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Ida Marie Høiaas
Ida Marie Høiaas
Phd student in nanoelectronics, NTNU
Verified email at ntnu.no - Homepage
Title
Cited by
Cited by
Year
GaN/AlGaN nanocolumn ultraviolet light-emitting diode using double-layer graphene as substrate and transparent electrode
IM Høiaas, A Liudi Mulyo, PE Vullum, DC Kim, L Ahtapodov, BO Fimland, ...
Nano letters 19 (3), 1649-1658, 2019
512019
Graphene-Based Transparent Conducting Substrates for GaN/AlGaN Nanocolumn Flip-Chip Ultraviolet Light-Emitting Diodes
A Liudi Mulyo, A Mukherjee, IM Høiaas, L Ahtapodov, TA Nilsen, ...
ACS Applied Nano Materials 4 (9), 9653-9664, 2021
72021
Process for growing nanowires or nanopyramids on graphitic substrates
DC Kim, IM Høiaas, M Munshi, BO Fimland, H Weman, REN Dingding, ...
US Patent 10,714,337, 2020
72020
Nanowires or nanopyramids grown on graphitic substrate
DC Kim, IME Høiaas, CPJ Heimdal, BOM Fimland, H Weman
US Patent 10,347,791, 2019
72019
Growth optimization for self-catalyzed GaAs-based nanowires on metal-induced crystallized amorphous substrate
D Ren, IM Høiaas, JF Reinertsen, DL Dheeraj, AM Munshi, DC Kim, ...
Journal of Vacuum Science & Technology B 34 (2), 2016
72016
Fabrication of Si (111) crystalline thin film on graphene by aluminum-induced crystallization
IM Høiaas, DC Kim, H Weman
Applied Physics Letters 108 (16), 2016
32016
Process for growing nanowires or nanopyramids on graphitic substrates
DC Kim, IM Høiaas, M Munshi, BO Fimland, H Weman, REN Dingding, ...
US Patent 11,450,528, 2022
2022
Nanowires or nanopyramids grown on a graphene substrate
DC Kim, IME Høiaas, CPJ Heimdal, BOM Fimland, H Weman
US Patent 11,264,536, 2022
2022
Semiconductor-graphene hybrid structures and optoelectronic devices
IM Høiaas
NTNU, 2020
2020
Fabricating Si [111] Nanostructures on Graphene by Aluminum-Induced Crystallization for High Yield Vertical III-V Semiconductor Nanowire Growth
IM Høiaas
NTNU, 2014
2014
Graphene-Si (111) thin film heterostructure by aluminum-induced crystallization
IM Høiaas
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Articles 1–11