A 22.2-43 GHz Gate-Drain Mutually Induced Feedback Low Noise Amplifier in 28-nm CMOS A Ershadi, S Palermo, K Entesari 2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 27-30, 2021 | 15 | 2021 |
A 0.5-to-3.5 GHz self-interference-canceling receiver for in-band full-duplex wireless A Ershadi, K Entesari 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 151-154, 2019 | 14 | 2019 |
A 0.5-to-3.5-GHz full-duplex mixer-first receiver with Cartesian synthesized self-interference suppression interface in 65-nm CMOS A Ershadi, K Entesari IEEE Transactions on Microwave Theory and Techniques 68 (6), 1995-2010, 2020 | 9 | 2020 |
Outside nominal operation analysis and design considerations of inverse-class-E power amplifier A Lotfi, A Ershadi, A Medi, M Hayati, MK Kazimierczuk, H Sekiya, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 6 (1), 165-174, 2017 | 7 | 2017 |
A power-efficient 20–35 GHz MZM Driver with programmable linearizer in 28nm CMOS YL Luo, A Ershadi, R Rady, K Entesari, S Palermo 2021 Optical Fiber Communications Conference and Exhibition (OFC), 1-3, 2021 | 5 | 2021 |
Investigation of Integrated Smooth Transistor’s Switching Transition Power Amplifier—2.4-GHz Realization of Class- A Ershadi, A Medi IEEE Transactions on Microwave Theory and Techniques 65 (8), 3046-3055, 2017 | 5 | 2017 |
CMOS Wireless Receivers for Emerging RF/mm-Wave Applications A Ershadi | | 2020 |