| High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators O Seok, W Ahn, MK Han, MW Ha Semiconductor science and technology 28 (2), 025001, 2012 | 51 | 2012 |
| High breakdown voltage GaN Schottky barrier diode employing floating metal rings on AlGaN/GaN hetero-junction SC Lee, MW Ha, JC Her, SS Kim, JY Lim, KS Seo, MK Han Proceedings. ISPSD'05. The 17th International Symposium on Power …, 2005 | 40 | 2005 |
| Effects of nitride-based plasma pretreatment prior to SiNx passivation in AlGaN/GaN high-electron-mobility transistors on silicon substrates JH Kim, HG Choi, MW Ha, HJ Song, CH Roh, JH Lee, JH Park, CK Hahn Japanese journal of applied physics 49 (4S), 04DF05, 2010 | 29 | 2010 |
| Suppression of leakage current of Ni/Au Schottky barrier diode fabricated on AlGaN/GaN heterostructure by oxidation SC Lee, MW Ha, JY Lim, JC Her, KS Seo, MK Han Japanese journal of applied physics 45 (4S), 3398, 2006 | 29 | 2006 |
| Enhancement of cortisol measurement sensitivity by laser illumination for AlGaN/GaN transistor biosensor K Woo, W Kang, K Lee, P Lee, Y Kim, TS Yoon, CY Cho, KH Park, MW Ha, ... Biosensors and Bioelectronics 159, 112186, 2020 | 27 | 2020 |
| Silicon dioxide passivation of AlGaN/GaN HEMTs for high breakdown voltage MW Ha, SC Lee, JH Park, JC Her, KS Seo, MK Han 2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 1-4, 2006 | 25 | 2006 |
| A new vertical GaN Schottky barrier diode with floating metal ring for high breakdown voltage SC Lee, JC Her, SS Kim, MW Ha, KS Seo, YI Choi, MK Han 2004 Proceedings of the 16th International Symposium on Power Semiconductor …, 2004 | 23 | 2004 |
| A new junction termination method employing shallow trenches filled with oxide JK Oh, MW Ha, MK Han, YI Choi IEEE Electron Device Letters 25 (1), 16-18, 2004 | 23 | 2004 |
| PCBM-blended chlorobenzene hybrid anti-solvent engineering for efficient planar perovskite solar cells S Yoon, MW Ha, DW Kang Journal of Materials Chemistry C 5 (39), 10143-10151, 2017 | 20 | 2017 |
| Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition J Huang, AT Lucero, L Cheng, HJ Hwang, MW Ha, J Kim Applied Physics Letters 106 (12), 2015 | 20 | 2015 |
| Graphene-ferroelectric hybrid devices for multi-valued memory system S Jandhyala, G Mordi, D Mao, MW Ha, MA Quevedo-Lopez, BE Gnade, ... Applied Physics Letters 103 (2), 2013 | 20 | 2013 |
| High‐breakdown voltage and low on‐resistance AlGaN/GaN on Si MOS‐HEMTs employing an extended TaN gate on HfO2 gate insulator O Seok, W Ahn, MK Han, MW Ha Electronics letters 49 (6), 425-427, 2013 | 19 | 2013 |
| High-voltage Schottky barrier diode on silicon substrate MW Ha, CH Roh, DW Hwang, HG Choi, HJ Song, JH Lee, JH Park, ... Japanese journal of applied physics 50 (6S), 06GF17, 2011 | 19 | 2011 |
| Ni/Au Schottky gate oxidation and BCB passivation for high-breakdown-voltage AlGaN/GaN HEMT MW Ha, SC Lee, SS Kim, CM Yun, MK Han Superlattices and Microstructures 40 (4-6), 562-566, 2006 | 19 | 2006 |
| SiO2 passivation effects on the leakage current in AlGaN/GaN high-electron-mobility transistors employing additional Schottky gate MW Ha, YH Choi, J Lim, MK Han Japanese journal of applied physics 46 (4S), 2291, 2007 | 18 | 2007 |
| Sensible design of open-porous spherical architectures for hybrid supercapacitors with improved high-rate capability BG Lee, SI Shin, MW Ha Current Applied Physics 20 (3), 419-424, 2020 | 16 | 2020 |
| AlGaN/GaN MOS-HEMTs-on-Si employing sputtered TaN-based electrodes and HfO2 gate insulator O Seok, MW Ha Solid-State Electronics 105, 1-5, 2015 | 16 | 2015 |
| High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment O Seok, MK Han, YC Byun, J Kim, HC Shin, MW Ha Solid-State Electronics 103, 49-53, 2015 | 15 | 2015 |
| AlGaN/GaN Schottky Barrier Diode on Si Substrate Employing NiOx/Ni/Au Contact YS Kim, MW Ha, MK Kim, MK Han Japanese Journal of Applied Physics 51 (9S2), 09MC01, 2012 | 15 | 2012 |
| New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructure MW Ha, SC Lee, YH Choi, SS Kim, CM Yun, MK Han Superlattices and Microstructures 40 (4-6), 567-573, 2006 | 14 | 2006 |
Ogyun SeokKumoh National Institute of TechnologyVerified email at kumoh.ac.kr
