Xiaopeng Xu
Xiaopeng Xu
Synopsys, IBM, Brown University
Verified email at - Homepage
Cited by
Cited by
Numerical simulations of fast crack growth in brittle solids
XP Xu, A Needleman
Journal of the Mechanics and Physics of Solids 42 (9), 1397-1434, 1994
Void nucleation by inclusion debonding in a crystal matrix
X Xu, A Needleman
Modelling and Simulation in Materials Science and Engineering 1, 111, 1993
Numerical simulations of dynamic crack growth along an interface
XP Xu, A Needleman
International journal of fracture 74 (4), 289-324, 1996
A molecular dynamics investigation of rapid fracture mechanics
FF Abraham, D Brodbeck, WE Rudge, X Xu
Journal of the Mechanics and Physics of Solids 45 (9), 1595-1619, 1997
Performanace and reliability analysis of 3D-integration structures employing through silicon via (TSV)
AP Karmarkar, X Xu, V Moroz
2009 IEEE International Reliability Physics Symposium, 682-687, 2009
Numerical simulations of dynamic interfacial crack growth allowing for crack growth away from the bond line
XP Xu, A Needleman
International Journal of Fracture 74 (3), 253-275, 1995
pMOSFET with 200% mobility enhancement induced by multiple stressors
L Washington, F Nouri, S Thirupapuliyur, G Eneman, P Verheyen, ...
Electron Device Letters, IEEE 27 (6), 511-513, 2006
Analyzing strained-silicon options for stress-engineering transistors
V Moroz, X Xu, D Pramanik, F Nouri, Z Krivokapic
Solid State Technology 47 (7), 49-52, 2004
A systematic study of trade-offs in engineering a locally strained pMOSFET
F Nouri, P Verheyen, L Washington, V Moroz, I De Wolf, M Kawaguchi, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
Modeling the impact of stress on silicon processes and devices
V Moroz, N Strecker, X Xu, L Smith, I Bork
Materials Science in Semiconductor Processing 6 (1-3), 27-36, 2003
The impact of layout on stress-enhanced transistor performance
V Moroz, G Eneman, P Verheyen, F Nouri, L Washington, L Smith, ...
2005 International Conference On Simulation of Semiconductor Processes and …, 2005
Design Automation and TCAD Tool Solutions for Through Silicon Via-Based 3D IC Stack
J Kawa, X Xu
3D IC Stacking Technology, 77-111, 2011
Method and apparatus for placing transistors in proximity to through-silicon vias
J Sproch, V Moroz, X Xu, Karmarkar, Aditya
US Patent 8,362,622, 2013
Effect of inhomogeneities on dynamic crack growth in an elastic solid
XP Xu, A Needleman, FF Abraham
Modelling and Simulation in Materials Science and Engineering 5 (5), 489, 1997
Simulation methodology and flow integration for 3D IC stress management
M Nakamoto, R Radojcic, W Zhao, V Kumar, A Karmarkar, X Xu
IEEE Custom Integrated Circuits Conference 2010, 1-4, 2010
Stress and strain fields at the tip of a sharp V-notch in a power-hardening material
ZB Kuang, XP Xu
International Journal of Fracture 35 (1), 39-53, 1987
Through-silicon-via technology for 3D integration
J Dukovic, S Ramaswami, S Pamarthy, R Yalamanchili, N Rajagopalan, ...
Memory Workshop (IMW), 2010 IEEE International, 1-2, 2010
Elastic anisotropy of Cu and its impact on stress management for 3D IC: Nanoindentation and TCAD simulation study
KB Yeap, E Zschech, UD Hangen, T Wyrobek, LW Kong, A Karmakar, ...
Journal of Materials Research 27 (1), 339-348, 2012
Material, process and geometry effects on through-silicon via reliability and isolation
AP Karmarkar, X Xu, S Ramaswami, J Dukovic, K Sapre, A Bhatnagar
MRS Online Proceedings Library 1249 (1), 1-6, 2010
3D TCAD modeling for stress management in through silicon via (TSV) stacks
X Xu, A Karmarkar
AIP Conference Proceedings-American Institute of Physics 1378 (1), 53, 2011
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