| Twinning superlattices in indium phosphide nanowires RE Algra, MA Verheijen, MT Borgström, LF Feiner, G Immink, ... Nature 456 (7220), 369-372, 2008 | 634 | 2008 |
| Single quantum dot nanowire LEDs ED Minot, F Kelkensberg, M Van Kouwen, JA Van Dam, ... Nano letters 7 (2), 367-371, 2007 | 398 | 2007 |
| Bright single-photon sources in bottom-up tailored nanowires ME Reimer, G Bulgarini, N Akopian, M Hocevar, MB Bavinck, ... Nature communications 3 (1), 1-6, 2012 | 342 | 2012 |
| Quantized majorana conductance H Zhang, CX Liu, S Gazibegovic, D Xu, JA Logan, G Wang, N Van Loo, ... Nature 556 (7699), 74-79, 2018 | 312 | 2018 |
| Growth kinetics of heterostructured GaP− GaAs nanowires MA Verheijen, G Immink, T de Smet, MT Borgström, EPAM Bakkers Journal of the American Chemical Society 128 (4), 1353-1359, 2006 | 257 | 2006 |
| Difference between Blocking and Néel Temperatures in the Exchange Biased System PJ Van der Zaag, Y Ijiri, JA Borchers, LF Feiner, RM Wolf, JM Gaines, ... Physical Review Letters 84 (26), 6102, 2000 | 251 | 2000 |
| Direct band gap wurtzite gallium phosphide nanowires S Assali, I Zardo, S Plissard, D Kriegner, MA Verheijen, G Bauer, ... Nano letters 13 (4), 1559-1563, 2013 | 239 | 2013 |
| The structure of different phases of pure c-70 crystals MA Verheijen, H Meekes, GJM Meijer, P Bennema, JL Deboer, ... | 223 | 1992 |
| Epitaxial growth of InP nanowires on germanium EPAM Bakkers, JA Van Dam, S De Franceschi, LP Kouwenhoven, ... Nature materials 3 (11), 769-773, 2004 | 215 | 2004 |
| Synthesis of InP nanotubes EPAM Bakkers, MA Verheijen Journal of the American Chemical Society 125 (12), 3440-3441, 2003 | 164 | 2003 |
| Critical review of the current status of thickness measurements for ultrathin SiO2 on Si Part V: Results of a CCQM pilot study MP Seah, SJ Spencer, F Bensebaa, I Vickridge, H Danzebrink, M Krumrey, ... Surface and Interface Analysis: An International Journal devoted to the …, 2004 | 157 | 2004 |
| Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy RL Puurunen, W Vandervorst, WFA Besling, O Richard, H Bender, ... Journal of applied physics 96 (9), 4878-4889, 2004 | 151 | 2004 |
| Position-controlled epitaxial III–V nanowires on silicon AL Roest, MA Verheijen, O Wunnicke, S Serafin, H Wondergem, ... Nanotechnology 17 (11), S271, 2006 | 149 | 2006 |
| Efficiency enhancement of InP nanowire solar cells by surface cleaning Y Cui, J Wang, SR Plissard, A Cavalli, TTT Vu, RPJ Van Veldhoven, ... Nano letters 13 (9), 4113-4117, 2013 | 146 | 2013 |
| Ultrahigh capacitance density for multiple ALD-grown MIM capacitor stacks in 3-D silicon JH Klootwijk, KB Jinesh, W Dekkers, JF Verhoeven, FC Van Den Heuvel, ... IEEE Electron Device Letters 29 (7), 740-742, 2008 | 146 | 2008 |
| Epitaxy of advanced nanowire quantum devices S Gazibegovic, D Car, H Zhang, SC Balk, JA Logan, MWA de Moor, ... Nature 548 (7668), 434-438, 2017 | 138 | 2017 |
| Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition G Dingemans, NM Terlinden, MA Verheijen, MCM Van de Sanden, ... Journal of Applied Physics 110 (9), 093715, 2011 | 137 | 2011 |
| Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition G Dingemans, NM Terlinden, MA Verheijen, MCM Van de Sanden, ... Journal of Applied Physics 110 (9), 093715, 2011 | 136 | 2011 |
| Epitaxial growth of III-V nanowires on group IV substrates EPAM Bakkers, MT Borgström, MA Verheijen Mrs Bulletin 32 (2), 117-122, 2007 | 136 | 2007 |
| Supported core/shell bimetallic nanoparticles synthesis by atomic layer deposition MJ Weber, AJM Mackus, MA Verheijen, C van der Marel, WMM Kessels Chemistry of Materials 24 (15), 2973-2977, 2012 | 130 | 2012 |
Erik BakkersVerified email at tue.nl
