Auger recombination in AlGaN quantum wells for UV light-emitting diodes F Nippert, M Tollabi Mazraehno, MJ Davies, MP Hoffmann, HJ Lugauer, ...
Applied Physics Letters 113 (7), 2018
74 2018 Structural, electronic, and optical properties of S Schulz, DP Tanner, EP O'Reilly, MA Caro, TL Martin, PAJ Bagot, ...
Physical Review B 92 (23), 235419, 2015
73 2015 The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem FCP Massabuau, MJ Davies, F Oehler, SK Pamenter, EJ Thrush, ...
Applied Physics Letters 105 (11), 2014
71 2014 High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop MJ Davies, TJ Badcock, P Dawson, MJ Kappers, RA Oliver, ...
Applied Physics Letters 102 (2), 2013
42 2013 The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures MJ Davies, P Dawson, FCP Massabuau, RA Oliver, MJ Kappers, ...
Applied Physics Letters 105 (9), 2014
30 2014 Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology issues C Frankerl, MP Hoffmann, F Nippert, H Wang, C Brandl, N Tillner, ...
Journal of Applied Physics 126 (7), 2019
27 2019 Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures FCP Massabuau, MJ Davies, WE Blenkhorn, S Hammersley, MJ Kappers, ...
physica status solidi (b) 252 (5), 928-935, 2015
25 2015 A study of the inclusion of prelayers in InGaN/GaN single‐and multiple‐quantum‐well structures MJ Davies, P Dawson, FCP Massabuau, AL Fol, RA Oliver, MJ Kappers, ...
physica status solidi (b) 252 (5), 866-872, 2015
25 2015 Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells TJ Badcock, P Dawson, MJ Davies, MJ Kappers, FCP Massabuau, ...
Journal of Applied Physics 115 (11), 2014
23 2014 Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells MJ Davies, P Dawson, S Hammersley, T Zhu, MJ Kappers, CJ Humphreys, ...
Applied Physics Letters 108 (25), 2016
22 2016 Strongly localized carriers in Al-rich AlGaN/AlN single quantum wells grown on sapphire substrates C Frankerl, F Nippert, MP Hoffmann, H Wang, C Brandl, HJ Lugauer, ...
Journal of Applied Physics 127 (9), 2020
18 2020 Point defect‐induced UV‐C absorption in aluminum nitride epitaxial layers grown on sapphire substrates by metal‐organic chemical vapor deposition N Tillner, C Frankerl, F Nippert, MJ Davies, C Brandl, R Lösing, M Mandl, ...
physica status solidi (b) 257 (12), 2000278, 2020
17 2020 A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers MJ Davies, S Hammersley, FCP Massabuau, P Dawson, RA Oliver, ...
Journal of Applied Physics 119 (5), 2016
17 2016 Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures MJ Davies, FCP Massabuau, P Dawson, RA Oliver, MJ Kappers, ...
physica status solidi (c) 11 (3‐4), 710-713, 2014
17 2014 Origin of carrier localization in AlGaN-based quantum well structures and implications for efficiency droop C Frankerl, F Nippert, A Gomez-Iglesias, MP Hoffmann, C Brandl, ...
Applied Physics Letters 117 (10), 2020
14 2020 The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells MJ Davies, P Dawson, FCP Massabuau, F Oehler, RA Oliver, MJ Kappers, ...
physica status solidi (c) 11 (3‐4), 750-753, 2014
14 2014 Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells S Schulz, DSP Tanner, EP O'Reilly, MA Caro, F Tang, JT Griffiths, ...
Applied Physics Letters 109 (22), 2016
13 2016 A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a -plane and m -plane GaN substrates D Kundys, D Sutherland, MJ Davies, F Oehler, J Griffiths, P Dawson, ...
Science and Technology of advanced MaTerialS 17 (1), 736-743, 2016
10 2016 Carrier Dynamics in Al‐Rich AlGaN/AlN Quantum Well Structures Governed by Carrier Localization C Frankerl, F Nippert, MP Hoffmann, C Brandl, HJ Lugauer, R Zeisel, ...
physica status solidi (b) 257 (12), 2000242, 2020
9 2020 Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells GM Christian, S Hammersley, MJ Davies, P Dawson, MJ Kappers, ...
physica status solidi (c) 13 (5‐6), 248-251, 2016
8 2016 
F. C-P. MassabuauUniversity of StrathclydeBestätigte E-Mail-Adresse bei strath.ac.uk
