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Felix Nippert
Felix Nippert
Institut für Festkörperphysik, TU Berlin
Bestätigte E-Mail-Adresse bei physik.tu-berlin.de
Titel
Zitiert von
Zitiert von
Jahr
Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
F Nippert, SY Karpov, G Callsen, B Galler, T Kure, C Nenstiel, MR Wagner, ...
Applied Physics Letters 109 (16), 161103, 2016
842016
Auger recombination in AlGaN quantum wells for UV light-emitting diodes
F Nippert, M Tollabi Mazraehno, MJ Davies, MP Hoffmann, HJ Lugauer, ...
Applied Physics Letters 113 (7), 071107, 2018
562018
Germanium–the superior dopant in n‐type GaN
C Nenstiel, M Bügler, G Callsen, F Nippert, T Kure, S Fritze, A Dadgar, ...
physica status solidi (RRL)–Rapid Research Letters 9 (12), 716-721, 2015
472015
Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence
F Nippert, S Karpov, I Pietzonka, B Galler, A Wilm, T Kure, C Nenstiel, ...
Japanese Journal of Applied Physics 55 (5S), 05FJ01, 2016
432016
Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements
I Reklaitis, F Nippert, R Kudžma, T Malinauskas, S Karpov, I Pietzonka, ...
Journal of Applied Physics 121 (3), 035701, 2017
252017
Analysis of the exciton–LO-phonon coupling in single wurtzite GaN quantum dots
G Callsen, GMO Pahn, S Kalinowski, C Kindel, J Settke, J Brunnmeier, ...
Physical Review B 92 (23), 235439, 2015
222015
Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology issues
C Frankerl, MP Hoffmann, F Nippert, H Wang, C Brandl, N Tillner, ...
Journal of Applied Physics 126 (7), 075703, 2019
212019
Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements
G Callsen, MR Wagner, JS Reparaz, F Nippert, T Kure, S Kalinowski, ...
Physical Review B 90 (20), 205206, 2014
182014
Effect of gap modes on graphene and multilayer graphene in tip‐enhanced Raman spectroscopy
E Poliani, F Nippert, J Maultzsch
physica status solidi (b) 249 (12), 2511-2514, 2012
172012
Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)
EM Sala, G Stracke, S Selve, T Niermann, M Lehmann, S Schlichting, ...
Applied Physics Letters 109 (10), 102102, 2016
142016
A 310 nm optically pumped AlGaN vertical-cavity surface-emitting laser
F Hjort, J Enslin, M Cobet, MA Bergmann, J Gustavsson, T Kolbe, ...
ACS photonics 8 (1), 135-141, 2020
122020
Recombination dynamics in InxGa1−xN quantum wells—Contribution of excited subband recombination to carrier leakage
T Schulz, A Nirschl, P Drechsel, F Nippert, T Markurt, M Albrecht, ...
Applied Physics Letters 105 (18), 181109, 2014
122014
Green (In, Ga, Al) P-GaP light-emitting diodes grown on high-index GaAs surfaces
NN Ledentsov, VA Shchukin, J Lyytikäinen, O Okhotnikov, ...
Applied Physics Letters 105 (18), 181902, 2014
122014
Strongly localized carriers in Al-rich AlGaN/AlN single quantum wells grown on sapphire substrates
C Frankerl, F Nippert, MP Hoffmann, H Wang, C Brandl, HJ Lugauer, ...
Journal of Applied Physics 127 (9), 095701, 2020
92020
Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy
S Freytag, M Feneberg, C Berger, J Bläsing, A Dadgar, G Callsen, ...
Journal of Applied Physics 120 (1), 015703, 2016
92016
Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells
F Nippert, A Nirschl, T Schulz, G Callsen, I Pietzonka, S Westerkamp, ...
Journal of Applied Physics 119 (21), 215707, 2016
92016
Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition
N Tillner, C Frankerl, F Nippert, MJ Davies, C Brandl, R Lösing, M Mandl, ...
physica status solidi (b) 257 (12), 2000278, 2020
82020
Origin of carrier localization in AlGaN-based quantum well structures and implications for efficiency droop
C Frankerl, F Nippert, A Gomez-Iglesias, MP Hoffmann, C Brandl, ...
Applied Physics Letters 117 (10), 102107, 2020
72020
Electronic excitations stabilized by a degenerate electron gas in semiconductors
C Nenstiel, G Callsen, F Nippert, T Kure, S Schlichting, N Jankowski, ...
Communications Physics 1 (1), 1-7, 2018
72018
Green (In, Ga, Al) P-GaP light-emitting diodes grown on high-index GaAs surfaces
NN Ledentsov, VA Shchukin, J Lyytikäinen, O Okhotnikov, NA Cherkashin, ...
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State …, 2015
72015
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