| 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density R Suzuki, N Taoka, M Yokoyama, S Lee, SH Kim, T Hoshii, T Yasuda, ... Applied Physics Letters 100 (13), 2012 | 190 | 2012 |
| Individual atomic imaging of multiple dopant sites in As-doped Si using spectro-photoelectron holography K Tsutsui, T Matsushita, K Natori, T Muro, Y Morikawa, T Hoshii, ... Nano Letters 17 (12), 7533-7538, 2017 | 68 | 2017 |
| Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation N Taoka, M Yokoyama, SH Kim, R Suzuki, R Iida, S Lee, T Hoshii, ... 2011 International Electron Devices Meeting, 27.2. 1-27.2. 4, 2011 | 61 | 2011 |
| Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation T Hoshii, S Lee, R Suzuki, N Taoka, M Yokoyama, H Yamada, M Hata, ... Journal of Applied Physics 112 (7), 2012 | 58 | 2012 |
| Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties R Suzuki, N Taoka, M Yokoyama, SH Kim, T Hoshii, T Maeda, T Yasuda, ... Journal of Applied Physics 112 (8), 2012 | 54 | 2012 |
| Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering SL Tsai, T Hoshii, H Wakabayashi, K Tsutsui, TK Chung, EY Chang, ... Applied Physics Letters 118 (8), 2021 | 43 | 2021 |
| Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching Y Tamura, T Kaizu, T Kiba, M Igarashi, R Tsukamoto, A Higo, W Hu, ... Nanotechnology 24 (28), 285301, 2013 | 42 | 2013 |
| Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) Si micro channel areas T Hoshii, M Deura, M Sugiyama, R Nakane, S Sugahara, M Takenaka, ... physica status solidi c 5 (9), 2733-2735, 2008 | 40 | 2008 |
| Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors N Taoka, M Yokoyama, S Hyeon Kim, R Suzuki, S Lee, R Iida, T Hoshii, ... Applied Physics Letters 103 (14), 2013 | 38 | 2013 |
| Dislocation-free InGaAs on Si (111) using micro-channel selective-area metalorganic vapor phase epitaxy M Deura, T Hoshii, T Yamamoto, Y Ikuhara, M Takenaka, S Takagi, ... Applied physics express 2 (1), 011101, 2008 | 38 | 2008 |
| Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si M Deura, T Hoshii, M Takenaka, S Takagi, Y Nakano, M Sugiyama Journal of Crystal Growth 310 (23), 4768-4771, 2008 | 38 | 2008 |
| Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2 T Hoshii, M Yokoyama, H Yamada, M Hata, T Yasuda, M Takenaka, ... Applied Physics Letters 97 (13), 2010 | 35 | 2010 |
| Demonstration of 1200V scaled IGBTs driven by 5V gate voltage with superiorly low switching loss T Saraya, K Itou, T Takakura, M Fukui, S Suzuki, K Takeuchi, M Tsukuda, ... 2018 IEEE International Electron Devices Meeting (IEDM), 8.4. 1-8.4. 4, 2018 | 34 | 2018 |
| A possible origin of the large leakage current in ferroelectric Al1− x Sc x N films J Kataoka, SL Tsai, T Hoshii, H Wakabayashi, K Tsutsui, K Kakushima Japanese Journal of Applied Physics 60 (3), 030907, 2021 | 32 | 2021 |
| Experimental verification of a 3D scaling principle for low Vce(sat) IGBT K Kakushima, T Hoshii, K Tsutsui, A Nakajima, S Nishizawa, ... 2016 IEEE International Electron Devices Meeting (IEDM), 10.6. 1-10.6. 4, 2016 | 31 | 2016 |
| Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in Metal–Oxide–Semiconductor Field … N Taoka, M Yokoyama, SH Kim, R Suzuki, S Lee, R Iida, T Hoshii, ... IEEE Transactions on Device and Materials Reliability 13 (4), 456-462, 2013 | 28 | 2013 |
| On the thickness scaling of ferroelectricity in Al0. 78Sc0. 22N films SL Tsai, T Hoshii, H Wakabayashi, K Tsutsui, TK Chung, EY Chang, ... Japanese Journal of Applied Physics 60 (SB), SBBA05, 2021 | 26 | 2021 |
| Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces T Haimoto, T Hoshii, S Nakagawa, M Takenaka, S Takagi Applied Physics Letters 96 (1), 2010 | 25 | 2010 |
| High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film Using UHV RF Magnetron Sputtering and Sulfurization M Hamada, K Matsuura, T Sakamoto, I Muneta, T Hoshii, K Kakushima, ... IEEE Journal of the Electron Devices Society 7, 1258-1263, 2019 | 23 | 2019 |
| Effect of tensile strain on gate current of strained-Si n-channel metal–oxide–semiconductor field-effect transistors T Hoshii, S Sugahara, S Takagi Japanese journal of applied physics 46 (4S), 2122, 2007 | 22 | 2007 |
Shinichi TakagiThe University of TokyoVerified email at ee.t.u-tokyo.ac.jp
