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Xianfeng Ni
Xianfeng Ni
Philips Lumileds Lighting Company
Verified email at philips.com
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Cited by
Year
On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
J Xie, X Ni, Q Fan, R Shimada, Ü Özgür, H Morkoç
Applied Physics Letters 93 (12), 2008
4412008
Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells
X Ni, Q Fan, R Shimada, Ü Özgür, H Morkoç
Applied Physics Letters 93 (17), 2008
2822008
Optimization of (112¯ 0) a-plane GaN growth by MOCVD on (11¯ 02) r-plane sapphire
X Ni, Y Fu, YT Moon, N Biyikli, H Morkoc
Journal of Crystal Growth 290 (1), 166-170, 2006
1782006
High electron mobility in nearly lattice-matched AlInN∕ AlN∕ GaN heterostructure field effect transistors
J Xie, X Ni, M Wu, JH Leach, Ü Özgür, H Morkoç
Applied Physics Letters 91 (13), 2007
1622007
GaN-based light-emitting diodes: Efficiency at high injection levels
Ü Ozgur, H Liu, X Li, X Ni, H Morkoc
Proceedings of the IEEE 98 (7), 1180-1196, 2010
1552010
Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes
X Li, X Ni, J Lee, M Wu, Ü Özgür, H Morkoç, T Paskova, G Mulholland, ...
Applied Physics Letters 95 (12), 2009
132*2009
InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes
X Ni, X Li, J Lee, S Liu, V Avrutin, Ü Özgür, H Morkoç, A Matulionis, ...
Applied Physics Letters 97 (3), 2010
1162010
Epitaxial lateral overgrowth of (112 2) semipolar GaN on (11 00) m-plane sapphire by metalorganic chemical vapor deposition
X Ni, Ü Özgür, AA Baski, H Morkoç, L Zhou, DJ Smith, CA Tran
Applied physics letters 90 (18), 2007
1132007
Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy
S Chevtchenko, X Ni, Q Fan, AA Baski, H Morkoç
Applied physics letters 88 (12), 2006
892006
Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them
X Ni, X Li, J Lee, S Liu, V Avrutin, Ü Özgür, H Morkoç, A Matulionis
Journal of Applied Physics 108 (3), 2010
832010
Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork
J Xie, Ü Özgür, Y Fu, X Ni, H Morkoç, CK Inoki, TS Kuan, JV Foreman, ...
Applied physics letters 90 (4), 2007
742007
Defect reduction in (112¯) a-plane GaN by two-stage epitaxial lateral overgrowth
X Ni, Ü Özgür, Y Fu, N Biyikli, J Xie, AA Baski, H Morkoç, Z Liliental-Weber
Applied physics letters 89 (26), 2006
642006
Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons
JH Leach, CY Zhu, M Wu, X Ni, X Li, J Xie, Ü Özgür, H Morkoç, J Liberis, ...
Applied Physics Letters 95 (22), 2009
572009
Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers
J Xie, JH Leach, X Ni, M Wu, R Shimada, Ü Özgür, H Morkoç
Applied Physics Letters 91 (26), 2007
572007
Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency
X Ni, X Li, J Lee, S Liu, V Avrutin, A Matulionis, Ü Özgür, H Morkoç
Superlattices and Microstructures 48 (2), 133-153, 2010
552010
Nonpolar m-plane GaN on patterned Si (112) substrates by metalorganic chemical vapor deposition
X Ni, M Wu, J Lee, X Li, AA Baski, Ü Özgür, H Morkoç
Applied Physics Letters 95 (11), 2009
512009
Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels
A Matulionis, J Liberis, I Matulionienė, M Ramonas, E Šermukšnis, ...
Applied Physics Letters 95 (19), 2009
472009
Reactive ion etch damage on GaN and its recovery
Q Fan, S Chevtchenko, X Ni, SJ Cho, F Yun, H Morkoç
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
462006
Ballistic transport in InGaN-based LEDs: impact on efficiency
Ü Özgür, X Ni, X Li, J Lee, S Liu, S Okur, V Avrutin, A Matulionis, H Morkoc
Semiconductor science and technology 26 (1), 014022, 2010
422010
Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates
JH Leach, CY Zhu, M Wu, X Ni, X Li, J Xie, Ü Özgür, H Morkoç, J Liberis, ...
Applied Physics Letters 96 (13), 2010
412010
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