Per-Erik Hellström
Per-Erik Hellström
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Zitiert von
Zitiert von
Oxidation of silicon–germanium alloys. II. A mathematical model
PE Hellberg, SL Zhang, FM dHeurle, CS Petersson
Journal of applied physics 82 (11), 5779-5787, 1997
Oxidation of silicon–germanium alloys. I. An experimental study
PE Hellberg, SL Zhang, FM d’Heurle, CS Petersson
Journal of applied physics 82 (11), 5773-5778, 1997
Work function of boron-doped polycrystalline Si/sub x/Ge/sub 1-x/films
PE Hellberg, SL Zhang, CS Petersson
IEEE Electron Device Letters 18 (9), 456-458, 1997
SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation
Z Zhang, Z Qiu, PE Hellstrom, G Malm, J Olsson, J Lu, M Ostling, ...
IEEE electron device letters 29 (1), 125-127, 2007
1/f noise in Si and Si/sub 0.7/Ge/sub 0.3/pMOSFETs
M von Haartman, AC Lindgren, PE Hellstrom, BG Malm, SL Zhang, ...
IEEE Transactions on Electron Devices 50 (12), 2513-2519, 2003
Oxidation of silicon–germanium alloys. II. A mathematical model
PE Hellberg, SL Zhang, FM d’Heurle, CS Petersson
Journal of applied physics 82 (11), 5779-5787, 1997
Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator
J Seger, PE Hellström, J Lu, BG Malm, M von Haartman, M Östling, ...
Applied Physics Letters 86 (25), 253507, 2005
A novel strained Si0. 7Ge0. 3 surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack
D Wu, AC Lindgren, S Persson, G Sjoblom, M von Haartman, J Seger, ...
IEEE Electron Device Letters 24 (3), 171-173, 2003
Effect of growth temperature on the properties of evaporated tantalum pentoxide thin films on silicon deposited using oxygen radicals
JV Grahn, PE Hellberg, E Olsson
Journal of applied physics 84 (3), 1632-1642, 1998
Characterization of transfer-bonded silicon bolometer arrays
F Niklaus, J Pejnefors, M Dainese, M Haggblad, PE Hellstrom, ...
Infrared Technology and Applications XXX 5406, 521-530, 2004
A robust spacer gate process for deca-nanometer high-frequency MOSFETs
J Hållstedt, PE Hellström, Z Zhang, BG Malm, J Edholm, J Lu, SL Zhang, ...
Microelectronic Engineering 83 (3), 434-439, 2006
Boron‐Doped Polycrystalline Si x Ge1− x Films: Dopant Activation and Solid Solubility
PE Hellberg, A Gagnor, SL Zhang, CS Petersson
Journal of the Electrochemical Society 144 (11), 3968, 1997
Sidewall transfer lithography for reliable fabrication of nanowires and deca-nanometer MOSFETs
J Hållstedt, PE Hellström, HH Radamson
Thin Solid Films 517 (1), 117-120, 2008
Strained Si/SiGe MOS technology: Improving gate dielectric integrity
SH Olsen, L Yan, R Agaiby, E Escobedo-Cousin, AG O’Neill, ...
Microelectronic Engineering 86 (3), 218-223, 2009
Effects of carbon on Schottky barrier heights of NiSi modified by dopant segregation
J Luo, ZJ Qiu, DW Zhang, PE Hellstrom, M Ostling, SL Zhang
IEEE electron device letters 30 (6), 608-610, 2009
Reduced self-heating by strained silicon substrate engineering
A O’Neill, R Agaiby, S Olsen, Y Yang, PE Hellstrom, M Ostling, M Oehme, ...
Applied surface science 254 (19), 6182-6185, 2008
Thulium silicate interfacial layer for scalable high-k/metal gate stacks
ED Litta, PE Hellström, C Henkel, M Östling
IEEE transactions on electron devices 60 (10), 3271-3276, 2013
Electrically robust ultralong nanowires of NiSi, , and
Z Zhang, PE Hellström, M Östling, SL Zhang, J Lu
Applied physics letters 88 (4), 043104, 2006
Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
L Donetti, F Gámiz, S Thomas, TE Whall, DR Leadley, PE Hellström, ...
Journal of Applied Physics 110 (6), 063711, 2011
Low-frequency noise and Coulomb scattering in Si0. 8Ge0. 2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics
M von Haartman, J Westlinder, D Wu, BG Malm, PE Hellström, J Olsson, ...
Solid-state electronics 49 (6), 907-914, 2005
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