Lieve G Teugels
Lieve G Teugels
R&D Engineer, imec, Belgium
Verified email at imec.be
Title
Cited by
Cited by
Year
InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates
N Waldron, C Merckling, L Teugels, P Ong, SAU Ibrahim, F Sebaai, ...
IEEE Electron Device Letters 35 (11), 1097-1099, 2014
912014
An InGaAs/InP quantum well FinFet using the replacement fin process integrated in an RMG flow on 300 mm Si substrates
N Waldron, C Merckling, W Guo, P Ong, L Teugels, S AnsarI, ...
Symp. VLSI Technol. Dig. Tech. Papers (VLSIT), 32-33, 2014
872014
Gate-all-around InGaAs nanowire FETS with peak transconductance of 2200μS/μm at 50nm Lg using a replacement Fin RMG flow
N Waldron, S Sioncke, J Franco, L Nyns, A Vais, X Zhou, HC Lin, ...
2015 IEEE International Electron Devices Meeting (IEDM), 31.1. 1-31.1. 4, 2015
542015
Role of guanidine carbonate and crystal orientation on chemical mechanical polishing of ruthenium films
HP Amanapu, KV Sagi, LG Teugels, SV Babu
ECS Journal of Solid State Science and Technology 2 (11), P445, 2013
402013
Investigation of percarbonate based slurry chemistry for controlling galvanic corrosion during CMP of ruthenium
MC Turk, SE Rock, HP Amanapu, LG Teugels, D Roy
ECS Journal of Solid State Science and Technology 2 (5), P205, 2013
362013
Electrical characterization of CNT contacts with Cu Damascene top contact
MH Van Der Veen, B Vereecke, C Huyghebaert, DJ Cott, M Sugiura, ...
Microelectronic Engineering 106, 106-111, 2013
332013
Chiral domains achieved by surface adsorption of achiral nickel tetraphenyl-or octaethylporphyrin on smooth and locally kinked Au (111)
LG Teugels, LG Avila-Bront, SJ Sibener
The Journal of Physical Chemistry C 115 (6), 2826-2834, 2011
332011
Replacement fin processing for III–V on Si: From FinFets to nanowires
N Waldron, C Merckling, L Teugels, P Ong, F Sebaai, K Barla, N Collaert, ...
Solid-State Electronics 115, 81-91, 2016
242016
Chemical mechanical polishing of chemical vapor deposited Co films with minimal corrosion in the Cu/Co/Mn/SiCOH patterned structures
KV Sagi, LG Teugels, MH Van Der Veen, H Struyf, SR Alety, SV Babu
ECS Journal of Solid State Science and Technology 6 (5), P276, 2017
192017
Scalability of InGaAs gate-all-around FET integrated on 300mm Si platform: Demonstration of channel width down to 7nm and Lg down to 36nm
X Zhou, N Waldron, G Boccardi, F Sebaai, C Merckling, G Eneman, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
192016
Experimental determination of the temperature dependence of the absolute rate coefficients of the HCCO+ NO 2 and HCCO+ H 2 reactions
SA Carl, Q Sun, L Teugels, J Peeters
Physical Chemistry Chemical Physics 5 (24), 5424-5430, 2003
192003
High-aspect-ratio ruthenium lines for buried power rail
A Gupta, S Kundu, L Teugels, J Bommels, C Adelmann, N Heylen, ...
2018 IEEE International Interconnect Technology Conference (IITC), 4-6, 2018
162018
Investigation of guanidine carbonate-based slurries for chemical mechanical polishing of Ru/TiN barrier films with minimal corrosion
KV Sagi, HP Amanapu, LG Teugels, SV Babu
ECS Journal of Solid State Science and Technology 3 (7), P227, 2014
162014
First Demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafers
A Vandooren, J Franco, Z Wu, B Parvais, W Li, L Witters, A Walke, L Peng, ...
2018 IEEE International Electron Devices Meeting (IEDM), 7.1. 1-7.1. 4, 2018
152018
3-D sequential stacked planar devices featuring low-temperature replacement metal gate junctionless top devices with improved reliability
A Vandooren, J Franco, B Parvais, Z Wu, L Witters, A Walke, W Li, L Peng, ...
IEEE Transactions on Electron Devices 65 (11), 5165-5171, 2018
122018
3D sequential stacked planar devices on 300 mm wafers featuring replacement metal gate junction-less top devices processed at 525 C with improved reliability
A Vandooren, J Franco, B Parvais, Z Wu, L Witters, A Walke, W Li, L Peng, ...
2018 IEEE Symposium on VLSI Technology, 69-70, 2018
112018
Vertical nanowire and nanosheet FETs: Device features, novel schemes for improved process control and enhanced mobility, potential for faster & more energy efficient circuits
A Veloso, G Eneman, T Huynh-Bao, A Chasin, E Simoen, E Vecchio, ...
2019 IEEE International Electron Devices Meeting (IEDM), 11.1. 1-11.1. 4, 2019
102019
Updates on Ge and SiGe CMP processes for integration as high mobility channel materials
P Ong, L Teugels, M Delande, R Bhonsle, S Ansar, M Siebert, ...
2015 International Conference on Planarization/CMP Technology (ICPT), 1-3, 2015
72015
Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling
A Vandooren, L Witters, J Franco, A Mallik, B Parvais, Z Wu, A Walke, ...
2018 International Conference on IC Design & Technology (ICICDT), 145-148, 2018
62018
Chemical mechanical polishing and planarization of Mn-based barrier/Ru liner films in Cu interconnects for advanced metallization nodes
KV Sagi, LG Teugels, MH van der Veen, H Struyf, SV Babu
ECS Journal of Solid State Science and Technology 6 (5), P259, 2017
62017
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