| A low-noise high intrascene dynamic range CMOS image sensor with a 13 to 19b variable-resolution column-parallel folding-integration/cyclic ADC MW Seo, SH Suh, T Iida, T Takasawa, K Isobe, T Watanabe, S Itoh, ... IEEE Journal of Solid-State Circuits 47 (1), 272-283, 2011 | 161 | 2011 |
| A 0.27 e-rms read noise 220-μV/e-conversion gain reset-gate-less CMOS image sensor with 0.11-μm CIS process MW Seo, S Kawahito, K Kagawa, K Yasutomi IEEE Electron Device Letters 36 (12), 1344-1347, 2015 | 115 | 2015 |
| CMOS lock-in pixel image sensors with lateral electric field control for time-resolved imaging S Kawahito, G Baek, Z Li, SM Han, MW Seo, K Yasutomi, K Kagawa Proc. Int. Image Sensor Workshop (IISW) 361, 2013 | 99 | 2013 |
| A 10 ps time-resolution CMOS image sensor with two-tap true-CDS lock-in pixels for fluorescence lifetime imaging MW Seo, K Kagawa, K Yasutomi, Y Kawata, N Teranishi, Z Li, IA Halin, ... IEEE Journal of Solid-State Circuits 51 (1), 141-154, 2015 | 74 | 2015 |
| A low-noise high-dynamic-range 17-b 1.3-megapixel 30-fps CMOS image sensor with column-parallel two-stage folding-integration/cyclic ADC MW Seo, T Sawamoto, T Akahori, Z Liu, T Iida, T Takasawa, T Kosugi, ... IEEE transactions on electron devices 59 (12), 3396-3400, 2012 | 65 | 2012 |
| Single-event transient imaging with an ultra-high-speed temporally compressive multi-aperture CMOS image sensor F Mochizuki, K Kagawa, S Okihara, MW Seo, B Zhang, T Takasawa, ... Optics express 24 (4), 4155-4176, 2016 | 54 | 2016 |
| An ultrasensitive SiO2-encapsulated alloyed CdZnSeS quantum dot-molecular beacon nanobiosensor for norovirus O Adegoke, MW Seo, T Kato, S Kawahito, EY Park Biosensors and Bioelectronics 86, 135-142, 2016 | 53 | 2016 |
| 6.4 Single-shot 200Mfps 5× 3-aperture compressive CMOS imager F Mochizuki, K Kagawa, S Okihara, MW Seo, B Zhang, T Takasawa, ... 2015 IEEE International Solid-State Circuits Conference-(ISSCC) Digest of …, 2015 | 48 | 2015 |
| A low noise wide dynamic range CMOS image sensor with low-noise transistors and 17b column-parallel ADCs MW Seo, T Sawamoto, T Akahori, T Iida, T Takasawa, K Yasutomi, ... IEEE Sensors Journal 13 (8), 2922-2929, 2013 | 48 | 2013 |
| A time-resolved four-tap lock-in pixel CMOS image sensor for real-time fluorescence lifetime imaging microscopy MW Seo, Y Shirakawa, Y Kawata, K Kagawa, K Yasutomi, S Kawahito IEEE Journal of Solid-State Circuits 53 (8), 2319-2330, 2018 | 45 | 2018 |
| 4.8 A 0.44e−rms read-noise 32fps 0.5Mpixel high-sensitivity RG-less-pixel CMOS image sensor using bootstrapping reset MW Seo, T Wang, SW Jun, T Akahori, S Kawahito 2017 IEEE International Solid-State Circuits Conference (ISSCC), 80-81, 2017 | 35 | 2017 |
| Gradient band gap engineered alloyed quaternary/ternary CdZnSeS/ZnSeS quantum dots: an ultrasensitive fluorescence reporter in a conjugated molecular beacon system for the … O Adegoke, MW Seo, T Kato, S Kawahito, EY Park Journal of materials chemistry B 4 (8), 1489-1498, 2016 | 35 | 2016 |
| 5.5 A 2.1e− Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using … J Lee, SS Kim, IG Baek, H Shim, T Kim, T Kim, J Kyoung, D Im, J Choi, ... 2020 IEEE International Solid-State Circuits Conference-(ISSCC), 102-104, 2020 | 32 | 2020 |
| Optical characteristics of an n-well/gate-tied PMOSFET-type photodetector with built-in transfer gate for CMOS image sensor SH Seo, KD Kim, MW Seo, JS Kong, JK Shin, P Choi Sensors and Materials 19 (7), 435-444, 2007 | 30 | 2007 |
| 11.2 A 10.8 ps-time-resolution 256× 512 image sensor with 2-Tap true-CDS lock-in pixels for fluorescence lifetime imaging MW Seo, K Kagawa, K Yasutomi, T Takasawa, Y Kawata, N Teranishi, ... 2015 IEEE International Solid-State Circuits Conference-(ISSCC) Digest of …, 2015 | 28 | 2015 |
| An 80μV_< rms> Temporal Noise 82dB Dynamic Range CMOS Image Sensor with a 13 to 19b Variable Resolution Column-Parallel Folding Integration/Cyclic ADC MW Seo, S Suh, T Iida, H Watanabe, T Takasawa, T Akahori, K Isobe, ... ITE Technical Report 35.17, 1-4, 2011 | 27 | 2011 |
| Noise reduction effect of multiple-sampling-based signal-readout circuits for ultra-low noise CMOS image sensors S Kawahito, MW Seo Sensors 16 (11), 1867, 2016 | 26 | 2016 |
| A low dark leakage current high-sensitivity CMOS image sensor with STI-less shared pixel design MW Seo, S Kawahito, K Yasutomi, K Kagawa, N Teranishi IEEE Transactions on Electron Devices 61 (6), 2093-2097, 2014 | 24 | 2014 |
| A 2.6 e-rms low-random-noise, 116.2 mW low-power 2-Mp global shutter CMOS image sensor with pixel-level ADC and in-pixel memory MW Seo, M Chu, HY Jung, S Kim, J Song, J Lee, SY Kim, J Lee, SJ Byun, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 20 | 2021 |
| 2.45 e-RMS low-random-noise, 598.5 mW low-power, and 1.2 kfps high-speed 2-Mp global shutter CMOS image sensor with pixel-level ADC and memory MW Seo, M Chu, HY Jung, S Kim, J Song, D Bae, S Lee, J Lee, SY Kim, ... IEEE Journal of Solid-State Circuits 57 (4), 1125-1137, 2022 | 17 | 2022 |
