ...
Applied physics letters 102 (19), 192103, 2013
Direct bandgap group IV epitaxy on Si for laser applications
N Von den Driesch, D Stange, S Wirths, G Mussler, B Hollander, Z Ikonic, ...
Chemistry of Materials 27 (13), 4693-4702, 2015
Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown - and -Based Topological Insulators
P Olbrich, LE Golub, T Herrmann, SN Danilov, H Plank, VV Bel’kov, ...
Physical review letters 113 (9), 096601, 2014
Ultrafast photocurrents at the surface of the three-dimensional topological insulator Bi 2 Se 3
L Braun, G Mussler, A Hruban, M Konczykowski, T Schumann, M Wolf, ...
Nature communications 7 (1), 1-9, 2016
MBE growth optimization of topological insulator Bi2Te3 films
J Krumrain, G Mussler, S Borisova, T Stoica, L Plucinski, CM Schneider, ...
Journal of crystal growth 324 (1), 115-118, 2011
Nat. Photonics 9, 88 (2015)
S Wirths, R Geiger, N Von Den Driesch, G Mussler, T Stoica, S Mantl, ...
GeSn heterojunction LEDs on Si substrates
M Oehme, K Kostecki, T Arguirov, G Mussler, K Ye, M Gollhofer, M Schmid, ...
IEEE Photonics Technology Letters 26 (2), 187-189, 2013
Realization of a vertical topological p–n junction in epitaxial Sb 2 Te 3/Bi 2 Te 3 heterostructures
M Eschbach, E Młyńczak, J Kellner, J Kampmeier, M Lanius, E Neumann, ...
Nature communications 6 (1), 1-7, 2015
Lasing in direct-bandgap GeSn alloy grown on Si Nat
S Wirths, R Geiger, N Von Den Driesch, G Mussler, T Stoica, S Mantl, ...
Photonics 9 (2), 88-92, 2015
Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys
D Stange, S Wirths, N von den Driesch, G Mussler, T Stoica, Z Ikonic, ...
ACS Photonics 2 (11), 1539-1545, 2015
Reduced pressure CVD growth of Ge and Ge1− xSnx alloys
S Wirths, D Buca, G Mussler, AT Tiedemann, B Holländer, P Bernardy, ...
ECS Journal of Solid State Science and Technology 2 (5), N99, 2013
Tensely strained GeSn alloys as optical gain media
S Wirths, Z Ikonic, AT Tiedemann, B Holländer, T Stoica, G Mussler, ...
Applied physics letters 103 (19), 192110, 2013
Study of GeSn based heterostructures: towards optimized group IV MQW LEDs
D Stange, N Von Den Driesch, D Rainko, C Schulte-Braucks, S Wirths, ...
Optics express 24 (2), 1358-1367, 2016
Photocurrent and transmission spectroscopy of direct-gap interband transitions in quantum wells
S Tsujino, H Sigg, G Mussler, D Chrastina, H Von Känel
Applied Physics Letters 89 (26), 262119, 2006
Mode of Growth of Ultrathin Topological Insulator Bi2Te3 Films on Si (111) Substrates
S Borisova, J Krumrain, M Luysberg, G Mussler, D Grützmacher
Crystal growth & design 12 (12), 6098-6103, 2012
Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys
JH Fournier-Lupien, S Mukherjee, S Wirths, E Pippel, N Hayazawa, ...
Applied physics letters 103 (26), 263103, 2013
Robust surface electronic properties of topological insulators: films grown by molecular beam epitaxy
L Plucinski, G Mussler, J Krumrain, A Herdt, S Suga, D Grützmacher, ...
Applied physics letters 98 (22), 222503, 2011
Photon drag effect in three-dimensional topological insulators
H Plank, LE Golub, S Bauer, VV Bel'kov, T Herrmann, P Olbrich, ...
Physical Review B 93 (12), 125434, 2016
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