Xingzhao Shi
Xingzhao Shi
Applied Materials,Clarkson University
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Title
Cited by
Cited by
Year
Chemical and mechanical aspects of a Co-Cu planarization scheme based on an alkaline slurry formulation
MC Turk, X Shi, DAJ Gonyer, D Roy
ECS Journal of Solid State Science and Technology 5 (2), P88, 2015
392015
Minimizing the effects of galvanic corrosion during chemical mechanical planarization of aluminum in moderately acidic slurry solutions
X Shi, SE Rock, MC Turk, D Roy
Materials Chemistry and Physics 136 (2-3), 1027-1037, 2012
382012
Tribo-electrochemical characterization of Ru, Ta and Cu CMP systems using percarbonate based solutions
X Shi, DE Simpson, D Roy
ECS Journal of Solid State Science and Technology 4 (11), P5058, 2015
322015
Cobalt CMP development for 7nm logic device
C Wu, JH Han, X Shi, DR Koli, D Penigalapati
ECS Transactions 77 (5), 93, 2017
162017
The role of chemisorbed hydroxyl species in alkaline electrocatalysis of glycerol on gold
X Shi, DE Simpson, D Roy
Physical Chemistry Chemical Physics 17 (17), 11432-11444, 2015
152015
Experimental considerations for temperature controlled measurements of fast charge recombination times in dye sensitized solar cells using open circuit voltage decay and …
SE Rock, X Shi, JE Garland, D Roy
Measurement 53, 71-82, 2014
132014
Glass transition, viscosity, and conductivity correlations in solutions of lithium salts in PEGylated imidazolium ionic liquids
L Wu, RI Venkatanarayananan, X Shi, D Roy, S Krishnan
Journal of Molecular Liquids 198, 398-408, 2014
92014
Electrocatalysis of hypophosphite on nickel investigated using time resolved fourier transform electrochemical impedance spectroscopy
X Shi, DE Simpson, MJ Walters, CM Pettit, D Roy
Journal of The Electrochemical Society 161 (9), H583, 2014
62014
Effect of reactive ion etch on the polishing selectivity during silicon nitride chemical mechanical polishing for sub-10 nm logic device
J Han, X Shi, C Wu, D Koli, HJ Kim
ECS Journal of Solid State Science and Technology 6 (4), P101, 2017
52017
A new approach to the formation mechanism of tungsten void defect in chemical mechanical polishing
HJ Kim, B Egan, X Shi, JH Han
ECS Journal of Solid State Science and Technology 7 (11), P693, 2018
42018
Advanced structure for self-aligned contact and method for producing the same
H Huang, D Koli, Y Zhou, X Shi, C Chang, TF Chao
US Patent 10,211,103, 2019
32019
Brush cleaning effect on tugnsten voids defect in chemical mechanical polishing: CFM: Contamination free manufacturing
HJ Kim, B Egan, R Solan, X Shi, JH Han
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC …, 2018
32018
A Study on Selectivity during SiN Chemical Mechanical Polishing for Sub-10nm Logic Device
J Han, X Shi, C Wu, D Koli
International Conference on Planarization, 2016
3*2016
聚苯胺薄膜在不同质子酸溶液中的生长
李冀蜀, 林晨, 顾大伟, 史兴朝, 沈临江, 杨南如
南京工業大學學報 (自然科學版) 31 (2), 5-9, 2009
32009
Material combinations for polish stops and gate caps
H Huang, SHU Jiehui, C Chang, X Shi, J Gao, H Cao
US Patent App. 15/956,306, 2019
12019
Structure and method for inhibiting cobalt diffusion
Q Fang, H Huang, S Tsai, JH Zhang, X Shi, TF Chao
US Patent 9,865,543, 2018
12018
Gate structures
JH Han, X Shi, D Koli
US Patent App. 15/348,356, 2018
2018
Methods for nitride planarization using dielectric
H Sheng, H Huang, TF Chao, SHU Jiehui, J Liu, X Shi, L Economikos
US Patent 9,966,272, 2018
2018
Experimental Studies of Selected Aqueous Electrochemical Systems Relevant for Materials Processing in the Fabrications of Microelectronic Components and Direct Alcohol Fuel Cells
X Shi
Clarkson University, 2015
2015
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Articles 1–19