| Green light emitting diodes on a-plane GaN bulk substrates T Detchprohm, M Zhu, Y Li, Y Xia, C Wetzel, EA Preble, L Liu, T Paskova, ... Applied Physics Letters 92 (24), 241109, 2008 | 101 | 2008 |
| Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes J Senawiratne, A Chatterjee, T Detchprohm, W Zhao, Y Li, M Zhu, Y Xia, ... Thin Solid Films 518 (6), 1732-1736, 2010 | 48 | 2010 |
| Junction temperature measurements and thermal modeling of GaInN/GaN quantum well light-emitting diodes J Senawiratne, Y Li, M Zhu, Y Xia, W Zhao, T Detchprohm, A Chatterjee, ... Journal of Electronic Materials 37 (5), 607-610, 2008 | 47 | 2008 |
| Boosting Green GaInN/GaN Light-Emitting Diode Performance by a GaInN Underlying Layer Y Xia, W Hou, L Zhao, M Zhu, T Detchprohm, C Wetzel Electron Devices, IEEE Transactions on 57 (10), 2639-2643, 2010 | 29 | 2010 |
| Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth T Detchprohm, Y Xia, Y Xi, M Zhu, W Zhao, Y Li, EF Schubert, L Liu, ... Journal of crystal growth 298, 272-275, 2007 | 28 | 2007 |
| Enhanced device performance of GaInN‐based deep green light emitting diodes with V‐defect‐free active region T Detchprohm, M Zhu, W Zhao, Y Wang, Y Li, Y Xia, C Wetzel physica status solidi (c) 6 (S2), S840-S843, 2009 | 27 | 2009 |
| Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates T Detchprohm, M Zhu, Y Li, Y Xia, L Liu, D Hanser, C Wetzel Journal of Crystal Growth 311 (10), 2937-2941, 2009 | 22 | 2009 |
| Improved performance of GaInN based deep green light emitting diodes through V‐defect reduction T Detchprohm, M Zhu, Y Xia, Y Li, W Zhao, J Senawiratne, C Wetzel physica status solidi (c) 5 (6), 2207-2209, 2008 | 22 | 2008 |
| Junction temperature analysis in green light emitting diode dies on sapphire and GaN substrates J Senawiratne, W Zhao, T Detchprohm, A Chatterjee, Y Li, M Zhu, Y Xia, ... physica status solidi (c) 5 (6), 2247-2249, 2008 | 20 | 2008 |
| Discrete steps in the capacitance-voltage characteristics of GaInN/GaN light emitting diode structures Y Xia, E Williams, Y Park, I Yilmaz, JM Shah, EF Schubert, C Wetzel MRS Proceedings 831, E3. 38, 2004 | 15 | 2004 |
| Characterization of GaInN/GaN layers for green emitting laser diodes C Wetzel, Y Li, J Senawiratne, M Zhu, Y Xia, S Tomasulo, PD Persans, ... Journal of Crystal Growth 311 (10), 2942-2947, 2009 | 12 | 2009 |
| Temperature dependence of the quantum efficiency in green light emitting diode dies Y Li, W Zhao, Y Xia, M Zhu, J Senawiratne, T Detchprohm, EF Schubert, ... physica status solidi (c) 4 (7), 2784-2787, 2007 | 9 | 2007 |
| Radiation Effects on InGaN Quantum Wells and GaN Simultaneously Probed by Ion Beam-Induced Luminescence JW Tringe, AM Conway, TE Felter, WJM Chan, J Castelaz, V Lordi, Y Xia, ... Nuclear Science, IEEE Transactions on 55 (6), 3633-3637, 2008 | 8 | 2008 |
| Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy M Zhu, Y Xia, W Zhao, Y Li, J Senawiratne, T Detchprohm, C Wetzel Journal of Electronic Materials 37 (5), 641-645, 2008 | 8 | 2008 |
| Depth profile of donor–acceptor pair transition revealing its effect on the efficiency of green LEDs Y Xia, Y Li, T Detchprohm, C Wetzel Physica B: Condensed Matter 404 (23), 4899-4902, 2009 | 5 | 2009 |
| Development of high-power green light emitting diode dies in piezoelectric GaInN/GaN C Wetzel, Y Xia, T Detchprohm, P Li, JS Nelson Proc. SPIE 5739, 1-6, 2005 | 5 | 2005 |
| Green LED development in polar and non-polar growth orientation C Wetzel, M Zhu, Y Li, W Hou, L Zhao, W Zhao, S You, C Stark, Y Xia, ... SPIE Optical Engineering+ Applications, 742204-742204-15, 2009 | 4 | 2009 |
| Green Light Emitting Diodes under Photon Modulation Y Li, J Senawiratne, Y Xia, M Zhu, W Zhao, T Detchprohm, CM Wetzel MRS Proceedings 1040, 1040-Q03-08, 2007 | 4 | 2007 |
| 3-D Simulations on Coulomb Explosions of Hydrogen Atomic Clusters Irradiated by an Intense Femtosecond Laser Pulse Y Xia, J Liu, G Ni CHINESE JOURNAL OF LASERS 31 (8), 922-926, 2004 | 4 | 2004 |
| Photon modulated electroluminescence of GaInN/GaN multiple quantum well light emitting diodes Y Li, J Senawiratne, Y Xia, W Zhao, M Zhu, T Detchprohm, C Wetzel physica status solidi (c) 5 (6), 2293-2295, 2008 | 3 | 2008 |
Christian WetzelRensselaer Polytechnic InstituteBestätigte E-Mail-Adresse bei ieee.org
