Seibt
TitelZitiert vonJahr
Mechanisms of transition-metal gettering in silicon
SM Myers, M Seibt, W Schröter
Journal of applied physics 88 (7), 3795-3819, 2000
3512000
Seebeck effect in magnetic tunnel junctions
M Walter, J Walowski, V Zbarsky, M Münzenberg, M Schäfers, D Ebke, ...
Nature materials 10 (10), 742-746, 2011
2812011
Room-temperature silicon light-emitting diodes based on dislocation luminescence
V Kveder, M Badylevich, E Steinman, A Izotov, M Seibt, W Schröter
Applied Physics Letters 84 (12), 2106-2108, 2004
2172004
Bandlike and localized states at extended defects in silicon
W Schröter, J Kronewitz, U Gnauert, F Riedel, M Seibt
Physical Review B 52 (19), 13726, 1995
1971995
Electronic and chemical properties of the c-Si/Al2O3 interface
F Werner, B Veith, D Zielke, L Kühnemund, C Tegenkamp, M Seibt, ...
Journal of Applied Physics 109 (11), 113701, 2011
1872011
An approach to quantitative high-resolution transmission electron microscopy of crystalline materials
C Kisielowski, P Schwander, FH Baumann, M Seibt, Y Kim, A Ourmazd
Ultramicroscopy 58 (2), 131-155, 1995
1831995
Pulsed laser deposition (PLD)--a versatile thin film technique
HU Krebs, M Weisheit, J Faupel, E Süske, T Scharf, C Fuhse, M Störmer, ...
Advances in Solid State Physics, 505-518, 2003
1642003
Mapping projected potential, interfacial roughness, and composition in general crystalline solids by quantitative transmission electron microscopy
P Schwander, C Kisielowski, M Seibt, FH Baumann, Y Kim, A Ourmazd
Physical Review Letters 71 (25), 4150, 1993
1521993
Characterization of haze‐forming precipitates in silicon
M Seibt, K Graff
Journal of applied physics 63 (9), 4444-4450, 1988
1381988
Photoluminescence of carbon nanodots: Dipole emission centers and electron–phonon coupling
S Ghosh, AM Chizhik, N Karedla, MO Dekaliuk, I Gregor, H Schuhmann, ...
Nano letters 14 (10), 5656-5661, 2014
1342014
Electrical and recombination properties of copper‐silicide precipitates in silicon
AA Istratov, H Hedemann, M Seibt, OF Vyvenko, W Schröter, T Heiser, ...
Journal of The Electrochemical Society 145 (11), 3889-3898, 1998
1261998
Disturbance of Tunneling Coherence by Oxygen Vacancy in Epitaxial Magnetic Tunnel Junctions
GX Miao, YJ Park, JS Moodera, M Seibt, G Eilers, M Münzenberg
Physical review letters 100 (24), 246803, 2008
1082008
Nucleation mechanism of the seed of tetrapod ZnO nanostructures
C Ronning, NG Shang, I Gerhards, H Hofsäss, M Seibt
Journal of applied physics 98 (3), 034307, 2005
1022005
Electronic states at dislocations and metal silicide precipitates in crystalline silicon and their role in solar cell materials
M Seibt, R Khalil, V Kveder, W Schröter
Applied Physics A 96 (1), 235-253, 2009
1002009
Structural and electrical properties of metal silicide precipitates in silicon
M Seibt, H Hedemann, AA Istratov, F Riedel, A Sattler, W Schröter
physica status solidi (a) 171 (1), 301-310, 1999
1001999
Formation and properties of copper silicide precipitates in silicon
M Seibt, M Griess, AA Istratov, H Hedemann, A Sattler, W Schröter
physica status solidi (a) 166 (1), 171-182, 1998
941998
Microstructure-controlled magnetic properties of the bulk glass-forming alloy
S Schneider, A Bracchi, K Samwer, M Seibt, P Thiyagarajan
Applied physics letters 80 (10), 1749-1751, 2002
912002
Precipitation behaviour of nickel in silicon
M Seibt, W Schröter
Philosophical Magazine A 59 (2), 337-352, 1989
911989
Silicon light‐emitting diodes based on dislocation‐related luminescence
V Kveder, M Badylevich, W Schröter, M Seibt, E Steinman, A Izotov
physica status solidi (a) 202 (5), 901-910, 2005
882005
Recombination properties of structurally well defined NiSi2 precipitates in silicon
M Kittler, J Lärz, W Seifert, M Seibt, W Schröter
Applied physics letters 58 (9), 911-913, 1991
881991
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