| Continuous analytic IV model for surrounding-gate MOSFETs D Jimenez, B Iniguez, J Sune, LF Marsal, J Pallares, J Roig, D Flores IEEE Electron Device Letters 25 (8), 571-573, 2004 | 346 | 2004 |
| Charge-based modeling of junctionless double-gate field-effect transistors JM Sallese, N Chevillon, C Lallement, B Iniguez, F Prégaldiny IEEE Transactions on Electron Devices 58 (8), 2628-2637, 2011 | 264 | 2011 |
| Explicit continuous model for long-channel undoped surrounding gate MOSFETs B Iniguez, D Jimenez, J Roig, HA Hamid, LF Marsal, J Pallarès IEEE Transactions on Electron Devices 52 (8), 1868-1873, 2005 | 262 | 2005 |
| Accurate modeling and parameter extraction method for organic TFTs M Estrada, A Cerdeira, J Puigdollers, L Reséndiz, J Pallares, LF Marsal, ... Solid-state electronics 49 (6), 1009-1016, 2005 | 205 | 2005 |
| Analytical model of the threshold voltage and subthreshold swing of undoped cylindrical gate-all-around-based MOSFETs H Abd El Hamid, B Iñíguez, JR Guitart IEEE transactions on electron devices 54 (3), 572-579, 2007 | 182 | 2007 |
| A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects MD Jacunski, MS Shur, AA Owusu, T Ytterdal, M Hack, B Iniguez IEEE Transactions on Electron Devices 46 (6), 1146-1158, 1999 | 168 | 1999 |
| Modeling of nanoscale gate-all-around MOSFETs D Jimenez, JJ Saenz, B Iniguez, J Sune, LF Marsal, J Pallares IEEE Electron device letters 25 (5), 314-316, 2004 | 167 | 2004 |
| Charge transport in organic and polymer thin-film transistors: Recent issues O Marinov, MJ Deen, B Iniguez IEE Proceedings-Circuits, Devices and Systems 152 (3), 189-209, 2005 | 148 | 2005 |
| Two-dimensional analytical threshold voltage and subthreshold swing models of undoped symmetric double-gate MOSFETs H Abd El Hamid, JR Guitart, B Iñíguez IEEE Transactions on Electron Devices 54 (6), 1402-1408, 2007 | 137 | 2007 |
| A compact model for organic field-effect transistors with improved output asymptotic behaviors CH Kim, A Castro-Carranza, M Estrada, A Cerdeira, Y Bonnassieux, ... IEEE Transactions on Electron Devices 60 (3), 1136-1141, 2013 | 126 | 2013 |
| Compact-modeling solutions for nanoscale double-gate and gate-all-around MOSFETs B Iñiguez, TA Fjeldly, A Lázaro, F Danneville, MJ Deen IEEE transactions on electron devices 53 (9), 2128-2142, 2006 | 126 | 2006 |
| The 2021 flexible and printed electronics roadmap Y Bonnassieux, CJ Brabec, Y Cao, TB Carmichael, ML Chabinyc, ... Flexible and printed electronics 6 (2), 023001, 2021 | 120 | 2021 |
| Mobility model for compact device modeling of OTFTs made with different materials M Estrada, I Mejía, A Cerdeira, J Pallares, LF Marsal, B Iñiguez Solid-State Electronics 52 (5), 787-794, 2008 | 116 | 2008 |
| Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems D Flandre, S Adriaensen, A Akheyar, A Crahay, L Demeûs, P Delatte, ... Solid-State Electronics 45 (4), 541-549, 2001 | 114 | 2001 |
| Compact model for short channel symmetric doped double-gate MOSFETs A Cerdeira, B Iñiguez, M Estrada Solid-State Electronics 52 (7), 1064-1070, 2008 | 113 | 2008 |
| Explicit analytical charge and capacitance models of undoped double-gate MOSFETs O Moldovan, D Jimenez, JR Guitart, FA Chaves, B Iniguez IEEE Transactions on Electron Devices 54 (7), 1718-1724, 2007 | 106 | 2007 |
| Compact model for short-channel junctionless accumulation mode double gate MOSFETs T Holtij, M Graef, FM Hain, A Kloes, B Iñíguez IEEE Transactions on Electron Devices 61 (2), 288-299, 2013 | 104 | 2013 |
| Compact charge-based physical models for current and capacitances in AlGaN/GaN HEMTs FM Yigletu, S Khandelwal, TA Fjeldly, B Iniguez IEEE Transactions on Electron Devices 60 (11), 3746-3752, 2013 | 101 | 2013 |
| Universal compact model for long-and short-channel thin-film transistors B Iñiguez, R Picos, D Veksler, A Koudymov, MS Shur, T Ytterdal, ... Solid-State Electronics 52 (3), 400-405, 2008 | 93 | 2008 |
| Self-heating and kink effects in a-Si: H thin film transistors L Wang, TA Fjeldly, B Iniguez, HC Slade, M Shur IEEE Transactions on electron devices 47 (2), 387-397, 2000 | 86 | 2000 |
