| Structure and Photoluminescence Study of TiO2 Nanoneedle Texture along Vertically Aligned Carbon Nanofiber Arrays J Liu, J Li, A Sedhain, J Lin, H Jiang The Journal of Physical Chemistry C 112 (44), 17127-17132, 2008 | 162 | 2008 |
| Nature of deep center emissions in GaN A Sedhain, J Li, JY Lin, HX Jiang Applied Physics Letters 96 (15), 2010 | 110 | 2010 |
| Electrical and optical properties of p-type InGaN BN Pantha, A Sedhain, J Li, JY Lin, HX Jiang Applied Physics Letters 95, 261904, 2009 | 91 | 2009 |
| The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates A Sedhain, L Du, JH Edgar, JY Lin, HX Jiang Applied Physics Letters 95, 262104, 2009 | 79 | 2009 |
| Nature of optical transitions involving cation vacancies and complexes in AlN and AlGaN A Sedhain, JY Lin, HX Jiang Applied Physics Letters 100 (22), 2012 | 62 | 2012 |
| High mobility InN epilayers grown on AlN epilayer templates N Khan, A Sedhain, J Li, JY Lin, HX Jiang Applied Physics Letters 92, 172101, 2008 | 55 | 2008 |
| Ultraviolet photoluminescence from ferromagnetic Fe-doped AlN nanorods XH Ji, SP Lau, SF Yu, HY Yang, TS Herng, A Sedhain, JY Lin, HX Jiang, ... Applied physics letters 90, 193118, 2007 | 48 | 2007 |
| Mg acceptor level in InN epilayers probed by photoluminescence N Khan, N Nepal, A Sedhain, JY Lin, HX Jiang Applied physics letters 91, 012101, 2007 | 43 | 2007 |
| Si-doped high Al-content AlGaN epilayers with improved quality and conductivity using indium as a surfactant A Sedhain, JY Lin, HX Jiang Applied Physics Letters 92 (9), 2008 | 42 | 2008 |
| TM Al tahtamouni, JY Lin, HX Jiang, Z. Gu, and JH Edgar A Sedhain, N Nepal, ML Nakarmi Appl. Phys. Lett 93, 041905, 2008 | 36 | 2008 |
| Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers IW Feng, J Li, A Sedhain, JY Lin, HX Jiang, J Zavada Applied Physics Letters 96, 031908, 2010 | 30 | 2010 |
| Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers N Nepal, JM Zavada, R Dahal, C Ugolini, A Sedhain, JY Lin, HX Jiang Applied Physics Letters 95, 022510, 2009 | 29 | 2009 |
| Beryllium acceptor binding energy in AlN A Sedhain, TM Al Tahtamouni, J Li, JY Lin, HX Jiang Applied Physics Letters 93 (14), 2008 | 29 | 2008 |
| Probing exciton-phonon interaction in AlN epilayers by photoluminescence A Sedhain, J Li, JY Lin, HX Jiang Applied Physics Letters 95, 061106, 2009 | 28 | 2009 |
| Probing the relationship between structural and optical properties of Si-doped AlN BN Pantha, A Sedhain, J Li, JY Lin, HX Jiang Applied Physics Letters 96, 131906, 2010 | 23 | 2010 |
| Growth and photoluminescence studies of a-plane AlN∕ AlGaN quantum wells TM Al Tahtamouni, A Sedhain, JY Lin, HX Jiang Applied physics letters 90, 221105, 2007 | 23 | 2007 |
| Formation energy of optically active Er3+ centers in Er doped GaN C Ugolini, IW Feng, A Sedhain, JY Lin, HX Jiang, JM Zavada Applied Physics Letters 101 (5), 2012 | 19 | 2012 |
| Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys N Nepal, JM Zavada, DS Lee, AJ Steckl, A Sedhain, JY Lin, HX Jiang Applied Physics Letters 94, 111103, 2009 | 14 | 2009 |
| Valence band structure of AlN probed by photoluminescence A Sedhain, JY Lin, HX Jiang Applied Physics Letters 92, 041114, 2008 | 14 | 2008 |
| Photoluminescence properties of AlN homoepilayers with different orientations A Sedhain, N Nepal, ML Nakarmi, JY Lin, HX Jiang, Z Gu, JH Edgar Applied Physics Letters 93, 041905, 2008 | 11 | 2008 |
Andrew StecklProfessor of Electrical Engineering, University of CincinnatiBestätigte E-Mail-Adresse bei uc.edu
