|Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes|
J Yoon, W Park, GY Bae, Y Kim, HS Jang, Y Hyun, SK Lim, YH Kahng, ...
Small 9 (19), 3295-3300, 2013
|Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes|
G Jo, M Choe, CY Cho, JH Kim, W Park, S Lee, WK Hong, TW Kim, ...
Nanotechnology 21 (17), 175201, 2010
|Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors|
WK Hong, JI Sohn, DK Hwang, SS Kwon, G Jo, S Song, SM Kim, HJ Ko, ...
Nano Letters 8 (3), 950-956, 2008
|Electric Stress-Induced Threshold Voltage Instability of Multilayer MoS2 Field Effect Transistors|
K Cho, W Park, J Park, H Jeong, J Jang, TY Kim, WK Hong, S Hong, T Lee
ACS nano 7 (9), 7751-7758, 2013
|Electrical and Optical Characterization of MoS2 with Sulfur Vacancy Passivation by Treatment with Alkanethiol Molecules|
K Cho, M Min, TY Kim, H Jeong, J Pak, JK Kim, J Jang, SJ Yun, YH Lee, ...
ACS nano 9 (8), 8044-8053, 2015
|Efficient bulk-heterojunction photovoltaic cells with transparent multi-layer graphene electrodes|
M Choe, BH Lee, G Jo, J Park, W Park, S Lee, WK Hong, MJ Seong, ...
Organic Electronics 11 (11), 1864-1869, 2010
|Photoelectron Spectroscopic Imaging and Device Applications of Large-Area Patternable Single-Layer MoS2 Synthesized by Chemical Vapor Deposition|
W Park, J Baik, TY Kim, K Cho, WK Hong, HJ Shin, T Lee
ACS nano 8 (5), 4961-4968, 2014
|Passivation effects on ZnO nanowire field effect transistors under oxygen, ambient, and vacuum environments|
S Song, WK Hong, SS Kwon, T Lee
Applied Physics Letters 92 (26), 263109, 2008
|Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor|
JI Sohn, SS Choi, SM Morris, JS Bendall, HJ Coles, WK Hong, G Jo, T Lee, ...
Nano letters 10 (11), 4316-4320, 2010
|Piezoelectric effect on the electronic transport characteristics of ZnO nanowire field‐effect transistors on bent flexible substrates|
SS Kwon, WK Hong, G Jo, J Maeng, TW Kim, S Song, T Lee
Advanced Materials 20 (23), 4557-4562, 2008
|Irradiation Effects of High-Energy Proton Beams on MoS2 Field Effect Transistors|
TY Kim, K Cho, W Park, J Park, Y Song, S Hong, WK Hong, T Lee
ACS nano 8 (3), 2774-2781, 2014
|Thermodynamically stable synthesis of large‐scale and highly crystalline transition metal dichalcogenide monolayers and their unipolar n–n heterojunction devices|
J Lee, S Pak, P Giraud, YW Lee, Y Cho, J Hong, AR Jang, HS Chung, ...
Advanced Materials 29 (33), 1702206, 2017
|Fabrication of TiO2 nanotubes by using electrodeposited ZnO nanorod template and their application to hybrid solar cells|
SI Na, SS Kim, WK Hong, JW Park, J Jo, YC Nah, T Lee, DY Kim
Electrochimica Acta 53 (5), 2560-2566, 2008
|Enhancement of photodetection characteristics of MoS 2 field effect transistors using surface treatment with copper phthalocyanine|
J Pak, J Jang, K Cho, TY Kim, JK Kim, Y Song, WK Hong, M Min, H Lee, ...
Nanoscale 7 (44), 18780-18788, 2015
|Realization of highly reproducible ZnO nanowire field effect transistors with -channel depletion and enhancement modes|
WK Hong, DK Hwang, IK Park, G Jo, S Song, SJ Park, T Lee, BJ Kim, ...
Applied physics letters 90 (24), 243103, 2007
|Low frequency noise characterizations of ZnO nanowire field effect transistors|
W Wang, HD Xiong, MD Edelstein, D Gundlach, JS Suehle, CA Richter, ...
Journal of applied physics 101 (4), 044313, 2007
|Electrical properties of ZnO nanowire field effect transistors by surface passivation|
WK Hong, BJ Kim, TW Kim, G Jo, S Song, SS Kwon, A Yoon, EA Stach, ...
Colloids and Surfaces A: Physicochemical and Engineering Aspects 313, 378-382, 2008
|Robust and stretchable indium gallium zinc oxide-based electronic textiles formed by cilia-assisted transfer printing|
J Yoon, Y Jeong, H Kim, S Yoo, HS Jung, Y Kim, Y Hwang, Y Hyun, ...
Nature communications 7 (1), 1-10, 2016
|Radiation hardness of the electrical properties of carbon nanotube network field effect transistors under high-energy proton irradiation|
WK Hong, C Lee, D Nepal, KE Geckeler, K Shin, T Lee
Nanotechnology 17 (22), 5675, 2006
|Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation|
WK Hong, G Jo, JI Sohn, W Park, M Choe, G Wang, YH Kahng, ...
Acs Nano 4 (2), 811-818, 2010