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Sebastian Brueckner
Sebastian Brueckner
Ferdinand-Braun-Institut Berlin
Verified email at fbh-berlin.de - Homepage
Title
Cited by
Cited by
Year
Anomalous double-layer step formation on Si (100) in hydrogen process ambient
S Brückner, H Döscher, P Kleinschmidt, O Supplie, A Dobrich, ...
Physical Review B 86 (19), 195310, 2012
632012
Time-resolved in situ spectroscopy during formation of the GaP/Si (100) heterointerface
O Supplie, MM May, G Steinbach, O Romanyuk, F Grosse, A Nägelein, ...
The journal of physical chemistry letters 6 (3), 464-469, 2015
512015
Atomic scale analysis of the GaP/Si (100) heterointerface by in situ reflection anisotropy spectroscopy and ab initio density functional theory
O Supplie, S Brückner, O Romanyuk, H Döscher, C Höhn, MM May, ...
Physical Review B 90 (23), 235301, 2014
482014
Surface preparation of Si (1 0 0) by thermal oxide removal in a chemical vapor environment
H Döscher, S Brückner, A Dobrich, C Höhn, P Kleinschmidt, T Hannappel
Journal of Crystal Growth 315 (1), 10-15, 2011
482011
In situ investigation of hydrogen interacting with Si (100)
S Brückner, H Döscher, P Kleinschmidt, T Hannappel
Applied Physics Letters 98 (21), 2011
462011
Indirect in situ characterization of Si (1 0 0) substrates at the initial stage of III–V heteroepitaxy
H Döscher, O Supplie, S Brückner, T Hannappel, A Beyer, J Ohlmann, ...
Journal of Crystal Growth 315 (1), 16-21, 2011
422011
Domain-sensitive in situ observation of layer-by-layer removal at Si (100) in H2 ambient
S Brückner, P Kleinschmidt, O Supplie, H Döscher, T Hannappel
New Journal of Physics 15 (11), 113049, 2013
392013
In situ controlled heteroepitaxy of single-domain GaP on As-modified Si (100)
O Supplie, MM May, P Kleinschmidt, A Nägelein, A Paszuk, S Brückner, ...
Apl Materials 3 (12), 2015
342015
Si (100) surfaces in a hydrogen-based process ambient
H Döscher, A Dobrich, S Brückner, P Kleinschmidt, T Hannappel
Applied Physics Letters 97 (15), 2010
312010
In situ characterization of interfaces relevant for efficient photoinduced reactions
O Supplie, MM May, S Brückner, N Brezhneva, T Hannappel, EV Skorb
Advanced Materials Interfaces 4 (21), 1601118, 2017
292017
Investigation of oxide removal from Si (1 0 0) substrates in dependence of the MOVPE process gas ambient
H Döscher, S Brückner, T Hannappel
Journal of crystal growth 318 (1), 563-569, 2011
272011
MOVPE growth of III-V solar cells on silicon in 300 mm closed coupled showerhead reactor
T Roesener, H Döscher, A Beyer, S Brückner, V Klinger, A Wekkeli, ...
25th European Photovoltaic Solar Energy Conf. and Exhibition, 964-968, 2010
272010
Formation of GaP/Si (100) heterointerfaces in the presence of inherent reactor residuals
O Supplie, MM May, C Höhn, H Stange, A Müller, P Kleinschmidt, ...
ACS applied materials & interfaces 7 (18), 9323-9327, 2015
252015
In situ control of As dimer orientation on Ge (100) surfaces
S Brückner, O Supplie, E Barrigón, J Luczak, P Kleinschmidt, I Rey-Stolle, ...
Applied Physics Letters 101 (12), 2012
242012
Control Over Dimer Orientations on Vicinal Si (100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics
S Brückner, O Supplie, A Dobrich, P Kleinschmidt, T Hannappel
physica status solidi (b) 255 (4), 1700493, 2018
212018
Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si (111) for subsequent III-V nanowire growth
A Paszuk, S Brückner, M Steidl, W Zhao, A Dobrich, O Supplie, ...
Applied Physics Letters 106 (23), 2015
212015
Double-layer stepped Si (1 0 0) surfaces prepared in As-rich CVD ambience
A Paszuk, O Supplie, M Nandy, S Brückner, A Dobrich, P Kleinschmidt, ...
Applied Surface Science 462, 1002-1007, 2018
162018
GaAsP/Si tandem solar cells: In situ study on GaP/Si: As virtual substrate preparation
A Paszuk, O Supplie, B Kim, S Brückner, M Nandy, A Heinisch, ...
Solar Energy Materials and Solar Cells 180, 343-349, 2018
162018
In situ study of Ge (100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient
E Barrigón, S Brückner, O Supplie, H Döscher, I Rey-Stolle, T Hannappel
Journal of crystal growth 370, 173-176, 2013
142013
In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient
A Paszuk, A Dobrich, C Koppka, S Brückner, M Duda, P Kleinschmidt, ...
Journal of Crystal Growth 464, 14-19, 2017
132017
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