| Highly conductive molecular junctions based on direct binding of benzene to platinum electrodes M Kiguchi, O Tal, S Wohlthat, F Pauly, M Krieger, D Djukic, JC Cuevas, ... Physical review letters 101 (4), 046801, 2008 | 354 | 2008 |
| Electron-vibration interaction in single-molecule junctions: From contact to tunneling regimes O Tal, M Krieger, B Leerink, JM Van Ruitenbeek Physical review letters 100 (19), 196804, 2008 | 200 | 2008 |
| Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics S Hertel, D Waldmann, J Jobst, A Albert, M Albrecht, S Reshanov, ... Nature communications 3 (1), 957, 2012 | 147 | 2012 |
| Fabrication and characterization of 3C‐SiC‐based MOSFETs A Schöner, M Krieger, G Pensl, M Abe, H Nagasawa Chemical Vapor Deposition 12 (8‐9), 523-530, 2006 | 140 | 2006 |
| Bottom-gated epitaxial graphene D Waldmann, J Jobst, F Speck, T Seyller, M Krieger, HB Weber Nature Materials 10 (5), 357-360, 2011 | 121 | 2011 |
| 4H‐SiC MISFETs with nitrogen‐containing insulators M Noborio, J Suda, S Beljakowa, M Krieger, T Kimoto physica status solidi (a) 206 (10), 2374-2390, 2009 | 85 | 2009 |
| Elastic constants and Poisson ratio in the system AlAs–GaAs M Krieger, H Sigg, N Herres, K Bachem, K Köhler Applied physics letters 66 (6), 682-684, 1995 | 67 | 1995 |
| SiC material properties G Pensl, F Ciobanu, T Frank, M Krieger, S Reshanov, F Schmid, ... International Journal of High Speed Electronics and Systems 15 (04), 705-745, 2005 | 60 | 2005 |
| Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing M Rühl, C Ott, S Götzinger, M Krieger, HB Weber Applied Physics Letters 113 (12), 2018 | 49 | 2018 |
| Current annealing and electrical breakdown of epitaxial graphene S Hertel, F Kisslinger, J Jobst, D Waldmann, M Krieger, HB Weber Applied Physics Letters 98 (21), 2011 | 48 | 2011 |
| Deep levels induced by reactive ion etching in n-and p-type 4H–SiC K Kawahara, M Krieger, J Suda, T Kimoto Journal of Applied Physics 108 (2), 2010 | 41 | 2010 |
| Stark tuning of the silicon vacancy in silicon carbide M Rühl, L Bergmann, M Krieger, HB Weber Nano Letters 20 (1), 658-663, 2019 | 39 | 2019 |
| An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors M Hauck, J Lehmeyer, G Pobegen, HB Weber, M Krieger Communications Physics 2 (1), 5, 2019 | 29 | 2019 |
| Silicon carbide: recent major advances F Schmid, M Krieger, M Laube, G Pensl, G Wagner, WJ Choyke, ... Advanced Texts in Physics (Springer, Berlin, Heidelberg, 2004), 517-536, 2004 | 28 | 2004 |
| Implantation-induced defects in silicon carbide G Pensl, T Frank, M Krieger, M Laube, S Reshanov, F Schmid, M Weidner Physica B: Condensed Matter 340, 121-127, 2003 | 27 | 2003 |
| Noncovalent functionalization and passivation of black phosphorus with optimized perylene diimides for hybrid field effect transistors V Lloret, E Nuin, M Kohring, S Wild, M Löffler, C Neiss, M Krieger, ... Advanced Materials Interfaces 7 (23), 2001290, 2020 | 25 | 2020 |
| Analysis of interface trap parameters from double‐peak conductance spectra taken on N‐implanted 3C‐SiC MOS capacitors M Krieger, S Beljakowa, L Trapaidze, T Frank, HB Weber, G Pensl, ... physica status solidi (b) 245 (7), 1390-1395, 2008 | 24 | 2008 |
| Defect-engineering in SiC by ion implantation and electron irradiation G Pensl, F Ciobanu, T Frank, D Kirmse, M Krieger, S Reshanov, F Schmid, ... Microelectronic engineering 83 (1), 146-149, 2006 | 23 | 2006 |
| Analysis of compensation effects in aluminum-implanted 4H-SiC devices J Weiße, M Hauck, T Sledziewski, M Tschiesche, M Krieger, AJ Bauer, ... Materials Science Forum 924, 184-187, 2018 | 22 | 2018 |
| Growth of cubic SiC single crystals by the physical vapor transport technique K Semmelroth, M Krieger, G Pensl, H Nagasawa, R Püsche, ... Journal of crystal growth 308 (2), 241-246, 2007 | 22 | 2007 |
