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Raouf Bennaceur
Raouf Bennaceur
Universite Tunis El Manar
Verified email at fst.rnu.tn
Title
Cited by
Cited by
Year
Effect of pH on the properties of ZnS thin films grown by chemical bath deposition
TB Nasr, N Kamoun, M Kanzari, R Bennaceur
Thin solid films 500 (1-2), 4-8, 2006
2132006
Propriétés optiques des couches minces de SnO2 et CuInS2 airless spray
S Belgacem, R Bennaceur
Revue de Physique Appliquée 25 (12), 1245-1258, 1990
1711990
Vapour-etching-based porous silicon: a new approach
M Saadoun, N Mliki, H Kaabi, K Daoudi, B Bessaıs, H Ezzaouia, ...
Thin Solid Films 405 (1-2), 29-34, 2002
1052002
Electronic structure and optical properties of Sb2S3 crystal
TB Nasr, H Maghraoui-Meherzi, HB Abdallah, R Bennaceur
Physica B: Condensed Matter 406 (2), 287-292, 2011
1032011
Structure, surface composition, and electronic properties of and
N Kamoun, S Belgacem, M Amlouk, R Bennaceur, J Bonnet, F Touhari, ...
Journal of Applied Physics 89 (5), 2766-2771, 2001
1022001
Structural analysis of indium sulphide thin films elaborated by chemical bath deposition
B Yahmadi, N Kamoun, R Bennaceur, M Mnari, M Dachraoui, K Abdelkrim
Thin Solid Films 473 (2), 201-207, 2005
782005
Formation of luminescent (NH4) 2SiF6 phase from vapour etching-based porous silicon
M Saadoun, B Bessaıs, N Mliki, M Ferid, H Ezzaouia, R Bennaceur
Applied Surface Science 210 (3-4), 240-248, 2003
772003
Synthesis and characterization of nanocrystallized In2S3 thin films via CBD technique
B Yahmadi, N Kamoun, C Guasch, R Bennaceur
Materials Chemistry and Physics 127 (1-2), 239-247, 2011
642011
An optical soliton pair among absorbing three-level atoms
H Eleuch, R Bennaceur
Journal of Optics A: Pure and Applied Optics 5 (5), 528, 2003
592003
Nonlinear dissipation and the quantum noise of light in semiconductor microcavities
H Eleuch, R Bennaceur
Journal of Optics B: Quantum and Semiclassical Optics 6 (4), 189, 2004
582004
Formation of porous silicon for large-area silicon solar cells: A new method
M Saadoun, H Ezzaouia, B Bessaıs, MF Boujmil, R Bennaceur
Solar energy materials and solar cells 59 (4), 377-385, 1999
551999
Quantum model of emission in a weakly non ideal plasma
H Eleuch, N Ben Nessib, R Bennaceur
The European Physical Journal D-Atomic, Molecular, Optical and Plasma …, 2004
522004
Gettering impurities from crystalline silicon by phosphorus diffusion using a porous silicon layer
N Khedher, M Hajji, M Hassen, AB Jaballah, B Ouertani, H Ezzaouia, ...
Solar energy materials and solar cells 87 (1-4), 605-611, 2005
452005
Improvement of transport parameters in solar grade monocrystalline silicon by application of a sacrificial porous silicon layer
N Khedher, M Hajji, M Bouaıcha, MF Boujmil, H Ezzaouia, B Bessaıs, ...
Solid state communications 123 (1-2), 7-10, 2002
452002
Normal-state properties of BEDT-TTF compounds and the superconductivity pairing mechanism
R Louati, S Charfi-Kaddour, AB Ali, R Bennaceur, M Héritier
Physical Review B 62 (9), 5957, 2000
412000
First principles calculations of electronic and optical properties of Ag2S
TB Nasr, H Maghraoui-Meherzi, HB Abdallah, R Bennaceur
Solid state sciences 26, 65-71, 2013
342013
Correlation effects in ET compounds
R Louati, S Charfi-Kaddour, AB Ali, R Bennaceur, M Heritier
Synthetic metals 103 (1-3), 1857-1860, 1999
341999
Technological, structural and morphological aspects of screen-printed ITO used in ITO/Si type structure
B Bessais, N Mliki, R Bennaceur
Semiconductor science and technology 8 (1), 116, 1993
341993
Caractérisations structurale et morphologique des couches minces de CuInS2 et d'In-S" airless spray"
N Kamoun, S Belgacem, M Amlouk, R Bennaceur, K Abdelmoula, ...
Journal de Physique III 4 (3), 473-491, 1994
33*1994
Self-consistent random phase approximation: Application to the Hubbard model for finite number of sites
M Jemaï, P Schuck, J Dukelsky, R Bennaceur
Physical Review B 71 (8), 085115, 2005
322005
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Articles 1–20