Florian Werner
Florian Werner
Hydrosat S.à r.l., Luxembourg
Verified email at - Homepage
Cited by
Cited by
Improved quantitative description of Auger recombination in crystalline silicon
A Richter, SW Glunz, F Werner, J Schmidt, A Cuevas
Physical review B 86 (16), 165202, 2012
Electronic and chemical properties of the c-Si/Al2O3 interface
F Werner, B Veith, D Zielke, L Kühnemund, C Tegenkamp, M Seibt, ...
Journal of Applied Physics 109 (11), 113701, 2011
Organic-silicon heterojunction solar cells on n-type silicon wafers: The BackPEDOT concept
D Zielke, A Pazidis, F Werner, J Schmidt
Solar Energy Materials and Solar Cells 131, 110-116, 2014
Improved parameterization of Auger recombination in silicon
A Richter, F Werner, A Cuevas, J Schmidt, SW Glunz
Energy Procedia 27, 88-94, 2012
19.4%‐efficient large‐area fully screen‐printed silicon solar cells
S Gatz, H Hannebauer, R Hesse, F Werner, A Schmidt, T Dullweber, ...
physica status solidi (RRL)–Rapid Research Letters 5 (4), 147-149, 2011
Advances in the surface passivation of silicon solar cells
J Schmidt, F Werner, B Veith, D Zielke, S Steingrube, PP Altermatt, S Gatz, ...
Energy Procedia 15, 30-39, 2012
Very low surface recombination velocities on - and -type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide
F Werner, B Veith, V Tiba, P Poodt, F Roozeboom, R Brendel, J Schmidt
Applied Physics Letters 97 (16), 162103, 2010
Electrical conductivity of InN nanowires and the influence of the native indium oxide formed at their surface
F Werner, F Limbach, M Carsten, C Denker, J Malindretos, A Rizzi
Nano letters 9 (4), 1567-1571, 2009
Heavy Alkali Treatment of Cu(In,Ga)Se2 Solar Cells: Surface versus Bulk Effects
S Siebentritt, E Avancini, M Bär, J Bombsch, E Bourgeois, S Buecheler, ...
Advanced Energy Materials 10 (8), 1903752, 2020
Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon
B Veith, F Werner, D Zielke, R Brendel, J Schmidt
Energy Procedia 8, 307-312, 2011
Contact passivation in silicon solar cells using atomic‐layer‐deposited aluminum oxide layers
D Zielke, JH Petermann, F Werner, B Veith, R Brendel, J Schmidt
physica status solidi (RRL)–Rapid Research Letters 5 (8), 298-300, 2011
Hall measurements on low-mobility thin films
F Werner
Journal of Applied Physics 122 (13), 135306, 2017
High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells
F Werner, W Stals, R Görtzen, B Veith, R Brendel, J Schmidt
Energy Procedia 8, 301-306, 2011
Ordering kesterite improves solar cells: A low temperature post-deposition annealing study
G Rey, TP Weiss, J Sendler, A Finger, C Spindler, F Werner, M Melchiorre, ...
Solar Energy Materials and Solar Cells 151, 131-138, 2016
Transparent conductive CuCrO 2 thin films deposited by pulsed injection metal organic chemical vapor deposition: Up-scalable process technology for an improved transparency …
J Crêpellière, PL Popa, N Bahlawane, R Leturcq, F Werner, S Siebentritt, ...
Journal of Materials Chemistry C 4 (19), 4278-4287, 2016
Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
B Veith, T Ohrdes, F Werner, R Brendel, PP Altermatt, NP Harder, ...
Solar Energy Materials and Solar Cells 120, 436-440, 2014
Spatially-separated atomic layer deposition of Al2O3, a new option for high-throughput si solar cell passivation
B Vermang, F Werner, W Stals, A Lorenz, A Rothschild, J John, ...
2011 37th IEEE Photovoltaic Specialists Conference, 001144-001149, 2011
Improved black silicon for photovoltaic applications
M Algasinger, J Paye, F Werner, J Schmidt, MS Brandt, M Stutzmann, ...
Advanced Energy Materials 3 (8), 1068-1074, 2013
Interface recombination parameters of atomic-layer-deposited Al2O3 on crystalline silicon
F Werner, A Cosceev, J Schmidt
Journal of Applied Physics 111 (7), 073710, 2012
Electronic defects in : Towards a comprehensive model
C Spindler, F Babbe, MH Wolter, F Ehré, K Santhosh, P Hilgert, F Werner, ...
Physical Review Materials 3 (9), 090302, 2019
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