| A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ... 2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 2016 | 174 | 2016 |
| A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI KI Seo, B Haran, D Gupta, D Guo, T Standaert, R Xie, H Shang, E Alptekin, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 108 | 2014 |
| FINFET technology featuring high mobility SiGe channel for 10nm and beyond D Guo, G Karve, G Tsutsui, KY Lim, R Robison, T Hook, R Vega, D Liu, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 65 | 2016 |
| A Tersoff‐based interatomic potential for wurtzite AlN M Tungare, Y Shi, N Tripathi, P Suvarna, F Shahedipour‐Sandvik physica status solidi (a) 208 (7), 1569-1572, 2011 | 51 | 2011 |
| Fabrication of photonic crystals using a spin-coated hydrogen silsesquioxane hard mask L O’Faolain, MV Kotlyar, N Tripathi, R Wilson, TF Krauss Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 40 | 2006 |
| Mechanism of large area dislocation defect reduction in GaN layers on AlN∕ Si (111) by substrate engineering M Jamil, JR Grandusky, V Jindal, N Tripathi, F Shahedipour-Sandvik Journal of Applied Physics 102 (2), 2007 | 39 | 2007 |
| Comprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-fin SOI FINFETs A Paul, A Bryant, TB Hook, CC Yeh, V Kamineni, JB Johnson, N Tripathi, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 13.5. 1-13.5. 4, 2013 | 36 | 2013 |
| Selective area heteroepitaxy of nano-AlGaN ultraviolet excitation sources for biofluorescence application V Jindal, JR Grandusky, N Tripathi, F Shahedipour-Sandvik, S LeBoeuf, ... Journal of Materials Research 22 (4), 2007 | 35* | 2007 |
| Identification of subsurface damage in freestanding HVPE GaN substrates and its influence on epitaxial growth of GaN epilayers JR Grandusky, V Jindal, N Tripathi, F Shahedipour-Sandvik, H Lu, ... Journal of crystal growth 307 (2), 309-314, 2007 | 27 | 2007 |
| Fin liner integration under aggressive pitch MG Sung, N Tripathi US Patent 9,385,189, 2016 | 20 | 2016 |
| Effect of n+ GaN cap polarization field on Cs-free GaN photocathode characteristics N Tripathi, LD Bell, S Nikzad, F Shahedipour-Sandvik Applied Physics Letters 97 (5), 2010 | 20 | 2010 |
| The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes RP Tompkins, TA Walsh, MA Derenge, KW Kirchner, S Zhou, CB Nguyen, ... Journal of Materials Research 26 (23), 2895-2900, 2011 | 19 | 2011 |
| Novel Cs-free GaN photocathodes N Tripathi, LD Bell, S Nikzad, M Tungare, PH Suvarna, FS Sandvik Journal of electronic materials 40, 382-387, 2011 | 16 | 2011 |
| Selective area heteroepitaxy of low dimensional a ‐plane and c ‐plane InGaN nanostructures using pulsed MOCVD V Jindal, N Tripathi, M Tungare, O Paschos, P Haldar, ... physica status solidi c 5 (6), 1709-1711, 2008 | 14 | 2008 |
| AlGaN based tunable hyperspectral detector N Tripathi, JR Grandusky, V Jindal, F Shahedipour-Sandvik, LD Bell Applied physics letters 90 (23), 2007 | 12 | 2007 |
| Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces N Tripathi, V Jindal, F Shahedipour-Sandvik, S Rajan, A Vert Solid-state electronics 54 (11), 1291-1294, 2010 | 9 | 2010 |
| Effect of interfacial strain on the formation of AlGaN nanostructures by selective area heteroepitaxy V Jindal, J Grandusky, M Jamil, N Tripathi, B Thiel, ... Physica E: Low-dimensional Systems and Nanostructures 40 (3), 478-483, 2008 | 9 | 2008 |
| 10nm FINFET technology for low power and high performance applications D Guo, H Shang, K Seo, B Haran, T Standaert, D Gupta, E Alptekin, D Bae, ... 2014 12th IEEE International Conference on Solid-State and Integrated …, 2014 | 8 | 2014 |
| Investigation of fixed oxide charge and fin profile effects on bulk FinFET device characteristics B Kim, DI Bae, P Zeitzoff, X Sun, TE Standaert, N Tripathi, A Scholze, ... IEEE electron device letters 34 (12), 1485-1487, 2013 | 7 | 2013 |
| Crack-free III-nitride structures (> 3.5 μm) on silicon M Tungare, JM Leathersich, N Tripathi, P Suvarna, ... MRS Online Proceedings Library (OPL) 1324, mrss11-1324-d01-04, 2011 | 6 | 2011 |
Vibhu JindalApplied MaterialsVerified email at amat.com
