Rajib Rahman
Rajib Rahman
Associate Professor of Physics, University of New South Wales
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Zitiert von
Zitiert von
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
GP Lansbergen, R Rahman, CJ Wellard, I Woo, J Caro, N Collaert, ...
Nature Physics 4 (8), 656-661, 2008
Atomistic simulation of realistically sized nanodevices using NEMO 3-D—Part I: Models and benchmarks
G Klimeck, SS Ahmed, H Bae, N Kharche, S Clark, B Haley, S Lee, ...
IEEE Transactions on Electron Devices 54 (9), 2079-2089, 2007
Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials
H Ilatikhameneh, Y Tan, B Novakovic, G Klimeck, R Rahman, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
Electrically Tunable Bandgaps in Bilayer MoS2
T Chu, H Ilatikhameneh, G Klimeck, R Rahman, Z Chen
Nano letters 15 (12), 8000-8007, 2015
Silicon quantum processor with robust long-distance qubit couplings
G Tosi, FA Mohiyaddin, V Schmitt, S Tenberg, R Rahman, G Klimeck, ...
Nature communications 8 (1), 450, 2017
Electrically controlling single-spin qubits in a continuous microwave field
A Laucht, JT Muhonen, FA Mohiyaddin, R Kalra, JP Dehollain, S Freer, ...
Science advances 1 (3), e1500022, 2015
Spin blockade and exchange in Coulomb-confined silicon double quantum dots
B Weber, YHM Tan, S Mahapatra, TF Watson, H Ryu, R Rahman, ...
Nature nanotechnology 9 (6), 430-435, 2014
High precision quantum control of single donor spins in silicon
R Rahman, CJ Wellard, FR Bradbury, M Prada, JH Cole, G Klimeck, ...
Physical review letters 99 (3), 036403, 2007
Spin readout and addressability of phosphorus-donor clusters in silicon
H Büch, S Mahapatra, R Rahman, A Morello, MY Simmons
Nature communications 4 (1), 2017, 2013
Spatially resolving valley quantum interference of a donor in silicon
J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ...
Nature materials 13 (6), 605-610, 2014
Few-layer phosphorene: An ideal 2D material for tunnel transistors
TA Ameen, H Ilatikhameneh, G Klimeck, R Rahman
Scientific reports 6 (1), 28515, 2016
Quantum simulation of the Hubbard model with dopant atoms in silicon
J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ...
Nature communications 7 (1), 11342, 2016
Dielectric engineered tunnel field-effect transistor
H Ilatikhameneh, TA Ameen, G Klimeck, J Appenzeller, R Rahman
IEEE Electron Device Letters 36 (10), 1097-1100, 2015
Polarization-engineered III-nitride heterojunction tunnel field-effect transistors
W Li, S Sharmin, H Ilatikhameneh, R Rahman, Y Lu, J Wang, X Yan, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
Aharonov–Bohm interference of fractional quantum Hall edge modes
J Nakamura, S Fallahi, H Sahasrabudhe, R Rahman, S Liang, ...
Nature Physics 15 (6), 563-569, 2019
Orbital Stark effect and quantum confinement transition of donors in silicon
R Rahman, GP Lansbergen, SH Park, J Verduijn, G Klimeck, S Rogge, ...
Physical Review B 80 (16), 165314, 2009
Complementary black phosphorus tunneling field-effect transistors
P Wu, T Ameen, H Zhang, LA Bendersky, H Ilatikhameneh, G Klimeck, ...
ACS nano 13 (1), 377-385, 2018
Saving Moore’s law down to 1 nm channels with anisotropic effective mass
H Ilatikhameneh, T Ameen, B Novakovic, Y Tan, G Klimeck, R Rahman
Scientific reports 6 (1), 31501, 2016
Atomically engineered electron spin lifetimes of 30 s in silicon
TF Watson, B Weber, YL Hsueh, LCL Hollenberg, R Rahman, ...
Science advances 3 (3), e1602811, 2017
Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures
C Zheng, Q Zhang, B Weber, H Ilatikhameneh, F Chen, H Sahasrabudhe, ...
ACS nano 11 (3), 2785-2793, 2017
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