ZnO nanowire UV photodetectors with high internal gain C Soci, A Zhang, B Xiang, SA Dayeh, DPR Aplin, J Park, XY Bao, YH Lo, ... Nano letters 7 (4), 1003-1009, 2007 | 2898 | 2007 |
Superconductivity modulated by quantum size effects Y Guo, YF Zhang, XY Bao, TZ Han, Z Tang, LX Zhang, WG Zhu, EG Wang, ... Science 306 (5703), 1915-1917, 2004 | 702 | 2004 |
Nanowire photodetectors C Soci, A Zhang, XY Bao, H Kim, Y Lo, D Wang Journal of nanoscience and nanotechnology 10 (3), 1430-1449, 2010 | 498 | 2010 |
Injector for semiconductor epitaxy growth X Bao, SK Lau, EAC Sanchez US Patent App. 15/156,371, 2016 | 405 | 2016 |
Direct heteroepitaxy of vertical InAs nanowires on Si substrates for broad band photovoltaics and photodetection W Wei, XY Bao, C Soci, Y Ding, ZL Wang, D Wang Nano letters 9 (8), 2926-2934, 2009 | 365 | 2009 |
Materials for tensile stress and low contact resistance and method of forming Z Ye, X Bao, EAC Sanchez, X Li US Patent App. 15/350,967, 2017 | 344 | 2017 |
Flexible Control of Block Copolymer Directed Self‐Assembly using Small, Topographical Templates: Potential Lithography Solution for Integrated Circuit Contact Hole Patterning H Yi, XY Bao, J Zhang, C Bencher, LW Chang, X Chen, R Tiberio, ... Advanced Materials 24 (23), 3107-3114, 2012 | 146 | 2012 |
Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si (001) substrate by metalorganic chemical vapour deposition with high mobility R Alcotte, M Martin, J Moeyaert, R Cipro, S David, F Bassani, F Ducroquet, ... Apl Materials 4 (4), 2016 | 145 | 2016 |
Heteroepitaxial growth of vertical GaAs nanowires on Si (111) substrates by metal− organic chemical vapor deposition XY Bao, C Soci, D Susac, J Bratvold, DPR Aplin, W Wei, CY Chen, ... Nano letters 8 (11), 3755-3760, 2008 | 127 | 2008 |
Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication D Wang, C Soci, X Bao, W Wei, Y Jing, K Sun US Patent 8,932,940, 2015 | 125 | 2015 |
A systematic study on the growth of GaAs nanowires by metal− organic chemical vapor deposition C Soci, XY Bao, DPR Aplin, D Wang Nano letters 8 (12), 4275-4282, 2008 | 120 | 2008 |
Integrated method for wafer outgassing reduction C Yan, X Bao, H Chung, SS Chu US Patent 10,043,667, 2018 | 95 | 2018 |
Quantum size effects on the perpendicular upper critical field in ultrathin lead films XY Bao, YF Zhang, Y Wang, JF Jia, QK Xue, XC Xie, ZX Zhao Physical review letters 95 (24), 247005, 2005 | 93 | 2005 |
Advances in the synthesis of InAs and GaAs nanowires for electronic applications SA Dayeh, C Soci, XY Bao, D Wang Nano Today 4 (4), 347-358, 2009 | 80 | 2009 |
Optical absorption enhancement in freestanding GaAs thin film nanopyramid arrays D Liang, Y Huo, Y Kang, KX Wang, A Gu, M Tan, Z Yu, S Li, J Jia, X Bao, ... Advanced Energy Materials 2 (10), 1254-1260, 2012 | 72 | 2012 |
Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si (100) 300 mm wafers for next generation non planar devices R Cipro, T Baron, M Martin, J Moeyaert, S David, V Gorbenko, F Bassani, ... Applied Physics Letters 104 (26), 2014 | 62 | 2014 |
Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si (001) W Guo, V Pena, X Bao, C Merckling, N Waldron, N Collaert, M Caymax, ... Applied Physics Letters 105 (6), 2014 | 58 | 2014 |
Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si (001) M Martin, D Caliste, R Cipro, R Alcotte, J Moeyaert, S David, F Bassani, ... Applied Physics Letters 109 (25), 2016 | 57 | 2016 |
Nanowire photodetector and image sensor with internal gain D Wang, C Soci, Y Lo, A Zhang, D Aplin, L Wang, S Dayeh, XY Bao US Patent 8,440,997, 2013 | 57 | 2013 |
SRAM, NAND, DRAM contact hole patterning using block copolymer directed self-assembly guided by small topographical templates XY Bao, H Yi, C Bencher, LW Chang, H Dai, Y Chen, PTJ Chen, ... 2011 International Electron Devices Meeting, 7.7. 1-7.7. 4, 2011 | 56 | 2011 |